公开(公告)号：US20090098343A1

公开(公告)日：2009-04-16

申请号：US12180418

申请日：2008-07-25

申请人： Chantal ARENA ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lidow ,  Subhash Mahajan ,  Ranjan Datta ,  Rahul Ajay Trivedi ,  Ilsu Han

发明人： Chantal ARENA ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lidow ,  Subhash Mahajan ,  Ranjan Datta ,  Rahul Ajay Trivedi ,  Ilsu Han

IPC分类号： H01L21/20 ,  B32B3/10

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02647

摘要： This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials.

摘要翻译： 本发明提供了用于制造具有低缺陷密度且任选地具有所选晶体极性的III族氮化物半导体材料的基本上连续的层的方法。 所述方法包括在不规则地布置在模板结构上的III族氮化物材料的多个柱/岛的上部上的外延生长成核和/或接种。 岛的上部具有低缺陷密度，并且可选地具有选定的晶体极性。 本发明还包括具有基本连续的掩模材料层的模板结构，通过该掩模材料出现柱/岛的上部。 本发明还包括这样的模板结构。 本发明可以应用于宽范围的半导体材料，包括元素半导体，例如Si（硅）与应变Si（sSi）和/或Ge（锗）的组合，以及化合物半导体，例如II-VI族和 III-V族化合物半导体材料。