Thin-film edge field emitter device
    2.
    发明授权
    Thin-film edge field emitter device 失效
    薄膜边缘场发射器件

    公开(公告)号:US06246069B1

    公开(公告)日:2001-06-12

    申请号:US09062735

    申请日:1998-04-20

    IPC分类号: H01L2906

    摘要: A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

    摘要翻译: 薄膜边缘场发射器装置包括具有第一部分并且具有从第一部分延伸的突起的基底,突起限定至少一个侧壁,侧壁构成第二部分。 发射极层设置在包括第二部分的衬底上,发射极层选自半导体和导体,并且是包括延伸超出第二部分并限定暴露的发射极边缘的部分的薄膜。 一对支撑层设置在发射极层的相对侧上,该对支撑层各自选自由半导体和导体组成的组,并且每个具有比发射极层更高的功函数。