公开(公告)号：US08895942B2

公开(公告)日：2014-11-25

申请号：US12211640

申请日：2008-09-16

Applicant: Junjun Liu ,  Jacques Faguet ,  Eric M. Lee ,  Dorel I. Toma ,  Hongyu Yue

Inventor： Junjun Liu ,  Jacques Faguet ,  Eric M. Lee ,  Dorel I. Toma ,  Hongyu Yue

IPC: H01L21/67 ,  B23K26/08 ,  B23K26/12 ,  C23C16/56

CPC classification number: H01L21/67115 ,  B23K26/082 ,  B23K26/12 ,  B23K26/127 ,  C23C16/56

Abstract: A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.

Abstract translation: 描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置 用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

公开(公告)号：US08048326B2

公开(公告)日：2011-11-01

申请号：US10531469

申请日：2003-10-31

Applicant: Hongyu Yue ,  Hieu A. Lam

Inventor： Hongyu Yue ,  Hieu A. Lam

IPC: C23F1/00 ,  G01L21/30

CPC classification number: H01J37/32935 ,  H01J37/32963

Abstract: The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.

Abstract translation: 本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统，包括处理室，耦合到处理室并被配置为测量至少一个端点信号的诊断系统，以及耦合到诊断系统的控制器，并且被配置为确定 从端点信号原位蚀刻速率和蚀刻速度均匀性中的至少一个。 此外，提出了确定用于蚀刻等离子体处理系统中的衬底上的层的蚀刻性质的原位方法，包括以下步骤：提供该层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统来测量至少一个端点信号，其中所述端点信号包括端点转换; 以及从所述厚度与所述端点转变期间的时间与所述蚀刻的开始时间之间的差的比率确定所述蚀刻速率。

公开(公告)号：US20110232677A1

公开(公告)日：2011-09-29

申请号：US13072663

申请日：2011-03-25

Applicant: Junjun LIU ,  Dorel I. TOMA ,  Hongyu YUE

Inventor： Junjun LIU ,  Dorel I. TOMA ,  Hongyu YUE

IPC: B08B7/00 ,  B08B13/00

CPC classification number: H01L21/67028 ,  B08B7/0042 ,  B08B7/005 ,  B08B7/0057 ,  H01L21/67115 ,  Y10S430/145

Abstract: A method and system for treating a substrate and, in particular, a method and system for cleaning a low dielectric constant (low-k) dielectric film to remove, among other things, undesired residue is described. The method includes irradiating a region on a substrate containing one or more layers or structures with infrared (IR) radiation and optionally ultraviolet (UV) radiation to remove material or undesired residues from the one or more layers or structures. Furthermore, the method may optionally include exposing at least a portion of the region to a gas or vapor jet emanating from a gas nozzle along a jet axis in a direction towards the substrate.

Abstract translation: 描述了用于处理基底的方法和系统，特别是用于清洁低介电常数（低k）电介质膜以除去其它不需要的残留物的方法和系统。 该方法包括用含有红外（IR）辐射和任选的紫外线（UV）辐射的含有一个或多个层或结构的基底上的区域照射以从一个或多个层或结构去除材料或不期望的残留物。 此外，该方法可以可选地包括将该区域的至少一部分暴露于沿着喷射轴从朝向衬底的方向从气体喷嘴发出的气体或蒸汽射流。

公开(公告)号：US07211196B2

公开(公告)日：2007-05-01

申请号：US10809474

申请日：2004-03-26

Applicant: Hieu A. Lam ,  Hongyu Yue

Inventor： Hieu A. Lam ,  Hongyu Yue

IPC: H01L21/66

CPC classification number: G01N21/68

Abstract: A method and system for determining a substrate type during a seasoning process is presented. An optical signal is acquired from a process in a plasma processing system, and the optical signal is compared to a pre-determined threshold value. Depending upon the comparison, the substrate type is determined to be of a correct type, or an incorrect type.

