公开(公告)号：US08574968B2

公开(公告)日：2013-11-05

申请号：US12180418

申请日：2008-07-25

Applicant: Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow ,  Subhash Mahajan ,  Ranjan Datta ,  Rahul Ajay Trivedi ,  Ilsu Han

Inventor： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow ,  Subhash Mahajan ,  Ranjan Datta ,  Rahul Ajay Trivedi ,  Ilsu Han

IPC: H01L21/82

CPC classification number: H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02647

Abstract: This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials.

Abstract translation: 本发明提供了用于制造具有低缺陷密度且任选地具有所选晶体极性的III族氮化物半导体材料的基本上连续的层的方法。 所述方法包括在不规则地布置在模板结构上的III族氮化物材料的多个柱/岛的上部上的外延生长成核和/或接种。 岛的上部具有低缺陷密度，并且可选地具有选定的晶体极性。 本发明还包括具有基本连续的掩模材料层的模板结构，通过该掩模材料出现柱/岛的上部。 本发明还包括这样的模板结构。 本发明可以应用于宽范围的半导体材料，包括元素半导体，例如Si（硅）与应变Si（sSi）和/或Ge（锗）的组合，以及化合物半导体，例如II-VI族和 III-V族化合物半导体材料。

公开(公告)号：US20090091002A1

公开(公告)日：2009-04-09

申请号：US12180370

申请日：2008-07-25

Applicant: Chantal ARENA ,  Subhash Mahajan ,  Ranjan Datta

Inventor： Chantal ARENA ,  Subhash Mahajan ,  Ranjan Datta

IPC: H01L29/06 ,  H01L21/20

CPC classification number: H01L21/0242 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647

Abstract: This invention provides methods for fabricating substantially continuous layers of group III nitride semiconductor materials having low defect densities. The methods include epitaxial growth of nucleation layers on a base substrate, thermally treatment of said nucleation layer and epitaxial growth of a discontinuous masking layer. The methods outlined promote defect reduction through masking, annihilation and coalescence, therefore producing semiconductor structures with low defect densities. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials.

Abstract translation: 本发明提供了用于制造具有低缺陷密度的III族氮化物半导体材料的基本上连续的层的方法。 该方法包括在基底衬底上成核层的外延生长，所述成核层的热处理和不连续掩模层的外延生长。 所概述的方法通过掩蔽，湮灭和聚结来促进缺陷减少，因此产生具有低缺陷密度的半导体结构。 本发明可以应用于宽范围的半导体材料，包括元素半导体，例如Si（硅）与应变Si（sSi）和/或Ge（锗）的组合，以及化合物半导体，例如II-VI族和 III-V族化合物半导体材料。

公开(公告)号：US08236593B2

公开(公告)日：2012-08-07

申请号：US12600120

申请日：2008-05-14

Applicant: Chantal Arena ,  Subhash Mahajan ,  Ilsu Han

Inventor： Chantal Arena ,  Subhash Mahajan ,  Ilsu Han

IPC: H01L21/00

CPC classification number: H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

Abstract: The invention provides methods which can be applied during the epitaxial growth of two or more layers of semiconductor materials so that the qualities of successive layer are successively improved. In preferred embodiments, surface defects present in one epitaxial layer are capped with a masking material. A following layer is then grown so it extends laterally above the caps according to the known phenomena of epitaxial lateral overgrowth. The methods of the invention can be repeated by capping surface defects in the following layer and then epitaxially growing a second following layer according to ELO. The invention also includes semiconductor structures fabricated by these methods.

Abstract translation: 本发明提供了可以在两层或更多层半导体材料的外延生长期间应用的方法，使得连续层的质量连续改善。 在优选实施例中，存在于一个外延层中的表面缺陷用掩模材料封盖。 然后根据已知的外延横向过度生长现象生长随后的层，使得其沿着帽盖横向延伸。 本发明的方法可以通过覆盖下一层中的表面缺陷，然后根据ELO外延生长第二个后续层来重复。 本发明还包括通过这些方法制造的半导体结构。

公开(公告)号：US20110024747A1

公开(公告)日：2011-02-03

申请号：US12937192

申请日：2008-11-14

Applicant: Chantal Arena ,  Subhash Mahajan

Inventor： Chantal Arena ,  Subhash Mahajan

IPC: H01L29/04 ,  H01L21/322

CPC classification number: H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02639 ,  H01L21/02647

Abstract: The invention provides methods which can be applied during the epitaxial growth of two or more layers of Group III-nitride semiconductor materials so that the qualities of successive layer are successively improved. In preferred embodiments, surface defects interact with a protective layer of a protective material to form amorphous complex regions capable of preventing the further propagation of defects and dislocations. The invention also includes semiconductor structures fabricated by these methods.

Abstract translation: 本发明提供了可以在两层或更多层III族氮化物半导体材料的外延生长期间应用的方法，使得连续层的质量连续改善。 在优选的实施方案中，表面缺陷与保护材料的保护层相互作用以形成能够防止缺陷和位错进一步扩散的非晶复合区。 本发明还包括通过这些方法制造的半导体结构。

公开(公告)号：US4620854A

公开(公告)日：1986-11-04

申请号：US789727

申请日：1985-10-21

Applicant: Daniel Brasen ,  Michael A. DiGiuseppe ,  Jose A. Lourenco ,  Subhash Mahajan

Inventor： Daniel Brasen ,  Michael A. DiGiuseppe ,  Jose A. Lourenco ,  Subhash Mahajan

IPC: C30B19/04 ,  H01L21/306

CPC classification number: C30B29/40 ,  C30B19/04

Abstract: In the liquid phase epitaxy growth of Group III-V compound semiconductors using boat-slider apparatus, melt-carry-over is essentially eliminated by prebaking the metallic solvent (e.g., In shot) in the boat to form ingots and then etching the ingots in dilute nitric or hydrochloric acid prior to adding solutes (e.g., GaAs, InP, dopants). This process removes contaminants which coalesce on the ingots and cause poor wipe-off.

