-
公开(公告)号:US20180059948A1
公开(公告)日:2018-03-01
申请号:US15690328
申请日:2017-08-30
申请人: Jongwon Lee , Dongeun Shin
发明人: Jongwon Lee , Dongeun Shin
CPC分类号: G06F3/064 , G06F3/0604 , G06F3/0673 , G06F12/0238 , G06F2212/1016 , G06F2212/1032 , G06F2212/202 , G06F2212/7201 , G06F2212/7205
摘要: A storage device includes a nonvolatile memory device and a controller. The nonvolatile memory device includes a plurality of memory blocks, each of which includes string selection transistors connected to a plurality of string selection lines, ground selection transistors connected to a plurality of ground selection lines, and memory cells connected to a plurality of word lines. The controller reads valid data groups of a first memory block and writes the read valid data groups in a second memory block, during a read reclaim operation. The controller assigns locations of the second memory block, at which the valid data groups are written, based on read counts of the valid data groups.
-
公开(公告)号:US20150248244A1
公开(公告)日:2015-09-03
申请号:US14315669
申请日:2014-06-26
申请人: DONG-YOUNG SEO , YOUNG BONG KIM , DONGEUN SHIN
发明人: DONG-YOUNG SEO , YOUNG BONG KIM , DONGEUN SHIN
IPC分类号: G06F3/06
CPC分类号: G06F3/0611 , G06F3/0619 , G06F3/0635 , G06F3/064 , G06F3/0647 , G06F3/0658 , G06F3/0679 , G06F12/06 , G06F2206/1014 , G06F2212/1032 , G06F2212/2022 , G11C11/5628 , G11C11/5671 , G11C16/00 , G11C16/0483 , G11C2211/5641 , G11C2211/5642
摘要: A method of operating a memory system includes; storing data in a buffer region of the nonvolatile memory, later issuing a migration request directed to the data stored in the buffer region and executing a migration operation to move the data from buffer region to a main region of the nonvolatile memory device. Upon completion of the migration operation, marking a migration operation completion time, and after an initial verify shift (IVS) time has elapsed following the migration operation completion time, updating a mapping table associated with the data in view of the executed migration operation.
-
公开(公告)号:US10114575B2
公开(公告)日:2018-10-30
申请号:US15690328
申请日:2017-08-30
申请人: Jongwon Lee , Dongeun Shin
发明人: Jongwon Lee , Dongeun Shin
摘要: A storage device includes a nonvolatile memory device and a controller. The nonvolatile memory device includes a plurality of memory blocks, each of which includes string selection transistors connected to a plurality of string selection lines, ground selection transistors connected to a plurality of ground selection lines, and memory cells connected to a plurality of word lines. The controller reads valid data groups of a first memory block and writes the read valid data groups in a second memory block, during a read reclaim operation. The controller assigns locations of the second memory block, at which the valid data groups are written, based on read counts of the valid data groups.
-
-