Abstract translation: 提出了一种在调味过程中确定底物类型的方法和系统。 从等离子体处理系统中的处理获取光信号，将光信号与预定阈值进行比较。 根据比较，基板类型被确​​定为正确的类型或不正确的类型。

公开(公告)号：US20050283321A1

公开(公告)日：2005-12-22

申请号：US10868346

申请日：2004-06-16

Applicant: Hongyu Yue ,  Hieu Lam

Inventor： Hongyu Yue ,  Hieu Lam

IPC: H01J37/32 ,  G01N31/00 ,  G06F19/00

CPC classification number: H01J37/32623 ,  H01J37/32935

Abstract: A method and apparatus is presented for using a pressure control system to monitor a plasma processing system. By monitoring variations in the state of the pressure control system, a fault condition, an erroneous fault condition, or a service condition can be detected. For example, the service condition can include monitoring the accumulation of residue between successive preventative maintenance events.

Abstract translation: 提出了一种使用压力控制系统监测等离子体处理系统的方法和装置。 通过监视压力控制系统的状态的变化，可以检测故障状况，错误故障状况或服务条件。 例如，服务条件可以包括在连续的预防性维护事件之间监视残留物的累积。

公开(公告)号：US20050227494A1

公开(公告)日：2005-10-13

申请号：US10812347

申请日：2004-03-30

Applicant: Fumihiko Higuchi ,  Hiroyuki Takahashi ,  Akiteru Ko ,  Hongyu Yue ,  Asao Yamashita ,  Hiromitsu Kambara

Inventor： Fumihiko Higuchi ,  Hiroyuki Takahashi ,  Akiteru Ko ,  Hongyu Yue ,  Asao Yamashita ,  Hiromitsu Kambara

IPC: H01L21/311 ,  H01L21/66 ,  H01L21/302

CPC classification number: H01L22/20 ,  H01L21/31116 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and system for trimming a feature on a substrate is described. During a chemical treatment of the substrate, the substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. An inert gas is also introduced, and the flow rate of the inert gas is selected in order to affect a target trim amount during the trimming of the feature.

Abstract translation: 描述了用于修整衬底上的特征的方法和系统。 在基板的化学处理期间，在包括表面温度和气体压力在内的受控条件下将基板暴露于气态化学物质，例如HF / NH 3。 还引入惰性气体，并且选择惰性气体的流量以便在修整特征期间影响目标修整量。

公开(公告)号：US20050221513A1

公开(公告)日：2005-10-06

申请号：US10812952

申请日：2004-03-31

Applicant: Hongyu Yue ,  Lee Chen

Inventor： Hongyu Yue ,  Lee Chen

IPC: G05B19/418 ,  H01L21/28 ,  H01L21/66 ,  G01R31/26 ,  H01L21/3205 ,  H01L21/4763

CPC classification number: H01L22/20 ,  H01L21/28123 ,  H01L2924/0002 ,  Y02P90/14 ,  H01L2924/00

Abstract: A method and processing tool are provided for controlling trimming of a gate electrode structure containing a gate electrode layer with a first dimension by determining the first dimension of the gate electrode structure, choosing a target trimmed dimension, feeding forward the first dimension and the target trimmed dimension to a process model to create a set of process parameters, performing a trimming process on the gate electrode structure, including controlling the set of process parameter, trimming the gate electrode structure, and measuring a trimmed dimension of the gate electrode structure. The trimming process may be repeated at least once until the target trimmed dimension is obtained, where the trimmed dimension may be fed backward to the process model to create a new set of process parameters.

Abstract translation: 提供了一种方法和处理工具，用于通过确定栅极电极结构的第一尺寸，选择目标修整尺寸，向前馈送第一维和目标修整来控制包含具有第一尺寸的栅极电极层的栅电极结构的修整 以形成一组工艺参数，对栅电极结构进行修整处理，包括控制一组工艺参数，修整栅电极结构以及测量栅电极结构的修整尺寸。 修剪过程可以重复至少一次，直到获得目标修整尺寸，其中修整的尺寸可以被反馈到过程模型以创建新的一组过程参数。

公开(公告)号：US20050118812A1

公开(公告)日：2005-06-02

申请号：US10498819

申请日：2002-12-31

Applicant: John Donohue ,  Hongyu Yue

Inventor： John Donohue ,  Hongyu Yue

IPC: G03F7/20 ,  G05B19/418 ,  H01L21/02 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/461 ,  H01L21/66

