PLATING METHOD USING ANALYSIS PHOTORESIST RESIDUE IN PLATING SOLUTION
    1.
    发明申请
    PLATING METHOD USING ANALYSIS PHOTORESIST RESIDUE IN PLATING SOLUTION 审中-公开
    在分散溶液中使用分析光电残留的镀层方法

    公开(公告)号:US20120183696A1

    公开(公告)日:2012-07-19

    申请号:US13279785

    申请日:2011-10-24

    IPC分类号: B05D1/18 B05D3/02 C25D21/14

    CPC分类号: C25D21/12

    摘要: A plating method includes supplying a plating solution into a plating bath, immersing a first substrate having a lower metal interconnection and a photoresist pattern in the plating solution, performing a first plating process and forming a first plating pattern on the first substrate, removing the first substrate from the plating solution, collecting a sample of the plating solution, analyzing a photoresist residue included in the sample, immersing a second substrate in the plating solution, and performing a second plating process and forming a second plating pattern on the second substrate.

    摘要翻译: 电镀方法包括将电镀溶液供应到电镀槽中,将具有下金属互连和光致抗蚀剂图案的第一衬底浸入电镀液中,在第一衬底上进行第一电镀工艺和形成第一电镀图案, 收集电镀溶液样品,分析样品中包含的光致抗蚀剂残渣,将第二衬底浸入电镀溶液中,并在第二衬底上进行第二电镀工艺和形成第二电镀图案。

    Methods of manufacturing a semiconductor device using compositions for etching copper
    2.
    发明授权
    Methods of manufacturing a semiconductor device using compositions for etching copper 有权
    使用用于蚀刻铜的组合物制造半导体器件的方法

    公开(公告)号:US07951653B1

    公开(公告)日:2011-05-31

    申请号:US12948331

    申请日:2010-11-17

    IPC分类号: H01L21/00

    摘要: A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

    摘要翻译: 制造半导体器件的方法包括制备其上形成有铜的引线的衬底。 该方法还包括通过发射激光束切割引信线,以及将用于蚀刻铜的组合物施加到基底上,以精细蚀刻引信线的切割区域并基本上除去铜残留物和氧化铜残留物中的至少一种 保留在切割区附近。 用于蚀刻铜的组合物包括约0.01至约10重量%的有机酸,约0.01至1.0重量%的氧化剂和质子溶剂。

    OPTICAL MEMBER AND DISPLAY APPARATUS INCLUDING THE SAME
    4.
    发明申请
    OPTICAL MEMBER AND DISPLAY APPARATUS INCLUDING THE SAME 有权
    光学构件和显示装置,包括它们

    公开(公告)号:US20130141786A1

    公开(公告)日:2013-06-06

    申请号:US13692095

    申请日:2012-12-03

    IPC分类号: C09J133/06 G02B5/30

    摘要: An optical member, an optical adhesive, and a display apparatus, the optical member including a transparent conductive film; an optical adhesive layer on the transparent conductive film; and a polarizer plate stacked on the optical adhesive layer, wherein a surface resistance difference Rs2−Rs1 of a specimen including the optical adhesive layer is less than about 0.2Ω, the specimen being prepared by manufacturing the polarizer plate having the optical adhesive layer thereon and stacking two transparent conductive films on opposite upper sides of the optical adhesive layer, where Rs1 is an initial surface resistance of the specimen and Rs2 is a surface resistance of the specimen kept at 70° C. and 95% RH for 48 hours.

    摘要翻译: 光学构件,光学粘合剂和显示装置,所述光学构件包括透明导电膜; 透明导电膜上的光学粘合剂层; 以及层叠在所述光学粘合剂层上的偏振片,其中,包含所述光学粘合剂层的试样的表面电阻差Rs2-Rs1小于约0.2Om,所述试样通过制造其上具有光学粘合剂层的偏振片和 在光学粘合剂层的相对的上侧堆叠两个透明导电膜,其中Rs1是样品的初始表面电阻,Rs2是保持在70℃和95%RH下48小时的样品的表面电阻。

    Method of cleaning a quartz part
    5.
    发明授权
    Method of cleaning a quartz part 失效
    清洗石英部件的方法

