公开(公告)号：US20150104888A1

公开(公告)日：2015-04-16

申请号：US14511492

申请日：2014-10-10

Applicant: Do Hyeong LEE

Inventor： Do Hyeong LEE

IPC: C23C16/52 ,  G01K13/00 ,  G01N27/00 ,  H01L21/66 ,  H01L21/67

CPC classification number: C23C16/52 ,  G01K13/00 ,  G01N27/00 ,  H01L21/67103 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/12

Abstract: The present invention relates, in general, to an apparatus for determining the presence of abnormality of a heater for a semiconductor thin film deposition apparatus, such as an aluminum or ceramic heater and, more particularly, to a technique for monitoring a phenomenon occurring in an apparatus during a semiconductor thin film deposition process and a phenomenon occurring in a heater, thereby determining the presence of abnormality of the heater. The present invention also relates to a technique for measuring, in real time, a thickness of a thin film deposited by driving of a heater during a thin film deposition process in a chamber, thereby determining the presence of abnormality of a wafer and the presence of abnormality of the heater, based on the measurement result.

Abstract translation: 本发明一般涉及用于确定诸如铝或陶瓷加热器的半导体薄膜沉积装置的加热器的异常存在的装置，更具体地，涉及用于监测在 在半导体薄膜沉积工艺期间的装置和在加热器中发生的现象，从而确定加热器的异常的存在。 本发明还涉及一种用于在室内薄膜沉积工艺中通过驱动加热器实时测量沉积的薄膜的厚度的技术，从而确定晶片的异常的存在以及存在 基于测量结果，加热器的异常。

公开(公告)号：US20180127878A1

公开(公告)日：2018-05-10

申请号：US15346738

申请日：2016-11-09

Applicant: Do Hyeong LEE

Inventor： Do Hyeong LEE

IPC: C23C16/50 ,  C23C16/34 ,  H01J37/32

CPC classification number: H01J37/32009 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/503 ,  C23C16/515 ,  H01J2237/3321

Abstract: A coating device of component for semiconductor manufacturing apparatus comprises a source among pulse type plasma source, ICP source, CCP source, CCP+ICP source and plasma source using a remote plasma to be carried out nitride treatment by a gas among N2, NH3, CH4 and N2O being supplied into a chamber; and a DC voltage for forming a plasma by said source and for supplying 50 KeV˜100 KeV of voltage toward a susceptor placed thereon with a basic material or a pulse voltage for injecting ion.

公开(公告)号：US20190003055A1

公开(公告)日：2019-01-03

申请号：US16124319

申请日：2018-09-07

Applicant: Do Hyeong LEE

Inventor： Do Hyeong LEE

IPC: C23C16/52 ,  H01L21/67 ,  G01K13/00 ,  G01N27/00 ,  H01L21/66

Abstract: The present invention relates, in general, to an apparatus for determining the presence of abnormality of a heater for a semiconductor thin film deposition apparatus, such as an aluminum or ceramic heater and, more particularly, to a technique for monitoring a phenomenon occurring in an apparatus during a semiconductor thin film deposition process and a phenomenon occurring in a heater, thereby determining the presence of abnormality of the heater. The present invention also relates to a technique for measuring, in real time, a thickness of a thin film deposited by driving of a heater during a thin film deposition process in a chamber, thereby determining the presence of abnormality of a wafer and the presence of abnormality of the heater, based on the measurement result.