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    EPITAXIAL METHODS AND TEMPLATES GROWN BY THE METHODS
    1.
    发明申请
    EPITAXIAL METHODS AND TEMPLATES GROWN BY THE METHODS 有权
    方法生成的外来方法和模板

    公开(公告)号：US20090098343A1

    公开(公告)日：2009-04-16

    申请号：US12180418

    申请日：2008-07-25

    申请人： Chantal ARENA ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lidow ,  Subhash Mahajan ,  Ranjan Datta ,  Rahul Ajay Trivedi ,  Ilsu Han

    发明人： Chantal ARENA ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lidow ,  Subhash Mahajan ,  Ranjan Datta ,  Rahul Ajay Trivedi ,  Ilsu Han

    IPC分类号： H01L21/20 ,  B32B3/10

    CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02647

    摘要： This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials.

    摘要翻译： 本发明提供了用于制造具有低缺陷密度且任选地具有所选晶体极性的III族氮化物半导体材料的基本上连续的层的方法。 所述方法包括在不规则地布置在模板结构上的III族氮化物材料的多个柱/岛的上部上的外延生长成核和/或接种。 岛的上部具有低缺陷密度，并且可选地具有选定的晶体极性。 本发明还包括具有基本连续的掩模材料层的模板结构，通过该掩模材料出现柱/岛的上部。 本发明还包括这样的模板结构。 本发明可以应用于宽范围的半导体材料，包括元素半导体，例如Si（硅）与应变Si（sSi）和/或Ge（锗）的组合，以及化合物半导体，例如II-VI族和 III-V族化合物半导体材料。

    Epitaxial methods and templates grown by the methods
    2.
    发明授权
    Epitaxial methods and templates grown by the methods 有权
    通过方法生长的外延方法和模板

    公开(公告)号：US08574968B2

    公开(公告)日：2013-11-05

    申请号：US12180418

    申请日：2008-07-25

    申请人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow ,  Subhash Mahajan ,  Ranjan Datta ,  Rahul Ajay Trivedi ,  Ilsu Han

    发明人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow ,  Subhash Mahajan ,  Ranjan Datta ,  Rahul Ajay Trivedi ,  Ilsu Han

    IPC分类号： H01L21/82

    CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02647

    摘要： This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials.

    摘要翻译： 本发明提供了用于制造具有低缺陷密度且任选地具有所选晶体极性的III族氮化物半导体材料的基本上连续的层的方法。 所述方法包括在不规则地布置在模板结构上的III族氮化物材料的多个柱/岛的上部上的外延生长成核和/或接种。 岛的上部具有低缺陷密度，并且可选地具有选定的晶体极性。 本发明还包括具有基本连续的掩模材料层的模板结构，通过该掩模材料出现柱/岛的上部。 本发明还包括这样的模板结构。 本发明可以应用于宽范围的半导体材料，包括元素半导体，例如Si（硅）与应变Si（sSi）和/或Ge（锗）的组合，以及化合物半导体，例如II-VI族和 III-V族化合物半导体材料。

    Thermalization of gaseous precursors in CVD reactors
    3.
    发明授权
    Thermalization of gaseous precursors in CVD reactors 有权
    CVD反应器中气态前体的热化

    公开(公告)号：US08388755B2

    公开(公告)日：2013-03-05

    申请号：US12261796

    申请日：2008-10-30

    申请人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow

    发明人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow

    IPC分类号： C23C16/455 ,  C23C16/46 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

    CPC分类号： H01L21/0262 ,  C23C16/303 ,  C23C16/448 ,  C30B25/105

    摘要： The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

    摘要翻译： 本发明涉及半导体处理领域，并提供通过在其反应之前促进前体气体的更有效的热化来改善半导体材料的化学气相沉积（CVD）的装置和方法。 在优选的实施方案中，本发明包括传热结构及其在CVD反应器内的排列，以促进对流动的工艺气体的热传递。 在适用于对来自加热灯的辐射透明的CVD反应器的某些优选实施方案中，本发明包括放射吸收表面，用于拦截来自加热灯的辐射并将其转移到流动的工艺气体。

    THERMALIZATION OF GASEOUS PRECURSORS IN CVD REACTORS
    4.
    发明申请
    THERMALIZATION OF GASEOUS PRECURSORS IN CVD REACTORS 有权
    CVD反应器中气相前体的热化

    公开(公告)号：US20090214785A1

    公开(公告)日：2009-08-27

    申请号：US12261796

    申请日：2008-10-30

    申请人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lindow

    发明人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lindow

    IPC分类号： C23C16/44 ,  C23C16/54

    CPC分类号： H01L21/0262 ,  C23C16/303 ,  C23C16/448 ,  C30B25/105

    摘要： The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

    摘要翻译： 本发明涉及半导体处理领域，并提供通过在其反应之前促进前体气体的更有效的热化来改善半导体材料的化学气相沉积（CVD）的装置和方法。 在优选的实施方案中，本发明包括传热结构及其在CVD反应器内的排列，以促进对流动的工艺气体的热传递。 在适用于对来自加热灯的辐射透明的CVD反应器的某些优选实施方案中，本发明包括放射吸收表面，用于拦截来自加热灯的辐射并将其转移到流动的工艺气体。