CPC classification number: H01J37/32935 ,  G05B19/41875 ,  G05B2219/32018 ,  G05B2219/32201 ,  H01L22/20 ,  Y02P90/14 ,  Y02P90/22

Abstract: A method for material processing utilizing a material processing system (1) to perform a process. The method a process, measures a scan of data, and transforms the data scan into a signature including at least one spatial component. The scan of data can include a process performance parameter (14) such as an etch rate, an etch selectivity, a deposition rate, a film property, etc. A relationship can be determined between the measured signature and a set of at least one controllable process parameter (12) using multivariate analysis, and this relationship can be utilized to improve the scan of data corresponding to a process performance parameter. For example, utilizing this relationship to minimize the spatial components of the scan of data can affect an improvement in the process uniformity.

Abstract translation: 一种利用材料处理系统（1）进行处理的材料处理方法。 该方法一个过程，测量数据的扫描，并将数据扫描变换成包括至少一个空间分量的签名。 数据的扫描可以包括诸如蚀刻速率，蚀刻选择性，沉积速率，膜性质等的工艺性能参数（14）。可以在所测量的标记和至少一个可控的 过程参数（12）使用多变量分析，并且可以利用该关系来改进对应于过程性能参数的数据的扫描。 例如，利用这种关系来最小化数据扫描的空间分量可以影响过程均匀性的改善。

公开(公告)号：US06893975B1

公开(公告)日：2005-05-17

申请号：US10813570

申请日：2004-03-31

Applicant: Hongyu Yue ,  Asao Yamashita

Inventor： Hongyu Yue ,  Asao Yamashita

IPC: H01L21/311 ,  H01L21/66 ,  H01L21/302

CPC classification number: H01L22/20 ,  H01L21/31144

Abstract: A system and method for transferring a pattern from an overlying layer into an underlying layer, while laterally trimming a feature present within the pattern is described. The pattern transfer is performed using an etch process according to a process recipe, wherein at least one variable parameter within the process recipe is adjusted given a target trim amount. The adjustment of the variable parameter is achieved using a process model established for relating trim amount data with the variable parameter.

公开(公告)号：US06825920B2

公开(公告)日：2004-11-30

申请号：US10446939

申请日：2003-05-29

Applicant: Hieu A. Lam ,  Hongyu Yue ,  John Shriner

Inventor： Hieu A. Lam ,  Hongyu Yue ,  John Shriner

IPC: G01N2100

CPC classification number: H01L21/67253 ,  A61K48/005 ,  C23C16/4404 ,  C23C16/52 ,  G01N33/574 ,  G01N2333/4706 ,  H01J37/32935 ,  H01L21/67069

Abstract: A plasma processing system that comprises a process chamber, a plasma source, a light detection device and a controller. The controller is useful for determining a seasoning state of the plasma processing system. The present invention further provides a method of determining the seasoning state of a plasma processing system comprising the steps of forming a first plasma in the process chamber utilizing the plasma source; measuring a first signal related to light emitted from the first plasma using the light detection device and storing the first signal using the controller; forming a second plasma in the process chamber utilizing the plasma source; measuring a second signal related to light emitted from the second plasma using the light detection device and storing the second signal using the controller; and correlating a change between the first signal and the second signal with a seasoning state of the plasma processing system.

Abstract translation: 一种等离子体处理系统，包括处理室，等离子体源，光检测装置和控制器。 控制器可用于确定等离子体处理系统的调味状态。 本发明还提供了一种确定等离子体处理系统的调味状态的方法，包括以下步骤：利用等离子体源在处理室中形成第一等离子体; 使用所述光检测装置测量与从所述第一等离子体发射的光有关的第一信号，并使用所述控制器存储所述第一信号; 在所述处理室中利用所述等离子体源形成第二等离子体; 使用所述光检测装置测量与从所述第二等离子体发射的光有关的第二信号，并使用所述控制器存储所述第二信号; 以及利用所述等离子体处理系统的调节状态将所述第一信号和所述第二信号之间的变化相关联。