Electrical devices formed using ternary semiconducting compounds
    2.
    发明授权
    Electrical devices formed using ternary semiconducting compounds 失效
    使用三元半导体化合物形成的电器件

    公开(公告)号:US08654807B2

    公开(公告)日:2014-02-18

    申请号:US13299326

    申请日:2011-11-17

    IPC分类号: H01S5/00 H01L25/00

    摘要: An electrical device includes a charge carrier transport layer formed using a ternary semiconducting compound having a stoichiometry of 1:1:1 and an element combination selected from the set of I-II-V, I-III-IV, II-II-IV, and I-I-VI; or having a stoichiometry of 3:1:2 and an element combination selected from the set of I-III-V; or having a stoichiometry of 2:1:1 and an element combination selected from the set of I-II-IV. In some embodiments, the charge carrier transport layer is used as the radiation absorption layer for a photovoltaic cell, or a light emitting layer of a light emitting device. Other devices, such as laser diode, a photodetection device, an optical modulator, a transparent electrode and a window layer, can also be formed using the ternary semiconducting compound as the charge carrier transport.

    摘要翻译: 电气装置包括使用化学计量比为1:1:1的三元半导体化合物和选自I-II-V,I-III-IV,II-II-IV的元素组合形成的电荷载流子传输层 和II-VI; 或具有3:1:2的化学计量比和选自I-III-V组的元素组合; 或具有2:1:1的化学计量比和选自I-II-IV组的元素组合。 在一些实施例中,电荷载流子传输层用作光伏电池或发光器件的发光层的辐射吸收层。 还可以使用三元半导体化合物作为电荷载流子传输来形成诸如激光二极管,光电检测器件,光学调制器,透明电极和窗口层的其它器件。

    COMPOUNDS AND METHODS OF FABRICATING COMPOUNDS EXHIBITING GIANT MAGNETORESISTENCE AND SPIN-POLARIZED TUNNELING
    3.
    发明申请
    COMPOUNDS AND METHODS OF FABRICATING COMPOUNDS EXHIBITING GIANT MAGNETORESISTENCE AND SPIN-POLARIZED TUNNELING 有权
    复合化合物及其制备方法展示了巨大的磁体和旋转极化隧道

    公开(公告)号:US20110084429A1

    公开(公告)日:2011-04-14

    申请号:US12709099

    申请日:2010-02-19

    申请人: Claudia Felser

    发明人: Claudia Felser

    IPC分类号: H01F1/22

    CPC分类号: H01L43/10 H01F1/408

    摘要: The invention relates to inorganic intermetallic compounds having a PMR effect (combined GMR/CMR effect), which are characterized in that they contain at least two elements per formula unit and have a field sensitivity of less than 10% per 0.1 T at temperatures greater than 290 K. The invention also relates to composites consisting of these compounds, to a method for the production thereof and to their use, in particular, as magnetic field sensors or in the domain of spin electronics.

    摘要翻译: 本发明涉及具有PMR效应(组合GMR / CMR效应)的无机金属间化合物,其特征在于它们每个式单元含有至少两个元素,并且在大于 本发明还涉及由这些化合物组成的复合材料,其制备方法及其用途,特别是作为磁场传感器或在自旋电子学领域。

    Electrical Devices Formed using Ternary Semiconducting Compounds
    4.
    发明申请
    Electrical Devices Formed using Ternary Semiconducting Compounds 失效
    使用三元半导体化合物形成的电子器件

    公开(公告)号:US20120128017A1

    公开(公告)日:2012-05-24

    申请号:US13299326

    申请日:2011-11-17

    摘要: An electrical device includes a charge carrier transport layer formed using a ternary semiconducting compound having a stoichiometry of 1:1:1 and an element combination selected from the set of I-II-V, I-III-IV, II-II-IV, and I-I-VI; or having a stoichiometry of 3:1:2 and an element combination selected from the set of I-III-V; or having a stoichiometry of 2:1:1 and an element combination selected from the set of I-II-IV. In some embodiments, the charge carrier transport layer is used as the radiation absorption layer for a photovoltaic cell, or a light emitting layer of a light emitting device. Other devices, such as laser diode, a photodetection device, an optical modulator, a transparent electrode and a window layer, can also be formed using the ternary semiconducting compound as the charge carrier transport.

    摘要翻译: 电气装置包括使用化学计量比为1:1:1的三元半导体化合物和选自I-II-V,I-III-IV,II-II-IV的元素组合形成的电荷载流子传输层 和II-VI; 或具有3:1:2的化学计量比和选自I-III-V组的元素组合; 或具有2:1:1的化学计量比和选自I-II-IV组的元素组合。 在一些实施例中,电荷载流子传输层用作光伏电池或发光器件的发光层的辐射吸收层。 还可以使用三元半导体化合物作为电荷载流子传输来形成诸如激光二极管,光电检测器件,光学调制器,透明电极和窗口层的其它器件。

    Compounds and methods of fabricating compounds exhibiting giant magnetoresistence and spin-polarized tunneling
    7.
    发明授权
    Compounds and methods of fabricating compounds exhibiting giant magnetoresistence and spin-polarized tunneling 有权
    制备显示巨磁阻和自旋极化隧道的化合物的化合物和方法

    公开(公告)号:US08277575B2

    公开(公告)日:2012-10-02

    申请号:US12709099

    申请日:2010-02-19

    申请人: Claudia Felser

    发明人: Claudia Felser

    IPC分类号: H01F1/147 H01F1/047

    CPC分类号: H01L43/10 H01F1/408

    摘要: The invention relates to inorganic intermetallic compounds having a PMR effect (combined GMR/CMR effect), which are characterized in that they contain at least two elements per formula unit and have a field sensitivity of less than 10% per 0.1 T at temperatures greater than 290 K. The invention also relates to composites consisting of these compounds, to a method for the production thereof and to their use, in particular, as magnetic field sensors or in the domain of spin electronics.

    摘要翻译: 本发明涉及具有PMR效应(组合的GMR / CMR效应)的无机金属间化合物,其特征在于它们每个式单元含有至少两个元素,并且在大于 本发明还涉及由这些化合物组成的复合材料,其制备方法及其用途,特别是作为磁场传感器或在自旋电子学领域。

    Compounds and methods of fabricating compounds exhibiting giant magnetoresistance and spin-polarized tunneling
    8.
    发明授权
    Compounds and methods of fabricating compounds exhibiting giant magnetoresistance and spin-polarized tunneling 有权
    制造具有巨磁阻和自旋极化隧道效应的化合物的化合物和方法

    公开(公告)号:US07691215B2

    公开(公告)日:2010-04-06

    申请号:US10469098

    申请日:2002-02-22

    申请人: Claudia Felser

    发明人: Claudia Felser

    IPC分类号: C22C19/07

    CPC分类号: H01L43/10 H01F1/408

    摘要: The invention relates to inorganic intermetallic compounds having a PMR effect (combined GMR/CMR effect), which are characterized in that they contain at least two elements per formula unit and have a field sensitivity of less than 10% per 0.1 T at temperatures greater than 290 K. The invention also relates to composites consisting of these compounds, to a method for the production thereof an to their use, in particular, as magnetic field sensors or in the domain of spin electronics.

    摘要翻译: 本发明涉及具有PMR效应(组合的GMR / CMR效应)的无机金属间化合物,其特征在于它们每个式单元含有至少两个元素,并且在大于 本发明还涉及由这些化合物组成的复合材料,涉及一种用于生产它们的方法,特别是作为磁场传感器或在自旋电子学领域中的应用。