-
公开(公告)号：US10566485B2
公开(公告)日：2020-02-18
申请号：US13555725
申请日：2012-07-23
IPC分类号： H01L31/00 , H01L31/0687 , H01L31/18 , H01L31/0735
摘要： A solar cell includes a first layer having a first-layer lattice parameter, a second layer having a second-layer lattice parameter different from the first-layer lattice parameter, wherein the second layer includes a photoactive second-layer material; and a third layer having a third-layer lattice parameter different from the second-layer lattice parameter, wherein the third layer includes a photoactive third-layer material. A transparent buffer layer extends between and contacts the second layer and the third layer and has a buffer-layer lattice parameter that varies with increasing distance from the second layer toward the third layer, so as to lattice match to the second layer and to the third layer. There may be additional subcell layers and buffer layers in the solar cell.
-
公开(公告)号：US08227689B2
公开(公告)日：2012-07-24
申请号：US10868080
申请日：2004-06-15
IPC分类号： H01L31/00
CPC分类号： H01L31/0687 , H01L31/0735 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a first layer having a first-layer lattice parameter, a second layer having a second-layer lattice parameter different from the first-layer lattice parameter, wherein the second layer includes a photoactive second-layer material; and a third layer having a third-layer lattice parameter different from the second-layer lattice parameter, wherein the third layer includes a photoactive third-layer material. A transparent buffer layer extends between and contacts the second layer and the third layer and has a buffer-layer lattice parameter that varies with increasing distance from the second layer toward the third layer, so as to lattice match to the second layer and to the third layer. There may be additional subcell layers and buffer layers in the solar cell.
摘要翻译： 太阳能电池包括具有第一层晶格参数的第一层，具有不同于第一层晶格参数的第二层晶格参数的第二层，其中第二层包括光活性第二层材料; 以及具有不同于所述第二层晶格参数的第三层晶格参数的第三层，其中所述第三层包括光活性第三层材料。 透明缓冲层在第二层和第三层之间延伸并接触第二层和第三层，并且具有随着从第二层朝向第三层的距离的增加而变化的缓冲层晶格参数，以便与第二层和第三层的晶格匹配 层。 在太阳能电池中可能存在附加的子电池层和缓冲层。
-
3.发明授权Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer 有权具有晶格失配的GrIII-GrV-X层和组成梯度缓冲层的多结太阳能电池公开(公告)号：US07807921B2
公开(公告)日：2010-10-05
申请号：US10868079
申请日：2004-06-15
IPC分类号： H01L31/00
CPC分类号： H01L31/0687 , H01L31/1852 , Y02E10/544
摘要： A multijunction solar cell includes a first photoactive subcell layer having a first-subcell lattice parameter and a composition including (a) at least one Group III element, at least one Group V element other than (nitrogen, phosphorus), and (nitrogen, phosphorus), or (b) a material selected from the group including GaInAsBi, GaInAsSb, GaInAsP, ZnGeAs2, or BGaInAs. The multijunction solar cell also has a substrate having a substrate lattice parameter different from the first-subcell lattice parameter, and a composition-graded buffer layer between the first photoactive subcell layer and the substrate and having a buffer-layer lattice parameter graded between the first-subcell lattice parameter and the substrate lattice parameter. The substrate may be a second photoactive subcell layer having a second-subcell lattice parameter different from the first-subcell lattice parameter and sensitive to a second-photoactive-subcell-layer wavelength, and the buffer layer is transparent to the second-photoactive-subcell-layer wavelength.
摘要翻译： 多结太阳能电池包括具有第一子电池晶格参数的第一光活性子电池层和包含（a）至少一种III族元素，除（氮，磷）以外的至少一种V族元素和（氮，磷） ）或（b）选自包括GaInAsBi，GaInAsSb，GaInAsP，ZnGeAs2或BGaInAs的材料的材料。 所述多结太阳能电池还具有基板，其具有不同于所述第一子电池晶格参数的基板晶格参数，以及在所述第一光活性子电池层和所述基板之间的组成梯度缓冲层，并且具有在所述第一子电池晶格参数之间分级的缓冲层晶格参数 子单元晶格参数和衬底晶格参数。 衬底可以是具有与第一子电池晶格参数不同的第二子电池晶格参数并且对第二光活性 - 子电池层波长敏感的第二光活性子电池层，并且缓冲层对第二光活性子电池是透明的 层波长。
-
4.发明授权Isoelectronic surfactant induced sublattice disordering in optoelectronic devices 有权等电子表面活性剂诱导光电器件中的亚晶格紊乱公开(公告)号：US08846134B2
公开(公告)日：2014-09-30
申请号：US11517156
申请日：2006-09-07
CPC分类号： C30B25/186 , C30B29/40 , H01L21/02381 , H01L21/0245 , H01L21/02458 , H01L21/02463 , H01L21/02502 , H01L21/02521 , H01L21/02543 , H01L21/02658 , H01L31/0687 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.
