公开(公告)号：US09065253B2

公开(公告)日：2015-06-23

申请号：US12778857

申请日：2010-05-12

Applicant: Manjeri P. Anantram ,  Daryoush Shiri

Inventor： Manjeri P. Anantram ,  Daryoush Shiri

IPC: H01S5/00 ,  H01S5/34 ,  B82Y20/00 ,  H01S5/06 ,  H01L33/18 ,  H01S5/022 ,  H01S5/04

CPC classification number: H01S5/341 ,  B82Y20/00 ,  H01L33/18 ,  H01S5/02248 ,  H01S5/041 ,  H01S5/0607 ,  H01S5/0612 ,  H01S5/3403

Abstract: Strain modulated nanostructures for optoelectronic devices and associated systems and methods are disclosed. A semiconductor laser in accordance with one embodiment of the disclosure, for example, comprises an active region having a nanowire structure formed from a semiconductor material. The nanowire structure of the semiconductor material has a bandgap that is indirect in a first strain state. The laser further includes a straining unit coupled to the active region. The straining unit is configured to modulate the nanowire structure such that the nanowire structure reaches a second strain state in which the bandgap becomes direct or substantially direct and, in operation, emits photons upon electron-hole recombination.

Abstract translation: 公开了用于光电器件和相关系统和方法的应变调制纳米结构。 根据本公开的一个实施例的半导体激光器例如包括具有由半导体材料形成的纳米线结构的有源区。 半导体材料的纳米线结构具有在第一应变状态下是间接的带隙。 激光器还包括耦合到有源区域的应变单元。 应变单元被配置为调制纳米线结构，使得纳米线结构达到第二应变状态，其中带隙变得直接或基本上直接，并且在操作中，电子 - 空穴复合发射光子。

公开(公告)号：US20100290217A1

公开(公告)日：2010-11-18

申请号：US12778857

申请日：2010-05-12

Applicant: Manjeri P. Anantram ,  Daryoush Shiri

Inventor： Manjeri P. Anantram ,  Daryoush Shiri

IPC: F21L17/00 ,  H01S5/30

CPC classification number: H01S5/341 ,  B82Y20/00 ,  H01L33/18 ,  H01S5/02248 ,  H01S5/041 ,  H01S5/0607 ,  H01S5/0612 ,  H01S5/3403

Abstract: Strain modulated nanostructures for optoelectronic devices and associated systems and methods are disclosed. A semiconductor laser in accordance with one embodiment of the disclosure, for example, comprises an active region having a nanowire structure formed from a semiconductor material. The nanowire structure of the semiconductor material has a bandgap that is indirect in a first strain state. The laser further includes a straining unit coupled to the active region. The straining unit is configured to modulate the nanowire structure such that the nanowire structure reaches a second strain state in which the bandgap becomes direct or substantially direct and, in operation, emits photons upon electron-hole recombination.

Abstract translation: 公开了用于光电器件和相关系统和方法的应变调制纳米结构。 根据本公开的一个实施例的半导体激光器例如包括具有由半导体材料形成的纳米线结构的有源区域。 半导体材料的纳米线结构具有在第一应变状态下是间接的带隙。 激光器还包括耦合到有源区域的应变单元。 应变单元被配置为调制纳米线结构，使得纳米线结构达到第二应变状态，其中带隙变得直接或基本上直接，并且在操作中，电子 - 空穴复合发射光子。