公开(公告)号：US5090584A

公开(公告)日：1992-02-25

申请号：US661217

申请日：1991-02-27

申请人： Clifford J. Roberts ,  Edward Batson ,  John H. Kurz

发明人： Clifford J. Roberts ,  Edward Batson ,  John H. Kurz

IPC分类号： B65D43/02 ,  B65D43/10 ,  B65D47/08

CPC分类号： B65D47/0847 ,  B65D43/0256 ,  B65D2101/0023 ,  B65D2251/1008 ,  B65D2543/00046 ,  B65D2543/00092 ,  B65D2543/00416 ,  B65D2543/00509 ,  B65D2543/00537 ,  B65D2543/00555 ,  B65D2543/00685 ,  B65D2543/00731 ,  B65D2543/00796

摘要： Disclosed is a disposable container lid for releasably mounting to a disposable container. The lid includes a central portion having a rim engaging means about the circumference of the central portion. An access strip is provided by a pair of tear impressions extending from the rim engaging means to a hinge means located in the central portion. By breaking the tear impressions, the access strip can be pivoted back from the hinge means to create an access opening through the lid. The central portion of the lid has a primary slit therein which is preferably arcuate. At each end of the primary slit there is a tab forming slit, each forming an inwardly directed retaining flap. A deflection flap is formed by the combination of the primary slit and the tab forming slits. To lock the access strip in a non-interfering position, it is folded back and pushed against the central portion of the lid thereby causing the deflection flap to deflect down toward the contents of the container. The small retaining flaps spring past the sides of the access strip and thus overlap such sides holding the access strip in abutting, face-to-face position with the deflection flap. The access strip can be released from the retaining flaps merely by directing upward force against the access strip causing the retaining flaps to deflect upward and spring past the access strip. The access strip can then be reseated on the rim of the cup if desired.

摘要翻译： 公开了一种用于可释放地安装到一次性容器的一次性容器盖。 所述盖包括具有围绕所述中心部分的圆周的边缘接合装置的中心部分。 通过从边缘接合装置延伸到位于中心部分中的铰链装置的一对撕裂印模提供通路条。 通过破坏撕裂印痕，接近条可以从铰链装置向后枢转以形成通过盖子的通道开口。 盖的中心部分具有其中的主狭缝，其优选地是弓形的。 在主狭缝的每个端部处都有一个凸片形成的狭缝，每个形成一个向内的保持挡板。 通过主狭缝和突片形成狭缝的组合形成偏转片。 为了将访问条锁定在非干扰位置，它被折回并且被推靠在盖的中心部分上，从而导致偏转翼片朝向容器的内容物偏转。 小的保持翼片弹簧穿过通路条的侧面，并且因此与保持接近条的侧面重叠，这些侧面与偏转翼片抵接，面对面地位置。 只有通过将向上的力引导到接近条带上，才能使保持翼片从保持翼片释放，导致保持翼片向上偏转并弹簧穿过接近条带。 如果需要，接入条可以重新安装在杯的边缘上。

公开(公告)号：US06590750B2

公开(公告)日：2003-07-08

申请号：US09021352

申请日：1998-02-10

申请人： David William Abraham ,  Philip Edward Batson ,  John Slonczewski ,  Philip Louis Trouilloud ,  William Joseph Gallagher ,  Stuart Parkin

发明人： David William Abraham ,  Philip Edward Batson ,  John Slonczewski ,  Philip Louis Trouilloud ,  William Joseph Gallagher ,  Stuart Parkin

IPC分类号： G11B539

CPC分类号： H01L27/224 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/3996 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/325 ,  H01L43/08 ,  H01L43/12

摘要： Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory (“MRAM”) arrays, which employ giant magnetoresistive (“GMR”) cells, or magnetic tunnel junction (“MTJ”) cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.

公开(公告)号：US06452764B1

公开(公告)日：2002-09-17

申请号：US09688732

申请日：2000-10-16

申请人： David William Abraham ,  Philip Edward Batson ,  William Joseph Gallagher ,  Stuart Parkin ,  John Slonczewski ,  Philip Louis Trouilloud

发明人： David William Abraham ,  Philip Edward Batson ,  William Joseph Gallagher ,  Stuart Parkin ,  John Slonczewski ,  Philip Louis Trouilloud

IPC分类号： G11B539

CPC分类号： H01L27/224 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/3996 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/325 ,  H01L43/08 ,  H01L43/12

摘要： Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory (“MRAM”) arrays, which employ giant magnetoresistive (“GMR”) cells, or magnetic tunnel junction (“MTJ”) cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.

摘要翻译： 公开了磁阻器件，其包括可以施加至少两个磁状态的可变磁区域。 在与器件进行磁阻电相互作用时，可以感测可变磁区的磁状态和相邻参考磁场的相对取向，从而提供二进制数据存储能力。 本发明将电相互作用仅限于可变磁性区域的优选部分，例如可以可靠地预测两个磁状态基本上均匀且彼此相反的部分。 公开了用于限制与可变磁性区域的该优选部分的电相互作用的结构，并且包括较小的相互作用区域，以及设置在可变磁性区域附近的绝缘和导电的相互作用区域的交替区域。 本发明的原理可以应用于在位线和字线的交点处采用巨磁阻（“GMR”）单元或磁隧道结（“MTJ”）单元的磁随机存取存储器（“MRAM”）阵列 ，还包括具有用于访问磁数据存储介质上的数据的访问元件的诸如磁数据存储设备的磁传感器。