摘要:
The invention relates to inorganic, intermetallic, inhomogeneous compounds having a magnetic resistance effect and an intrinsic field sensitivity of at least 7% at 1 T at room temperature. The invention further relates to a method for the production and use thereof, particularly as magnetic field sensors or in spin electronics.
摘要:
An electrical device includes a charge carrier transport layer formed using a ternary semiconducting compound having a stoichiometry of 1:1:1 and an element combination selected from the set of I-II-V, I-III-IV, II-II-IV, and I-I-VI; or having a stoichiometry of 3:1:2 and an element combination selected from the set of I-III-V; or having a stoichiometry of 2:1:1 and an element combination selected from the set of I-II-IV. In some embodiments, the charge carrier transport layer is used as the radiation absorption layer for a photovoltaic cell, or a light emitting layer of a light emitting device. Other devices, such as laser diode, a photodetection device, an optical modulator, a transparent electrode and a window layer, can also be formed using the ternary semiconducting compound as the charge carrier transport.
摘要:
The invention relates to inorganic intermetallic compounds having a PMR effect (combined GMR/CMR effect), which are characterized in that they contain at least two elements per formula unit and have a field sensitivity of less than 10% per 0.1 T at temperatures greater than 290 K. The invention also relates to composites consisting of these compounds, to a method for the production thereof and to their use, in particular, as magnetic field sensors or in the domain of spin electronics.
摘要:
An electrical device includes a charge carrier transport layer formed using a ternary semiconducting compound having a stoichiometry of 1:1:1 and an element combination selected from the set of I-II-V, I-III-IV, II-II-IV, and I-I-VI; or having a stoichiometry of 3:1:2 and an element combination selected from the set of I-III-V; or having a stoichiometry of 2:1:1 and an element combination selected from the set of I-II-IV. In some embodiments, the charge carrier transport layer is used as the radiation absorption layer for a photovoltaic cell, or a light emitting layer of a light emitting device. Other devices, such as laser diode, a photodetection device, an optical modulator, a transparent electrode and a window layer, can also be formed using the ternary semiconducting compound as the charge carrier transport.
摘要:
The invention relates to inorganic, intermetallic, inhomogeneous compounds having a magnetic resistance effect and an intrinsic field sensitivity of at least 7% at 1 T at room temperature. The invention further relates to a method for the production and use thereof, particularly as magnetic field sensors or in spin electronics.
摘要:
An inorganic, intermetallic compound contains at least two elements per formula unit and consists of at least two phases, at least one phase being semiconducting or semimetallic, these at least two phases are immiscible with each other and are thermodynamically stable, so as to allow the thermal conductivity of semi-Heusler alloys to be reduced while at the same time maintaining the electrical conductivity and the thermoelectric voltage.
摘要:
The invention relates to inorganic intermetallic compounds having a PMR effect (combined GMR/CMR effect), which are characterized in that they contain at least two elements per formula unit and have a field sensitivity of less than 10% per 0.1 T at temperatures greater than 290 K. The invention also relates to composites consisting of these compounds, to a method for the production thereof and to their use, in particular, as magnetic field sensors or in the domain of spin electronics.
摘要:
The invention relates to inorganic intermetallic compounds having a PMR effect (combined GMR/CMR effect), which are characterized in that they contain at least two elements per formula unit and have a field sensitivity of less than 10% per 0.1 T at temperatures greater than 290 K. The invention also relates to composites consisting of these compounds, to a method for the production thereof an to their use, in particular, as magnetic field sensors or in the domain of spin electronics.