Abstract translation: 在使用舟形滑块装置的III-V族化合物半导体的液相外延生长中，基本上通过预先烘烤船中的金属溶剂（例如，In shot）来形成锭，然后将锭蚀刻 在添加溶质（例如，GaAs，InP，掺杂剂）之前稀释硝酸或盐酸。 这个过程可以去除污染物，这些污染物聚集在晶锭上并导致不良擦拭。

公开(公告)号：US4566934A

公开(公告)日：1986-01-28

申请号：US437472

申请日：1982-10-28

Applicant: Daniel Brasen ,  Michael A. DiGiuseppe ,  Jose A. Lourenco ,  Subhash Mahajan

Inventor： Daniel Brasen ,  Michael A. DiGiuseppe ,  Jose A. Lourenco ,  Subhash Mahajan

IPC: C30B19/02 ,  C30B19/04 ,  H01L21/208 ,  C30B19/00

CPC classification number: C30B29/40 ,  C30B19/04

Abstract: In the liquid phase epitaxy growth of Group III-V compound semiconductors using boat-slider apparatus, melt-carry-over is essentially eliminated by prebaking the metallic solvent (e.g., In shot) in the boat to form ingots and then etching the ingots in dilute nitric or hydrochloric acid prior to adding solutes (e.g., GaAs, InP, dopants). This process removes contaminants which coalesce on the ingots and cause poor wipe-off.

Abstract translation: 在使用舟形滑块装置的III-V族化合物半导体的液相外延生长中，基本上通过预先烘烤船中的金属溶剂（例如，In shot）来形成锭，然后将锭蚀刻 在添加溶质（例如，GaAs，InP，掺杂剂）之前稀释硝酸或盐酸。 这个过程可以去除污染物，这些污染物聚集在晶锭上并导致不良擦拭。

公开(公告)号：US20130126896A1

公开(公告)日：2013-05-23

申请号：US13738406

申请日：2013-01-10

Applicant: Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

Inventor： Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

IPC: H01L29/20

CPC classification number: H01L29/2003 ,  H01L21/0237 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/0262

Abstract: Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

Abstract translation: 本发明的实施例涉及制造半导体结构的方法以及通过这些方法制造的半导体结构。 在一些实施例中，该方法可用于制造诸如InGaN的III-V材料的半导体结构。 通过使用不同的生长条件生长子层来制造半导体层，以改善所得层的均匀性，改善所得层的表面粗糙度和/或使层能够生长到增加的厚度而不发生 的应变松弛。

公开(公告)号：US08377802B2

公开(公告)日：2013-02-19

申请号：US13069900

申请日：2011-03-23

Applicant: Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

Inventor： Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

IPC: H01L21/20

CPC classification number: H01L29/2003 ,  H01L21/0237 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/0262

Abstract: Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

公开(公告)号：US20100133548A1

公开(公告)日：2010-06-03

申请号：US12600120

申请日：2008-05-14

Applicant: Chantal Arena ,  Subhash Mahajan ,  Ilsu Han

Inventor： Chantal Arena ,  Subhash Mahajan ,  Ilsu Han

IPC: H01L29/20 ,  H01L21/322

CPC classification number: H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

Abstract: The invention provides methods which can be applied during the epitaxial growth of two or more layers of semiconductor materials so that the qualities of successive layer are successively improved. In preferred embodiments, surface defects present in one epitaxial layer are capped with a masking material. A following layer is then grown so it extends laterally above the caps according to the known phenomena of epitaxial lateral overgrowth. The methods of the invention can be repeated by capping surface defects in the following layer and then epitaxially growing a second following layer according to ELO. The invention also includes semiconductor structures fabricated by these methods.

Abstract translation: 本发明提供了可以在两层或更多层半导体材料的外延生长期间应用的方法，使得连续层的质量连续改善。 在优选实施例中，存在于一个外延层中的表面缺陷用掩模材料封盖。 然后根据已知的外延横向过度生长现象生长随后的层，使得其沿着帽盖横向延伸。 本发明的方法可以通过覆盖下一层中的表面缺陷，然后根据ELO外延生长第二个后续层来重复。 本发明还包括通过这些方法制造的半导体结构。

公开(公告)号：US09412580B2

公开(公告)日：2016-08-09

申请号：US13988996

申请日：2011-11-23

Applicant: Chantal Arena ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow ,  Subhash Mahajan ,  Fanyu Meng

Inventor： Chantal Arena ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow ,  Subhash Mahajan ,  Fanyu Meng

IPC: H01L21/02 ,  C30B25/02 ,  C30B29/40 ,  H01L29/20

CPC classification number: H01L21/02104 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L29/2003

Abstract: Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III-nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.

Abstract translation: 本发明的实施方案包括使用卤化物气相外延（HVPE）方法形成III族氮化物半导体结构的方法。 所述方法包括在非天然生长衬底的表面上形成连续的III族氮化物成核层，所述连续III族氮化物成核层隐藏非天然生长衬底的上表面。 形成连续的III族氮化物成核层可以包括形成III族氮化物层并热处理所述III族氮化物层。 方法还可以包括在连续的III族氮化物成核层上形成另外的III族氮化物层。