    APPARATUS FOR DELIVERING PRECURSOR GASES TO AN EPITAXIAL GROWTH SUBSTRATE
    6.
    发明申请
    APPARATUS FOR DELIVERING PRECURSOR GASES TO AN EPITAXIAL GROWTH SUBSTRATE 有权
    用于将前驱气体输送到外来生长基质的装置

    公开(公告)号：US20100258053A1

    公开(公告)日：2010-10-14

    申请号：US12747969

    申请日：2008-12-05

    申请人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lindow ,  Dennis L. Goodwin

    发明人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lindow ,  Dennis L. Goodwin

    IPC分类号： C23C16/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

    CPC分类号： C30B25/14 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  Y10T137/8593

    摘要： This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that spatially separated from each other up until they impinge of a growth substrate and that have volumes adequate for high volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chamber without hindering the operation of mechanical and robot substrate handling equipment used with such chambers. This invention is useful for the high volume growth of numerous elemental and compound semiconductors, and particularly useful for the high volume growth of Group III-V compounds and GaN.

    摘要翻译： 本发明提供了气体注射器装置，其延伸到生长室中，以便提供更精确的热化前体气体的输送。 改进的注射器可以将加热的前体气体分配到在空间上彼此分离的流中的生长室中，直到它们撞击生长衬底并且具有足以用于高体积制造的体积。 重要的是，改进的喷射器的尺寸和构造使得其可以适应现有的商业生长室，而不会妨碍与这种室一起使用的机械和机器人基板处理设备的操作。 本发明对于许多元素和化合物半导体的高体积生长是有用的，并且特别适用于III-V族化合物和GaN的高体积生长。

    Apparatus for delivering precursor gases to an epitaxial growth substrate
    8.
    发明授权
    Apparatus for delivering precursor gases to an epitaxial growth substrate 有权
    用于将前体气体输送到外延生长衬底的装置

    公开(公告)号：US09175419B2

    公开(公告)日：2015-11-03

    申请号：US12747969

    申请日：2008-12-05

    申请人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow ,  Dennis L. Goodwin

    发明人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow ,  Dennis L. Goodwin

    IPC分类号： C23C16/00 ,  C30B25/14 ,  C23C16/455

    CPC分类号： C30B25/14 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  Y10T137/8593

    摘要： This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that are spatially separated from each other up until they impinge on a growth substrate and that have volumes adequate for high-volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chambers without hindering the operation of mechanical and robot substrate-handling equipment used with such chambers. This invention is useful for the high-volume growth of numerous elemental and compound semiconductors, and particularly useful for the high-volume growth of Group III-V compounds and GaN.

    摘要翻译： 本发明提供了气体注射器装置，其延伸到生长室中，以便提供更精确的热化前体气体的输送。 改进的注射器可以将加热的前体气体分配到在空间上彼此分离的流中的生长室中，直到它们撞击到生长衬底上并且具有足以用于大批量制造的体积。 重要的是，改进的喷射器的尺寸和构造使得其可以适应现有的商业生长室，而不会妨碍与这种室一起使用的机械和机器人基板处理设备的操作。 本发明对于许多元素和化合物半导体的高容量生长是有用的，并且特别适用于III-V族化合物和GaN的大量生长。

    DEPOSITION SYSTEMS HAVING ACCESS GATES AT DESIRABLE LOCATIONS, AND RELATED METHODS
    9.
    发明申请
    DEPOSITION SYSTEMS HAVING ACCESS GATES AT DESIRABLE LOCATIONS, AND RELATED METHODS 审中-公开
    在所需位置具有通道门的沉积系统及相关方法

    公开(公告)号：US20130052806A1

    公开(公告)日：2013-02-28

    申请号：US13591718

    申请日：2012-08-22

    申请人： Ronald Thomas Bertram, JR. ,  Christiaan J. Werkhoven ,  Chantal Arena ,  Ed Lindow

    发明人： Ronald Thomas Bertram, JR. ,  Christiaan J. Werkhoven ,  Chantal Arena ,  Ed Lindow

    IPC分类号： C23C16/458 ,  B23P11/00 ,  H01L21/20

    CPC分类号： C30B25/14 ,  C23C16/303 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/54 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T137/0402

    摘要： Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device.

    摘要翻译： 沉积系统包括反应室和至少部分地设置在反应室内的基板支撑结构。 该系统还包括至少一个气体注入装置和至少一个真空装置，它们一起用于使工艺气体流过反应室。 该系统还包括至少一个进入门，工件基底可通过该入口门装载到反应室中并从反应室中卸载。 至少一个进入门位于远离气体注入装置的位置。 可以使用这种沉积系统进行半导体材料的沉积方法。 制造这种沉积系统的方法可以包括在远离气体注入装置的位置处将进入门连接到反应室。