Serial routing of optical signals
    1.
    发明授权
    Serial routing of optical signals 失效
    光信号的串行路由

    公开(公告)号:US07529435B2

    公开(公告)日:2009-05-05

    申请号:US10856120

    申请日:2004-05-28

    IPC分类号: G02B6/12 H04B10/00

    摘要: An optical signal distribution network including a semiconductor substrate including a waveguide formed therein to carry an optical signal; and a plurality of detectors within the waveguide and serially arranged along its length, each of the detectors being capable of detecting the optical signal passing through it and sufficiently transparent to the optical signal to enable the optical signal to reach and be detected by all of the plurality of detectors.

    摘要翻译: 一种光信号分配网络,包括:半导体衬底,包括形成在其中的波导,以承载光信号; 以及波导内的多个检测器,并沿着其长度串联布置,每个检测器能够检测通过光信号并对光信号充分透明的光信号,以使光信号能够被所有的光信号 多个检测器。

    Method for planarizing an integrated circuit structure using low melting
inorganic material and flowing while depositing
    2.
    发明授权
    Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing 失效
    使用低熔点无机材料平面化集成电路结构并在沉积时流动的方法

    公开(公告)号:US5112776A

    公开(公告)日:1992-05-12

    申请号:US644853

    申请日:1991-01-22

    摘要: A planarizing process is disclosed for planarizing an integrated circuit structure using a low melting inorganic planarizing material which comprises flowing while depositing a low melting inorganic planarizing layer such as a boron oxide glass over a layer of insulating material such as an oxide of silicon and then dry etching the low melting inorganic planarizing layer to planarize the structure. The method eliminates the need for separate coating, drying, and curing steps associated with the application of organic-based planarizing layers usually carried out outside of a vacuum apparatus. In a preferred embodiment, the deposition steps and the etching step are carried out without removing the integrated circuit structure from the vacuum apparatus. An additional etching step may be carried out after depositing the insulating layer and prior to deposition of the planarizing layer to remove any voids formed in the insulating layer.

    摘要翻译: 公开了一种用于使用低熔点无机平面化材料对集成电路结构进行平面化的平面化工艺,该无机平面化材料包括在诸如氧化硅玻璃之类的绝缘材料层上沉积低熔点无机平面化层的同时流动,然后干燥 蚀刻低熔点无机平面化层以使结构平坦化。 该方法消除了对通常在真空装置外进行的有机基平坦化层的应用的独立涂布,干燥和固化步骤的需要。 在优选实施例中,沉积步骤和蚀刻步骤在不从真空装置中去除集成电路结构的情况下进行。 在沉积绝缘层之后并且在沉积平坦化层以去除在绝缘层中形成的任何空隙之前,可以进行另外的蚀刻步骤。