摘要翻译： 一种使光电子器件层失调的方法，包括： 生长多个下层; 引入等电子表面活性剂; 生长一层; 使表面活性剂解吸; 并且生长的后续层都在25托的低压下进行。
-
5.发明申请ISOELECTRONIC SURFACTANT SUPPRESSION OF THREADING DISLOCATIONS IN METAMORPHIC EPITAXIAL LAYERS 有权ISOELECTRONICS表面活性剂抑制元素外延层中的螺纹位错公开(公告)号：US20090145476A1
公开(公告)日：2009-06-11
申请号：US11361976
申请日：2006-02-23
CPC分类号： H01L31/184 , H01L21/02381 , H01L21/02439 , H01L21/0245 , H01L21/02463 , H01L21/02505 , H01L21/02543 , Y02E10/544
摘要： A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III-V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.
摘要翻译： 将穿透位错的传播减少到具有III-V材料体系的光电器件的有源区域的方法包括在等电子表面活性剂的存在下生长变质缓冲区域。 第一缓冲层可以与相邻衬底晶格匹配，并且第二缓冲层可以与设置在第二缓冲层上的器件层晶格匹配。 此外，以这种方式制造的多个变质缓冲层可以用于单个给定的装置中，允许多个层具有独立选自装置的其余部分的带隙和晶格常数。
-
公开(公告)号：US07812249B2
公开(公告)日：2010-10-12
申请号：US10413906
申请日：2003-04-14
申请人： Richard R. King , James H. Ermer , Peter C. Colter , Chris Fetzer
发明人： Richard R. King , James H. Ermer , Peter C. Colter , Chris Fetzer
IPC分类号： H01L31/00
CPC分类号： H01L31/1844 , H01L31/036 , H01L31/0687 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： The present invention provides a photovoltaic cell comprising a GaInP subcell comprising a disordered group-III sublattice, a Ga(In)As subcell disposed below the GaInP subcell, and a Ge substrate disposed below the Ga(In)As subcell comprising a surface misoriented from a (100) plane by an angle from about 8 degrees to about 40 degrees toward a nearest (111) plane.
摘要翻译： 本发明提供一种包括GaInP子电池的光伏电池，该GaInP子电池包括无序III族子晶格，设置在GaInP子电池下方的Ga（In）As子电池，以及设置在Ga（In）As子电池下方的Ge衬底， （100）平面朝向最近（111）面约8度至约40度的角度。
-
公开(公告)号：US10069026B2
公开(公告)日：2018-09-04
申请号：US11305967
申请日：2005-12-19
IPC分类号： H01L31/00 , H01L31/0725 , H01L31/0352 , H01L31/0735 , H01L31/075 , H01L31/078 , B82Y20/00
摘要： Methods and apparatuses for a dual heterojunction multijunction solar cell are disclosed. A method in accordance with the present invention comprises growing a base material for a solar cell, growing at least one dual heterojunction on the base material, and growing an emitter on the at least one dual heterojunction. An apparatus in accordance with the present invention comprises a substrate, and a first subcell, coupled to the substrate, wherein the first subcell comprises a base region, coupled to the substrate, an emitter region, and at least one dual heterojunction, coupled between the base region and the emitter region, wherein the at least one dual heterojunction has a lower bandgap than the emitter region.
-
公开(公告)号：US09985160B2
公开(公告)日：2018-05-29
申请号：US13619625
申请日：2012-09-14
IPC分类号： H01L31/0725 , H01L31/074 , H01L31/078 , H01L31/0745 , H01L31/0687
CPC分类号： H01L31/0725 , H01L31/0687 , H01L31/074 , H01L31/0745 , H01L31/078 , Y02E10/544
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
-
9.发明申请公开(公告)号：US20140076387A1
公开(公告)日：2014-03-20
申请号：US13617316
申请日：2012-09-14
IPC分类号： H01L31/0264 , H01L31/06
CPC分类号： H01L31/0725 , H01L31/0687 , H01L31/074 , H01L31/0745 , H01L31/078 , Y02E10/544
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
摘要翻译： 公开了用于可以是单结或多结太阳能电池的光伏电池的装置结构，装置和方法，其中至少第一层包括IV族半导体，其中部分电池包括第三层，其包含III-V 具有与第一层的IV族半导体不同的组成的半导体或IV族半导体，使得在第一层和第二层之间形成异质结构。
-
公开(公告)号：US20120031478A1
公开(公告)日：2012-02-09
申请号：US12852574
申请日：2010-08-09
IPC分类号： H01L31/109
CPC分类号： H01L31/0735 , H01L31/072 , H01L31/0725 , Y02E10/544
摘要： A solar cell including a base semiconductor layer having a first bandgap, an emitter semiconductor layer having a second bandgap and a depletion semiconductor layer positioned between the base semiconductor layer and the emitter semiconductor layer, the depletion semiconductor layer having a third bandgap, wherein the third bandgap is greater than the first bandgap and the second bandgap.
摘要翻译： 一种太阳能电池，包括具有第一带隙的基底半导体层，具有第二带隙的发射极半导体层和位于所述基底半导体层和所述发射极半导体层之间的耗尽半导体层，所述耗尽半导体层具有第三带隙，其中所述第三带隙 带隙大于第一带隙和第二带隙。
-
-
-
-
-
-
-
-
-
搜索结果
42 条记录 (耗时 0.029 秒)
