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公开(公告)号：US20180330983A1
公开(公告)日：2018-11-15
申请号：US15775924
申请日：2016-11-15
发明人： Gang Wang , Charles R. Lottes , Sasha Kweskin
IPC分类号： H01L21/762 , H01L21/02 , H01L27/146
摘要： A method is provided for preparing semiconductor structure, e.g., a semiconductor on insulator structure, comprising a device layer having a smooth surface. The method provided involves smoothing a semiconductor substrate surface by making use of stress enhanced surface diffusion at elevated temperatures. The purpose of this method is to reach atomic scale surface smoothness (for example, smoothness in the range of between 1.0 and 1.5 angstroms as measured according to root mean square over a 30 um×30 um AFM measurement), which is required in advanced (sub 28 nm) CMOS device fabrication.
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公开(公告)号：US10529616B2
公开(公告)日：2020-01-07
申请号：US15775924
申请日：2016-11-15
发明人： Gang Wang , Charles R. Lottes , Sasha Kweskin
IPC分类号： H01L21/76 , H01L21/762 , H01L21/02 , H01L27/146
摘要： A method is provided for preparing semiconductor structure, e.g., a semiconductor on insulator structure, comprising a device layer having a smooth surface. The method provided involves smoothing a semiconductor substrate surface by making use of stress enhanced surface diffusion at elevated temperatures. The purpose of this method is to reach atomic scale surface smoothness (for example, smoothness in the range of between 1.0 and 1.5 angstroms as measured according to root mean square over a 30 um×30 um AFM measurement), which is required in advanced (sub 28 nm) CMOS device fabrication.
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公开(公告)号：US5891250A
公开(公告)日：1999-04-06
申请号：US72564
申请日：1998-05-05
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C23C16/455 , C30B25/14
摘要： A reactor for depositing an epitaxial layer on a semiconductor wafer contained within the reactor during a chemical vapor deposition process. The reactor comprises a reaction chamber sized and shaped for receiving a semiconductor wafer and an inlet passage in communication with the reaction chamber for delivering reactant gas to the reaction chamber. In addition the reactor includes a susceptor positioned in the reaction chamber for supporting the semiconductor wafer during the chemical vapor deposition process. Further, the reactor comprises an injector including a metering plate generally blocking reactant gas flow through the inlet passage. The plate has a slot extending through the plate totally within a periphery of the plate. The slot is sized for selectively restricting reactant gas flow past the plate thereby to meter reactant gas delivery to the chamber.
摘要翻译： 一种用于在化学气相沉积工艺期间在反应器内包含的半导体晶片上沉积外延层的反应器。 反应器包括反应室，其尺寸和形状用于接收半导体晶片和与反应室连通的入口通道，用于将反应气体输送到反应室。 此外，反应器包括位于反应室中的基座，用于在化学气相沉积工艺期间支撑半导体晶片。 此外，反应器包括喷射器，该喷射器包括通常阻挡通过入口通道的反应气流的计量盘。 该板具有在板的周边内完全延伸穿过该板的槽。 槽的尺寸用于选择性地限制反应物气体流过板，从而计量反应物气体输送到室。
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公开(公告)号：US5990014A
公开(公告)日：1999-11-23
申请号：US3986
申请日：1998-01-07
IPC分类号： H01L21/304 , H01L21/00 , H01L21/306
CPC分类号： H01L21/02046 , H01L21/67069 , Y10S438/906 , Y10S438/974
摘要： A low pressure in situ wafer cleaning process and apparatus are disclosed wherein a low pressure external combustion reactor 2 in combination with a low pressure furnace 14 produces a stream of a combustion product through the combustion of a halogenated hydrocarbon and oxygen. The combustion product is contacted with semiconductor wafers in the low pressure furnace to remove Group I and II metals. After a sufficient time has passed for cleaning, the combustion reactor and furnace are purged with an inert gas to remove the combustion product. In a preferred embodiment, the halogenated hydrocarbon is trans-1,2-dichloroethylene and the combustion product is vaporous hydrochloric acid.
摘要翻译： 公开了低压原位晶片清洗方法和装置，其中低压外燃反应器2与低压炉14组合通过卤代烃和氧的燃烧产生燃烧产物流。 燃烧产物与低压炉中的半导体晶片接触以去除第I族和第II族金属。 在经过足够的时间清洁之后，用惰性气体吹扫燃烧反应器和炉子以除去燃烧产物。 在优选的实施方案中，卤代烃为反式1,2-二氯乙烯，燃烧产物为蒸气性盐酸。
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