Data multiplexer architecture for realizing dot inversion mode for use in a liquid crystal display device and associated driving method
    1.
    发明授权
    Data multiplexer architecture for realizing dot inversion mode for use in a liquid crystal display device and associated driving method 有权
    用于实现液晶显示装置中使用的点反转模式的数据多路复用器结构及相关的驱动方法

    公开(公告)号:US08164563B2

    公开(公告)日:2012-04-24

    申请号:US12136261

    申请日:2008-06-10

    IPC分类号: G09G5/10 G09G3/36

    摘要: A liquid crystal display device includes a gate driver for generating a first scan signal voltage and a second scan signal voltage, a source driver for generating a first polarity data voltage and a second polarity data voltage, and a liquid crystal display panel having a first pixel set and a second pixel set. Each first and second pixel set includes a first pixel and a second pixel. Both the first pixel of the first pixel set and the second pixel of the second pixel set display grey level based on the first polarity data voltage in response to the first scan signal voltage. Both the second pixel of the first pixel set and the first pixel of the second pixel set display grey level based on the second polarity data voltage in response to the second scan signal voltage.

    摘要翻译: 液晶显示装置包括用于产生第一扫描信号电压和第二扫描信号电压的栅极驱动器,用于产生第一极性数据电压和第二极性数据电压的源极驱动器,以及具有第一像素的液晶显示面板 设置和第二个像素集。 每个第一和第二像素组包括第一像素和第二像素。 第一像素组的第一像素和第二像素组的第二像素都响应于第一扫描信号电压而基于第一极性数据电压显示灰度级。 响应于第二扫描信号电压,第一像素组的第二像素和第二像素组的第一像素都基于第二极性数据电压显示灰度级。

    Touch Detection Method
    2.
    发明申请
    Touch Detection Method 审中-公开
    触摸检测方法

    公开(公告)号:US20110169747A1

    公开(公告)日:2011-07-14

    申请号:US12684915

    申请日:2010-01-09

    IPC分类号: G06F3/041

    摘要: A touch detection method is adapted for a display apparatus. The display apparatus comprises a first gate line, a sensor pad and a second gate line adjacent to the first gate line. The sensor pad is electrically coupled to the first gate line. The touch detection method comprises steps of: enabling the first gate line; and detecting whether the sensor pad is touched before enabling the second gate line. Therein, a partial overlapped time exists between a subsequent enable period for enabling the second gate line and an enable period for enabling the first gate line.

    摘要翻译: 触摸检测方法适用于显示装置。 显示装置包括第一栅极线,传感器焊盘和与第一栅极线相邻的第二栅极线。 传感器焊盘电耦合到第一栅极线。 触摸检测方法包括以下步骤:启用第一栅极线; 以及在启用第二栅极线之前检测传感器焊盘是否被触摸。 其中,在用于启用第二栅极线的后续使能周期和用于启用第一栅极线的使能周期之间存在部分重叠时间。

    Method of manufacturing an AMOLED
    3.
    发明授权
    Method of manufacturing an AMOLED 有权
    制造AMOLED的方法

    公开(公告)号:US07459351B2

    公开(公告)日:2008-12-02

    申请号:US11161786

    申请日:2005-08-16

    申请人: Chen-Ming Chen

    发明人: Chen-Ming Chen

    摘要: The present invention relates to a method of manufacturing an AMOLED panel. The method comprises providing a substrate, forming a data line and a drain metal on the substrate, forming a buffer insulator layer, forming an active layer, forming a gate insulator layer, forming a gate metal, performing an ion doping to form a source and a drain, forming a via hole, forming a transparent electrode and a pixel define layer, and forming a LED on the transparent electrode.

    摘要翻译: 本发明涉及一种制造AMOLED面板的方法。 该方法包括提供衬底,在衬底上形成数据线和漏极金属,形成缓冲绝缘体层,形成有源层,形成栅极绝缘体层,形成栅极金属,进行离子掺杂以形成源极;以及 漏极,形成通孔,形成透明电极和像素限定层,以及在透明电极上形成LED。

    METHOD OF MANUFACTURING AN AMOLED
    4.
    发明申请
    METHOD OF MANUFACTURING AN AMOLED 有权
    制造方法

    公开(公告)号:US20070042518A1

    公开(公告)日:2007-02-22

    申请号:US11161786

    申请日:2005-08-16

    申请人: Chen-Ming Chen

    发明人: Chen-Ming Chen

    IPC分类号: H01L21/36

    摘要: The present invention relates to a method of manufacturing an AMOLED panel. The method comprises providing a substrate, forming a data line and a drain metal on the substrate, forming a buffer insulator layer, forming an active layer, forming a gate insulator layer, forming a gate metal, performing an ion doping to form a source and a drain, forming a via hole, forming a transparent electrode and a pixel define layer, and forming a LED on the transparent electrode.

    摘要翻译: 本发明涉及一种制造AMOLED面板的方法。 该方法包括提供衬底,在衬底上形成数据线和漏极金属,形成缓冲绝缘体层,形成有源层,形成栅极绝缘体层,形成栅极金属,进行离子掺杂以形成源极;以及 漏极,形成通孔,形成透明电极和像素限定层,以及在透明电极上形成LED。

    Method and device for reducing voltage stress at bootstrap point in electronic circuits
    7.
    发明申请
    Method and device for reducing voltage stress at bootstrap point in electronic circuits 有权
    用于降低电子电路自举点电压应力的方法和装置

    公开(公告)号:US20090051639A1

    公开(公告)日:2009-02-26

    申请号:US11894752

    申请日:2007-08-20

    IPC分类号: G09G3/36 G11C19/00

    摘要: A discharging device is used to reduce the voltage level at a bootstrap point in an electronic circuit such as a shift register circuit. In such a circuit, a first transistor in a conducting state receives an input pulse and conveys it to the gate terminal of a second transistor, causing the second transistor to be in a conducting state. This gate terminal is known as a bootstrap point. After receiving the input pulse, an output pulse is produced at one drain/source terminal of the second transistor. During the time period of the output pulse, the first transistor is in a non-conducting state and the voltage level at the bootstrap point is high, imposing a stress upon the first transistor. A discharging circuit consisting of at least one transistor is coupled to the bootstrap point in order to reduce the voltage level at the output pulse period.

