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8 条记录 (耗时 0.016 秒)

    Solution-based synthesis of CsSnI3 thin films
    2.
    发明授权
    Solution-based synthesis of CsSnI3 thin films 有权
    CsSnI3薄膜的基于溶液的合成

    公开(公告)号：US08840809B2

    公开(公告)日：2014-09-23

    申请号：US13491564

    申请日：2012-06-07

    申请人： Kai Shum ,  Zhuo Chen ,  Yuhang Ren

    发明人： Kai Shum ,  Zhuo Chen ,  Yuhang Ren

    IPC分类号： C09K11/02 ,  C09K11/08 ,  C09K11/77 ,  H01L31/18 ,  H01L31/032 ,  H01L21/02 ,  H01L33/00 ,  H01L33/26

    CPC分类号： H01L31/18 ,  H01L21/02521 ,  H01L21/02628 ,  H01L31/032 ,  H01L33/005 ,  H01L33/26

    摘要： This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based spray-coating synthesis of cesium tin tri-iodide (CsSnI3) thin films. This invention is also directed to effective and inexpensive methods to synthesize the thin CsSnI3 films on large-area substrates such as glass, ceramics, glass, ceramic, silicon, and metal foils. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

    摘要翻译： 本发明公开了三碘化铯锡（CsSnI3）薄膜的基于溶液的合成。 更具体地，本发明涉及三碘化铯锡（CsSnI 3）薄膜的基于溶液的喷涂合成。 本发明还涉及在诸如玻璃，陶瓷，玻璃，陶瓷，硅和金属箔的大面积基板上合成薄的CsSnI 3薄膜的有效且廉价的方法。 CsSnI3膜非常适用于各种应用，如发光和光伏器件。

    SOLUTION-BASED SYNTHESIS OF CsSnI3 THIN FILMS
    4.
    发明申请
    SOLUTION-BASED SYNTHESIS OF CsSnI3 THIN FILMS 有权
    CsSnI3薄膜的基于溶液的合成

    公开(公告)号：US20130139872A1

    公开(公告)日：2013-06-06

    申请号：US13491564

    申请日：2012-06-07

    申请人： Kai Shum ,  Zhuo Chen ,  Yuhang Ren

    发明人： Kai Shum ,  Zhuo Chen ,  Yuhang Ren

    IPC分类号： H01L31/18 ,  H01L31/032

    CPC分类号： H01L31/18 ,  H01L21/02521 ,  H01L21/02628 ,  H01L31/032 ,  H01L33/005 ,  H01L33/26

    摘要： This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based spray-coating synthesis of cesium tin tri-iodide (CsSnI3) thin films. This invention is also directed to effective and inexpensive methods to synthesize the thin CsSnI3 films on large-area substrates such as glass, ceramics, glass, ceramic, silicon, and metal foils. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

    摘要翻译： 本发明公开了三碘化铯锡（CsSnI3）薄膜的基于溶液的合成。 更具体地，本发明涉及三碘化铯锡（CsSnI 3）薄膜的基于溶液的喷涂合成。 本发明还涉及在诸如玻璃，陶瓷，玻璃，陶瓷，硅和金属箔的大面积基板上合成薄的CsSnI 3薄膜的有效且廉价的方法。 CsSnI3膜非常适用于各种应用，如发光和光伏器件。

    PEROVSKITE SEMICONDUCTOR THIN FILM AND METHOD OF MAKING THEREOF
    5.
    发明申请
    PEROVSKITE SEMICONDUCTOR THIN FILM AND METHOD OF MAKING THEREOF 失效

    公开(公告)号：US20120305918A1

    公开(公告)日：2012-12-06

    申请号：US13151243

    申请日：2011-06-01

    申请人： Kai Shum

    发明人： Kai Shum

    IPC分类号： H01L29/04 ,  H01L21/20

    CPC分类号： H01L21/02422 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02631 ,  H01L33/26

    摘要： Perovskite semiconductor thin films and the method of making Perovskite semiconductor thin films are disclosed. Perovskite semiconductor thin films were deposited on inexpensive substrates such as glass and ceramics. CsSnI3 films contained polycrystalline domains with typical size of 300 nm and larger. It is confirmed experimentally that CsSnI3 compound in its black phase is a direct band-gap semiconductor, consistent with the calculated band structure from the first principles.

