公开(公告)号：US20160356740A1

公开(公告)日：2016-12-08

申请号：US14731795

申请日：2015-06-05

申请人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

发明人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

IPC分类号： G01N27/414 ,  B01L3/00

CPC分类号： G01N27/4148 ,  B01L3/5027 ,  B01L3/502715 ,  B01L3/50273 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/04 ,  B01L2300/041 ,  B01L2300/0645 ,  B01L2300/0887 ,  B01L2400/0415 ,  B01L2400/0418 ,  G01N27/28 ,  G01N27/414 ,  H01L21/67259 ,  H01L29/4933 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7833 ,  H01L31/119

摘要： Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

公开(公告)号：US20160370314A1

公开(公告)日：2016-12-22

申请号：US15251141

申请日：2016-08-30

申请人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

发明人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

IPC分类号： G01N27/414 ,  G01N27/28 ,  B01L3/00

CPC分类号： G01N27/4148 ,  B01L3/5027 ,  B01L3/502715 ,  B01L3/50273 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/04 ,  B01L2300/041 ,  B01L2300/0645 ,  B01L2300/0887 ,  B01L2400/0415 ,  B01L2400/0418 ,  G01N27/28 ,  G01N27/414 ,  H01L21/67259 ,  H01L29/4933 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7833 ,  H01L31/119

摘要： Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

摘要翻译： 保护传感器场效应晶体管（SFET）。 SFET包括半导体衬底，场效应晶体管和感测电极。 SFET还包括由半导体衬底支撑的分析物接收区域，与感测电极接触，并被配置为接收分析物流体。 分析物接收区域至少部分封闭。 在一些实施方案中，分析物接收区域可以是在分析物入口和分析物出口之间延伸的封闭分析物通道。 在这些实施例中，封闭的分析物通道延伸使得分析物入口和分析物出口与感测电极间隔开。 在一些实施例中，SFET包括至少部分地包围分析物接收区并由可溶于分析物流体内的覆盖材料形成的覆盖结构。 这些方法包括制造SFET的方法。

公开(公告)号：US09857329B2

公开(公告)日：2018-01-02

申请号：US15251141

申请日：2016-08-30

申请人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

发明人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

IPC分类号： G01N27/403 ,  G01N27/414 ,  B01L3/00 ,  H01L21/67 ,  G01N27/28 ,  H01L31/119 ,  H01L29/66

CPC分类号： G01N27/4148 ,  B01L3/5027 ,  B01L3/502715 ,  B01L3/50273 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/04 ,  B01L2300/041 ,  B01L2300/0645 ,  B01L2300/0887 ,  B01L2400/0415 ,  B01L2400/0418 ,  G01N27/28 ,  G01N27/414 ,  H01L21/67259 ,  H01L29/4933 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7833 ,  H01L31/119

摘要： Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

公开(公告)号：US09494550B1

公开(公告)日：2016-11-15

申请号：US14731795

申请日：2015-06-05

申请人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

发明人： Patrice M. Parris ,  Weize Chen ,  Richard J. de Souza ,  Jose Fernandez Villasenor ,  Md M. Hoque ,  David E. Niewolny ,  Raymond M. Roop

IPC分类号： G01N27/403 ,  G01N27/414 ,  B01L3/00 ,  H01L21/67 ,  H01L31/119 ,  H01L29/66

CPC分类号： G01N27/4148 ,  B01L3/5027 ,  B01L3/502715 ,  B01L3/50273 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/04 ,  B01L2300/041 ,  B01L2300/0645 ,  B01L2300/0887 ,  B01L2400/0415 ,  B01L2400/0418 ,  G01N27/28 ,  G01N27/414 ,  H01L21/67259 ,  H01L29/4933 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7833 ,  H01L31/119

摘要： Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

摘要翻译： 保护传感器场效应晶体管（SFET）。 SFET包括半导体衬底，场效应晶体管和感测电极。 SFET还包括由半导体衬底支撑的分析物接收区域，与感测电极接触，并被配置为接收分析物流体。 分析物接收区域至少部分封闭。 在一些实施方案中，分析物接收区域可以是在分析物入口和分析物出口之间延伸的封闭分析物通道。 在这些实施例中，封闭的分析物通道延伸使得分析物入口和分析物出口与感测电极间隔开。 在一些实施例中，SFET包括至少部分地包围分析物接收区并由可溶于分析物流体内的覆盖材料形成的覆盖结构。 这些方法包括制造SFET的方法。