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    Method of making a patterned metal oxide film
    1.
    发明授权
    Method of making a patterned metal oxide film 有权
    制作图案化金属氧化物膜的方法

    公开(公告)号：US07381633B2

    公开(公告)日：2008-06-03

    申请号：US11044424

    申请日：2005-01-27

    申请人： John O. Thompson ,  Curt Lee Nelson ,  David Punsalan

    发明人： John O. Thompson ,  Curt Lee Nelson ,  David Punsalan

    IPC分类号： H01L21/44

    CPC分类号： C03C17/253 ,  C03C2218/113 ,  C03C2218/328 ,  C23C18/04 ,  C23C18/06 ,  C23C18/1216 ,  C23C18/125 ,  C23C18/1254 ,  C23C18/1279 ,  C23C18/1295 ,  C23C18/14

    摘要： A method of making a patterned metal oxide film includes jetting a sol-gel solution on a substrate. The sol-gel solution is dried to form a gel layer on the substrate. Portions of the gel layer are irradiated to pattern the gel layer and to form exposed portions. Irradiation causes the exposed portions of the gel layer to become at least one of substantially condensed to an oxide, substantially densified, substantially cured, and combinations thereof. The unexposed portions of the gel layer are removed, thereby forming the patterned metal oxide film.

    摘要翻译： 制造图案化金属氧化物膜的方法包括在基底上喷射溶胶 - 凝胶溶液。 将溶胶 - 凝胶溶液干燥以在基材上形成凝胶层。 照射凝胶层的一部分以对凝胶层进行图案化并形成暴露部分。 照射导致凝胶层的暴露部分变成基本上冷凝成氧化物，基本致密化，基本固化的组合和其组合中的至少一个。 去除凝胶层的未曝光部分，从而形成图案化的金属氧化物膜。

    Microelectronic device patterned by ablating and subsequently sintering said microelectronic device
    3.
    发明授权
    Microelectronic device patterned by ablating and subsequently sintering said microelectronic device 失效
    通过烧蚀和随后烧结所述微电子器件来图形化的微电子器件

    公开(公告)号：US07923837B2

    公开(公告)日：2011-04-12

    申请号：US11981011

    申请日：2007-10-31

    申请人： Chinmay Betrabet ,  Curt Lee Nelson

    发明人： Chinmay Betrabet ,  Curt Lee Nelson

    IPC分类号： H01L29/40

    CPC分类号： H01L27/124 ,  H01L27/1288 ,  H01L27/1292

    摘要： A microelectronic device includes a non-polymeric substrate, an organic interlayer, and a indium tin oxide layer formed on the organic interlayer; the indium tin oxide layer including an ablated feature within said indium tin oxide layer, wherein said indium tin oxide layer is formed by an indium tin oxide solution that is laser ablated prior to sintering.Applicant respectfully submits that the above amendments bring the Abstract into compliance with MPEP §608.01 (b). Accordingly, Applicant respectfully requests reconsideration and withdrawal of the objection to the abstract.

    摘要翻译： 微电子器件包括在有机中间层上形成的非聚合物基底，有机中间层和氧化铟锡层; 所述铟锡氧化物层包括在所述铟锡氧化物层内的烧蚀特征，其中所述氧化铟锡层由在烧结之前被激光烧蚀的氧化铟锡溶液形成。