公开(公告)号：US08450210B1

公开(公告)日：2013-05-28

申请号：US13218283

申请日：2011-08-25

Applicant: Evan E. Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven T. Mayer

Inventor： Evan E. Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven T. Mayer

IPC: H01L21/445 ,  C25D17/28

CPC classification number: C25D17/001 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/76877 ,  Y10T29/41

Abstract: Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.

Abstract translation: 提供了顺序处理半导体晶片的方法和装置。 顺序过程采用多工位处理模块，其中特别包含的晶片工艺被分为子工艺，每个子工艺被优化用于增加晶圆到晶片的均匀性，结果质量和整个晶片生产量。 在一个示例中，铜电镀模块包括用于润湿，起始，种子层修复，填充，覆盖层，回收和冲洗的分离站。

公开(公告)号：US07189647B2

公开(公告)日：2007-03-13

申请号：US10693223

申请日：2003-10-24

Applicant: Evan E. Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven T. Mayer

Inventor： Evan E. Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven T. Mayer

IPC: H01L21/44

CPC classification number: C25D17/001 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/76877 ,  Y10T29/41

Abstract: Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.

Abstract translation: 提供了顺序处理半导体晶片的方法和装置。 顺序过程采用多工位处理模块，其中特别包含的晶片工艺被分为子工艺，每个子工艺被优化用于增加晶圆到晶片的均匀性，结果质量和整个晶片生产量。 在一个示例中，铜电镀模块包括用于润湿，起始，种子层修复，填充，覆盖层，回收和冲洗的分离站。

公开(公告)号：US08026174B1

公开(公告)日：2011-09-27

申请号：US12496120

申请日：2009-07-01

Applicant: Evan E. Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven T. Mayer

Inventor： Evan E. Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven T. Mayer

IPC: H01L21/445 ,  C25D17/28

CPC classification number: C25D17/001 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/76877 ,  Y10T29/41

Abstract: Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.

Abstract translation: 提供了顺序处理半导体晶片的方法和装置。 顺序过程采用多工位处理模块，其中特别包含的晶片工艺被分为子工艺，每个子工艺被优化用于增加晶圆到晶片的均匀性，结果质量和整个晶片生产量。 在一个示例中，铜电镀模块包括用于润湿，起始，种子层修复，填充，覆盖层，回收和冲洗的分离站。

公开(公告)号：US20050282371A1

公开(公告)日：2005-12-22

申请号：US10693223

申请日：2003-10-24

Applicant: Evan Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven Mayer

Inventor： Evan Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven Mayer

IPC: C25D3/38 ,  C25D5/10 ,  H01L21/00 ,  H01L21/288 ,  H01L21/44 ,  H01L21/677

CPC classification number: C25D17/001 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/76877 ,  Y10T29/41

Abstract: Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.

Abstract translation: 提供了顺序处理半导体晶片的方法和装置。 顺序过程采用多工位处理模块，其中特别包含的晶片工艺被分为子工艺，每个子工艺被优化用于增加晶圆到晶片的均匀性，结果质量和整个晶片生产量。 在一个示例中，铜电镀模块包括用于润湿，起始，种子层修复，填充，覆盖层，回收和冲洗的分离站。