    摘要翻译: 放电装置用于降低诸如移位寄存器电路的电子电路中的自举点处的电压电平。 在这种电路中,导通状态的第一晶体管接收输入脉冲并将其传送到第二晶体管的栅极端子,使第二晶体管处于导通状态。 该门终端被称为引导点。 在接收到输入脉冲之后,在第二晶体管的一个漏极/源极端产生输出脉冲。 在输出脉冲的时间周期期间,第一晶体管处于非导通状态,并且自举点处的电压电平高,对第一晶体管施加应力。 由至少一个晶体管组成的放电电路耦合到自举点,以便降低输出脉冲周期的电压电平。

    Method of manufacturing an AMOLED
    8.
    发明授权
    Method of manufacturing an AMOLED 有权
    制造AMOLED的方法

    公开(公告)号:US07381596B2

    公开(公告)日:2008-06-03

    申请号:US11162832

    申请日:2005-09-26

    申请人: Chen-Ming Chen

    发明人: Chen-Ming Chen

    IPC分类号: H01L21/00

    CPC分类号: H01L27/124 H01L27/1248

    摘要: The present invention relating to a method of manufacturing an AMOLED panel. The method comprises providing a substrate, forming a TFT on the substrate, forming an inter-layer insulator layer, forming a plurality of via holes, forming a metal layer which electrically contacts a source and a drain, forming a transparent electrode, a pixel define layer and a LED. Because the present invention omits a passivation layer, the cost decreases and the process is simpler.

    摘要翻译: 本发明涉及一种制造AMOLED面板的方法。 该方法包括提供衬底,在衬底上形成TFT,形成层间绝缘体层,形成多个通孔,形成与源极和漏极电接触的金属层,形成透明电极,像素限定 层和LED。 因为本发明省略了钝化层,所以成本降低,并且处理更简单。

    THIN FILM TRANSISTOR ARRAY, ELECTROSTATIC DISCHARGE PROTECTIVE DEVICE THEREOF, AND METHODS FOR FABRICATING THE SAME
    9.
    发明申请
    THIN FILM TRANSISTOR ARRAY, ELECTROSTATIC DISCHARGE PROTECTIVE DEVICE THEREOF, AND METHODS FOR FABRICATING THE SAME 有权
    薄膜晶体管阵列,其静电放电保护器件及其制造方法

    公开(公告)号:US20070090410A1

    公开(公告)日:2007-04-26

    申请号:US11162327

    申请日:2005-09-07

    申请人: Chen-Ming Chen

    发明人: Chen-Ming Chen

    IPC分类号: H01L27/148

    摘要: A thin film transistor array, an electrostatic discharge protective device thereof, and methods for fabricating the same are provided. The thin film transistor array comprises a plurality of scan lines, a plurality of data lines, a first shorting bar, and a second shorting bar. The electrostatic discharge protective device comprises a switching device and a resistance line in parallel. If static electricity accumulated on the TFT array is over a predetermined range, the accumulated static electricity will be conducted to the first or second shorting bar via the switching device. The resistance line can prevent signals applied to one of the scan lines or data lines from being conducted to other scan lines or data lines, to detect a defective pixel.

    摘要翻译: 提供薄膜晶体管阵列,其静电放电保护装置及其制造方法。 薄膜晶体管阵列包括多条扫描线,多条数据线,第一短路条和第二短路条。 静电放电保护装置包括并联的开关装置和电阻线。 如果在TFT阵列上积聚的静电超过预定范围,则累积的静电将通过开关装置传导到第一或第二短路棒。 电阻线可以防止施加到其中一条扫描线或数据线的信号被传导到其他扫描线或数据线,以检测缺陷像素。

    Thin film transistor and fabrication method for same
    10.
    发明授权
    Thin film transistor and fabrication method for same 有权
    薄膜晶体管及其制造方法相同

    公开(公告)号:US06995050B2

    公开(公告)日:2006-02-07

    申请号:US10975470

    申请日:2004-10-29

    IPC分类号: H01L21/00

    摘要: A thin film transistor and a method for fabricating the same. The thin film transistor comprises a substrate and a patterned semiconductive layer formed on the substrate, wherein the semiconductive layer comprises a channel region and doped regions adjacent to the channel region. A gate insulating layer is formed on the above structure. A gate electrode is located on the gate insulating layer above the channel region. Source and drain electrodes are located on the gate insulating layer adjacent to the semiconductive layer. A dielectric layer having contact holes is formed on the above structure and a patterned conductive layer is formed on predetermined parts of the dielectric layer electrically connecting the doped regions to the source and drain electrode through the contact holes.

    摘要翻译: 一种薄膜晶体管及其制造方法。 薄膜晶体管包括衬底和形成在衬底上的图案化半导体层,其中半导体层包括沟道区和与沟道区相邻的掺杂区。 在上述结构上形成栅极绝缘层。 栅极电极位于沟道区域上方的栅极绝缘层上。 源极和漏极位于与半导体层相邻的栅极绝缘层上。 在上述结构上形成具有接触孔的电介质层,并且在介电层的预定部分上形成图案化导电层,该电介质层通过接触孔将掺杂区域电连接到源电极和漏电极。