利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

20 条记录 (耗时 0.034 秒)

    PLATING METHOD USING ANALYSIS PHOTORESIST RESIDUE IN PLATING SOLUTION
    1.
    发明申请
    PLATING METHOD USING ANALYSIS PHOTORESIST RESIDUE IN PLATING SOLUTION 审中-公开
    在分散溶液中使用分析光电残留的镀层方法

    公开(公告)号：US20120183696A1

    公开(公告)日：2012-07-19

    申请号：US13279785

    申请日：2011-10-24

    申请人： Jung-Dae Park ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sung-Hoon Bae ,  Yoon-Mi Lee ,  Da-Hee Lee ,  Min-Jung Kim

    发明人： Jung-Dae Park ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sung-Hoon Bae ,  Yoon-Mi Lee ,  Da-Hee Lee ,  Min-Jung Kim

    IPC分类号： B05D1/18 ,  B05D3/02 ,  C25D21/14

    CPC分类号： C25D21/12

    摘要： A plating method includes supplying a plating solution into a plating bath, immersing a first substrate having a lower metal interconnection and a photoresist pattern in the plating solution, performing a first plating process and forming a first plating pattern on the first substrate, removing the first substrate from the plating solution, collecting a sample of the plating solution, analyzing a photoresist residue included in the sample, immersing a second substrate in the plating solution, and performing a second plating process and forming a second plating pattern on the second substrate.

    摘要翻译： 电镀方法包括将电镀溶液供应到电镀槽中，将具有下金属互连和光致抗蚀剂图案的第一衬底浸入电镀液中，在第一衬底上进行第一电镀工艺和形成第一电镀图案， 收集电镀溶液样品，分析样品中包含的光致抗蚀剂残渣，将第二衬底浸入电镀溶液中，并在第二衬底上进行第二电镀工艺和形成第二电镀图案。

    Methods of manufacturing a semiconductor device using compositions for etching copper
    2.
    发明授权
    Methods of manufacturing a semiconductor device using compositions for etching copper 有权
    使用用于蚀刻铜的组合物制造半导体器件的方法

    公开(公告)号：US07951653B1

    公开(公告)日：2011-05-31

    申请号：US12948331

    申请日：2010-11-17

    申请人： Jung-Dae Park ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

    发明人： Jung-Dae Park ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

    IPC分类号： H01L21/00

    CPC分类号： H01L21/32134 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

    摘要翻译： 制造半导体器件的方法包括制备其上形成有铜的引线的衬底。 该方法还包括通过发射激光束切割引信线，以及将用于蚀刻铜的组合物施加到基底上，以精细蚀刻引信线的切割区域并基本上除去铜残留物和氧化铜残留物中的至少一种 保留在切割区附近。 用于蚀刻铜的组合物包括约0.01至约10重量％的有机酸，约0.01至1.0重量％的氧化剂和质子溶剂。

    Method of cleaning a quartz part
    3.
    发明授权
    Method of cleaning a quartz part 失效
    清洗石英部件的方法

    公开(公告)号：US07985297B2

    公开(公告)日：2011-07-26

    申请号：US12500141

    申请日：2009-07-09

    申请人： Jung-Dae Park ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

    发明人： Jung-Dae Park ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

    IPC分类号： H01L21/02

    CPC分类号： C11D11/0052 ,  C11D7/08 ,  C11D7/28 ,  C11D7/3209

    摘要： A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

    摘要翻译： 提供了石英部件的清洗液和清洗石英部件的方法。 清洗溶液包含约5至约35重量％的铵化合物，约7至约55重量％的酸性氧化剂，约5至约30重量％的氟化合物和剩余量的水。 可以除去石英部件表面上的残余薄膜和杂质，同时减少对石英部件的损伤。

    Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same
    8.
    发明授权
    Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same 有权
    用于除去光致抗蚀剂的组合物，去除光致抗蚀剂的方法及使用其制造半导体器件的方法

    公开(公告)号：US07678751B2

    公开(公告)日：2010-03-16

    申请号：US11296000

    申请日：2005-12-06

    申请人： Jung-Dae Park ,  Sang-Eon Lee ,  Sang-Mun Chon ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun

    发明人： Jung-Dae Park ,  Sang-Eon Lee ,  Sang-Mun Chon ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun

    IPC分类号： C11D7/50

    CPC分类号： C11D7/264 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047

    摘要： Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.

    摘要翻译： 公开了除去光致抗蚀剂的组合物，去除光刻胶的方法以及使用组合物制造半导体器件的方法。 组合物可以包括酮化合物和第一极性非质子溶剂。 组合物还可以包括酮化合物和第二极性非质子溶剂。 此外，组合物可以包括第一极性非质子溶剂和具有或不具有酮化合物的第二极性非质子溶剂。 第一极性非质子溶剂具有醚化合物和酯化合物中的至少一种，第二极性非质子溶剂具有含硫化合物和含氮化合物中的至少一种。

    Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same
    9.
    发明申请
    Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same 有权
    用于除去光致抗蚀剂的组合物，去除光致抗蚀剂的方法及使用其制造半导体器件的方法

    公开(公告)号：US20060122084A1

    公开(公告)日：2006-06-08

    申请号：US11296000

    申请日：2005-12-06

    申请人： Jung-Dae Park ,  Sang-Eon Lee ,  Sang-Mun Chon ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun

    发明人： Jung-Dae Park ,  Sang-Eon Lee ,  Sang-Mun Chon ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun

    IPC分类号： C11D7/32

    CPC分类号： C11D7/264 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047

    摘要： Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.

    摘要翻译： 公开了除去光致抗蚀剂的组合物，去除光刻胶的方法以及使用组合物制造半导体器件的方法。 组合物可以包括酮化合物和第一极性非质子溶剂。 组合物还可以包括酮化合物和第二极性非质子溶剂。 此外，组合物可以包括第一极性非质子溶剂和具有或不具有酮化合物的第二极性非质子溶剂。 第一极性非质子溶剂具有醚化合物和酯化合物中的至少一种，第二极性非质子溶剂具有含硫化合物和含氮化合物中的至少一种。

    Semiconductor substrate cleaning methods, and methods of manufacture using same
    10.
    发明授权
    Semiconductor substrate cleaning methods, and methods of manufacture using same 失效
    半导体衬底清洗方法及其制造方法

    公开(公告)号：US07943562B2

    公开(公告)日：2011-05-17

    申请号：US12332568

    申请日：2008-12-11

    申请人： Da-Hee Lee ,  Jung-Dae Park ,  Hun-Jung Yi ,  Tae-Hyo Choi

    发明人： Da-Hee Lee ,  Jung-Dae Park ,  Hun-Jung Yi ,  Tae-Hyo Choi

    IPC分类号： C11D7/32

    CPC分类号： C11D3/0073 ,  C11D7/10 ,  C11D7/3209 ,  C11D11/0047 ,  H01L21/02071

    摘要： In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.

    摘要翻译： 在清洁组合物中，清洁半导体衬底的方法和制造半导体器件的方法，所述清洁组合物包括约0.5至约5重量％的有机氢氧化铵化合物，约0.1至约3重量％的 氟化物化合物，约0.1至约3重量％的缓冲剂，约0.5至约5重量％的蚀刻促进剂，剩余的水。