    摘要翻译： 公开了钙钛矿半导体薄膜和制造钙钛矿半导体薄膜的方法。 钙钛矿半导体薄膜沉积在诸如玻璃和陶瓷的廉价基板上。 CsSnI3膜含有典型尺寸为300nm以上的多晶畴。 实验证实，其黑相中的CsSnI 3化合物是直接带隙半导体，与第一原理的计算的带结构一致。

    One-pot synthesis of chalcopyrite-based semi-conductor nanoparticles
    7.
    发明授权
    One-pot synthesis of chalcopyrite-based semi-conductor nanoparticles 有权
    一锅合金黄铜矿半导体纳米粒子

    公开(公告)号：US08231848B1

    公开(公告)日：2012-07-31

    申请号：US13443114

    申请日：2012-04-10

    申请人： Yuhang Ren ,  Chivin Sun ,  Kai Shum

    发明人： Yuhang Ren ,  Chivin Sun ,  Kai Shum

    IPC分类号： B82Y40/00 ,  C01B17/00 ,  C01B19/00 ,  H01L21/02

    CPC分类号： C01B19/002 ,  B82Y30/00 ,  B82Y40/00 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/84 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/60 ,  C01P2004/64 ,  H01L29/0665 ,  Y10S977/773 ,  Y10S977/827

    摘要： Ternary and quaternary Chalcopyrite CuInxGa1-xSySe2-y (CIGS, where 0≦x and y≦1) nanoparticles were synthesized from molecular single source precursors (SSPs) by a one-pot reaction in a high boiling solvent using salt(s) (i.e. NaCl as by-product) as heat transfer agent via conventional convective heating method. The nanoparticles sizes were 1.8 nm to 5.2 nm as reaction temperatures were varied from 150° C. to 190° C. with very high-yield. Tunable nanoparticle size is achieved through manipulation of reaction temperature, reaction time, and precursor concentrations. In addition, the method developed in this study was scalable to achieve ultra-large quantities production of tetragonal and quaternary Chalcopyrite CIGS nanoparticles.

    摘要翻译： 三元和四元黄铜矿CuInxGa1-xSySe2-y（CIGS，其中0和nlE; x和y＆nlE; 1）纳米颗粒由分子单源前体（SSPs）通过一锅反应在高沸点溶剂中使用盐（即 NaCl作为副产物）作为传热剂通过常规对流加热方法。 随着反应温度以非常高的产率从150℃变化到190℃，纳米颗粒尺寸为1.8nm至5.2nm。 可调谐的纳米颗粒尺寸通过操作反应温度，反应时间和前体浓度来实现。 此外，本研究开发的方法具有可扩展性，可实现四价和四级黄铜矿CIGS纳米粒子的超大批量生产。

    Perovskite semiconductor thin film and method of making thereof
    8.
    发明授权
    Perovskite semiconductor thin film and method of making thereof 失效
    钙钛矿半导体薄膜及其制造方法

    公开(公告)号：US08529797B2

    公开(公告)日：2013-09-10

    申请号：US13151243

    申请日：2011-06-01

    申请人： Kai Shum

    发明人： Kai Shum

    IPC分类号： C09B67/00

    CPC分类号： H01L21/02422 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02631 ,  H01L33/26

    摘要： Perovskite semiconductor thin films and the method of making Perovskite semiconductor thin films are disclosed. Perovskite semiconductor thin films were deposited on inexpensive substrates such as glass and ceramics. CsSnI3 films contained polycrystalline domains with typical size of 300 nm and larger. It is confirmed experimentally that CsSnI3 compound in its black phase is a direct band-gap semiconductor, consistent with the calculated band structure from the first principles.

    摘要翻译： 公开了钙钛矿半导体薄膜和制造钙钛矿半导体薄膜的方法。 钙钛矿半导体薄膜沉积在诸如玻璃和陶瓷的廉价基板上。 CsSnI3膜含有典型尺寸为300nm以上的多晶畴。 实验证实，其黑相中的CsSnI 3化合物是直接带隙半导体，与第一原理的计算的带结构一致。