摘要:
Disclosed is a micro-electro-mechanical switch, including a substrate having a gate connection, a source connection, a drain connection and a switch structure, coupled to the substrate. The switch structure includes a beam member, an anchor and a hinge. The beam member having a length sufficient to overhang both the gate connection and the drain connection. The anchor coupling the switch structure to the substrate, the anchor having a width. The hinge coupling the beam member to the anchor at a respective position along the anchor's length, the hinge to flex in response to a charge differential established between the gate and the beam member. The switch structure having gaps between the substrate and the anchor in regions proximate to the hinges.
摘要:
Disclosed are a method, device, and system for a microelectromechanical (MEM) device control system that can control the operation of a MEM device. The system can include a microelectromechanical device and a control circuit. The micromechanical device can include a moveable member coupled to an electrical terminal, a sensor, responsive to a movement of the moveable member, can output a sensor signal based on the movement of the moveable member, and an actuating electrode for receiving a control signal. The control circuit can be responsive to the signals output by the sensor and outputs the control signal to the actuating electrode.
摘要:
Disclosed are a method, device, and system for a microelectromechanical (MEM) device control system that can control the operation of a MEM device. The system can include a microelectromechanical device and a control circuit. The micromechanical device can include a moveable member coupled to an electrical terminal, a sensor, responsive to a movement of the moveable member, can output a sensor signal based on the movement of the moveable member, and an actuating electrode for receiving a control signal. The control circuit can be responsive to the signals output by the sensor and outputs the control signal to the actuating electrode.
摘要:
An ESD protection network (20) provides energy discharge paths for an ESD event at an external circuit port (42). The paths include one portion (28) into an integrated circuit substrate (72) and other portions (29, 30) from the substrate to external power supply ports (43, 44). In particular, these paths include energy discharge routes around on-circuit voltage sources.
摘要:
With an input voltage V.sub.in between first and second input terminals (24, 25), a charge pump (20) generates output voltages +3V.sub.in and -3V.sub.in at first and second output terminals (26, 28). The output voltages are generated in first and second switching phases. The charge pump includes first, second and third pump capacitors (36, 46, 56), switch networks (38, 48, 58) and reservoir capacitors (26, 28). It is particularly suited for implementation with MOS switching transistors.
摘要:
A circuit for generating a voltage is disclosed. The voltage has an amplitude greater than an available power supply. The circuit includes a driver to supply the voltage on an output terminal to an electrode of a touch sense array. The circuit also includes a charge pump array coupled to the driver. The charge pump array includes an array of charge pumps to supply an input voltage to the driver. The circuit also includes a feedback circuit coupled to the charge pump array. The feedback circuit is configured to measure the input voltage and to select different combinations of the array of charge pumps to maintain the voltage on the output terminal.
摘要:
A method of driving a switch having a movable member and a contact first applies (to the switch) a first signal having a first level, and then applies a second signal having a second level to the switch (after applying the first signal). The first level is greater than the second level. One or both of the first and second signals cause the movable member to move to electrically connect with the contact.
摘要:
An integrated circuit chip having formed thereon a voltage control circuit supply adapted to provide one of a pair of voltages selectively in accordance with an operating mode of the circuit. The circuit includes a comparator circuit fed by the pair of voltage sources. A first switch is controlled by the comparator circuit. A first one of the pair of voltage sources is fed through a second switch which may be a transistor or a diode. An input of the first switch is fed to a second one of the pair of voltage sources. The comparator circuit is arranged to place the switch in a non-conducting condition in one operating mode to couple the first one of the pair of voltage sources to the output of the circuit while isolating the second one of the pair of voltage sources supplies from the output of the circuit during such operating mode, and to place the switch in a conducting condition in the other one of the operating modes to de-couple the first one of the pair of voltage sources from the output of the circuit while coupling the second one of the pair of voltage sources to the output of the circuit output during such other one of the operating modes. The standby voltage control circuit allows a higher voltage (e.g., +12 volts) to be power-down while a lower voltage (e.g., +5 volts) is still applied without forward biasing any internal diodes and thus keeping currents low. Such is accomplished by the internal second switch, the comparator, and the switch. In normal operation mode, the second switch is conducting; in power-down operation mode, the second switch is non-conducting the comparator closes the first switch connecting the output of the standby voltage control circuit to the lower voltage.
摘要:
A method of driving a switch having a movable member and a contact first applies (to the switch) a first signal having a first level, and then applies a second signal having a second level to the switch (after applying the first signal). The first level is greater than the second level. One or both of the first and second signals cause the movable member to move to electrically connect with the contact.
摘要:
An input protection device is provided for protecting a circuit structure which is coupled to a first node, the device comprising a first lightly-doped region of P-type material with a lightly doped well of N-type material formed in it. Two regions of heavily doped N-type and P-type material, which are electrically connected to the first node, are formed in the well of N-type material. A third heavily doped region of N type material is formed in the first lightly-doped region of P-type material and is electrically connected to a reference node. In a first aspect of this invention, the third heavily doped region of N type material is formed in a second well of N-type material, which in turn is formed in the first lightly-doped region of P-type material. In this first aspect of the invention a further region of heavily doped P-type material is formed in the second well of N-type material, this further region of heavily doped P-type material being electrically connected to the reference node. In a second aspect to the invention, a further region of heavily doped P-type material is formed in the first lightly-doped region of P-type material. In a third aspect to the invention, the third heavily doped region of N type material is formed in a second well of N-type material, which in turn is formed in the first lightly-doped region of P-type material. In this third aspect of the invention a further region of heavily doped P-type material is formed in the second well of N-type material, this further region of heavily doped P-type material being electrically connected to the reference node, with a further region of heavily doped P-type material formed in the first lightly-doped region of P-type material. Accordingly, an input protection device for protecting pins of an integrated circuit is described having both bipolar and unipolar characteristics. The input protection device may be constructed as a discrete device or as part of an integrated circuit and provides for breakdown voltages in excess of a supply voltage to an integrated circuit. The characteristics, in particular the breakdown voltage, of the input protection device are alterable by adjusting its layout, in contrast to a known method of altering such characteristics by altering doping levels.