    公开(公告)号:US07985297B2

    公开(公告)日:2011-07-26

    申请号:US12500141

    申请日:2009-07-09

    IPC分类号: H01L21/02

    摘要: A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

    摘要翻译: 提供了石英部件的清洗液和清洗石英部件的方法。 清洗溶液包含约5至约35重量%的铵化合物,约7至约55重量%的酸性氧化剂,约5至约30重量%的氟化合物和剩余量的水。 可以除去石英部件表面上的残余薄膜和杂质,同时减少对石英部件的损伤。

    Semiconductor substrate cleaning methods, and methods of manufacture using same
    6.
    发明授权
    Semiconductor substrate cleaning methods, and methods of manufacture using same 失效
    半导体衬底清洗方法及其制造方法

    公开(公告)号:US07943562B2

    公开(公告)日:2011-05-17

    申请号:US12332568

    申请日:2008-12-11

    IPC分类号: C11D7/32

    摘要: In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.

    摘要翻译: 在清洁组合物中,清洁半导体衬底的方法和制造半导体器件的方法,所述清洁组合物包括约0.5至约5重量%的有机氢氧化铵化合物,约0.1至约3重量%的 氟化物化合物,约0.1至约3重量%的缓冲剂,约0.5至约5重量%的蚀刻促进剂,剩余的水。

    METHOD OF CLEANING A QUARTZ PART
    7.
    发明申请
    METHOD OF CLEANING A QUARTZ PART 失效
    清洁QUARTZ零件的方法

    公开(公告)号:US20100009883A1

    公开(公告)日:2010-01-14

    申请号:US12500141

    申请日:2009-07-09

    IPC分类号: C11D3/20

    摘要: A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

    摘要翻译: 提供了石英部件的清洗液和清洗石英部件的方法。 清洗溶液包含约5至约35重量%的铵化合物,约7至约55重量%的酸性氧化剂,约5至约30重量%的氟化合物和剩余量的水。 可以除去石英部件表面上的残余薄膜和杂质,同时减少对石英部件的损伤。

    METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING COMPOSITIONS FOR ETCHING COPPER
    8.
    发明申请
    METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING COMPOSITIONS FOR ETCHING COPPER 有权
    使用组合物制造半导体器件以蚀刻铜的方法

    公开(公告)号:US20110130000A1

    公开(公告)日:2011-06-02

    申请号:US12948331

    申请日:2010-11-17

    IPC分类号: H01L21/60

    摘要: A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

    摘要翻译: 制造半导体器件的方法包括制备其上形成有铜的引线的衬底。 该方法还包括通过发射激光束切割引信线,以及将用于蚀刻铜的组合物施加到基底上,以精细蚀刻引信线的切割区域并基本上除去铜残留物和氧化铜残留物中的至少一种 保留在切割区附近。 用于蚀刻铜的组合物包括约0.01至约10重量%的有机酸,约0.01至1.0重量%的氧化剂和质子溶剂。

    Optical member and display apparatus including the same
    9.
    发明授权
    Optical member and display apparatus including the same 有权
    光学构件和包括该构件的显示装置

    公开(公告)号:US09296929B2

    公开(公告)日:2016-03-29

    申请号:US13692095

    申请日:2012-12-03

    摘要: An optical member, an optical adhesive, and a display apparatus, the optical member including a transparent conductive film; an optical adhesive layer on the transparent conductive film; and a polarizer plate stacked on the optical adhesive layer, wherein a surface resistance difference Rs2−Rs1 of a specimen including the optical adhesive layer is less than about 0.2Ω, the specimen being prepared by manufacturing the polarizer plate having the optical adhesive layer thereon and stacking two transparent conductive films on opposite upper sides of the optical adhesive layer, where Rs1 is an initial surface resistance of the specimen and Rs2 is a surface resistance of the specimen kept at 70° C. and 95% RH for 48 hours.

    摘要翻译: 光学构件,光学粘合剂和显示装置,所述光学构件包括透明导电膜; 透明导电膜上的光学粘合剂层; 以及叠层在所述光学粘合剂层上的偏振片,其中包括所述光学粘合剂层的试样的表面电阻差Rs2-Rs1小于约0.2Ω;所述试样通过制造其上具有光学粘合剂层的偏振片制备 并且在光学粘合剂层的相对的上侧上堆叠两个透明导电膜,其中Rs1是样品的初始表面电阻,Rs2是保持在70℃和95%RH下48小时的样品的表面电阻。