Abstract:
In an apparatus for measuring an optical characteristic of a sample, one object of the present invention is to provide an apparatus capable of measuring hemispherical total reflectance, hemispherical total transmittance, and light distribution, and to achieve a reduction in measurement time and an improvement in precision of the quantitative analysis of hemispherical total reflectance (transmittance). In a double ellipsoidal optical system which is an optical system in which one focal points of two ellipsoidal mirrors are positioned as a common focal point, and three focal points are aligned in a straight line, the double ellipsoidal optical system is composed of a partial ellipsoidal mirror 2, such as a quarter ellipsoidal mirror, and a belt-shape ellipsoidal mirror 1. By disposing, on a position of a focal point of the partial ellipsoidal mirror, a hemispherical detection optical system having a hemispherical lens or a rotational parabolic mirror, light scattered by an object, reflected by the partial ellipsoidal mirror, and focused on the point is photographed by for example a CCD camera 6 via a hemispherical lens and a taper fiber 5 so as to measure an optical characteristic of the object.
Abstract:
An optical system for determining an optical constant by measuring the absolute reflectance and the absolute transmittance of a substance by using an incoming side beam switching mirror for selectively switching the direction of a light from a light source to first or second converged light reflecting units. The first and second converged light reflecting units project the light from the beam switching mirror so as to be converged in an intersecting manner at the position of a sample holder that can be positioned to present a sample fitting hole or a through hole for measuring the reflectance/transmittance by providing the light to an exit side beam switching mirror and detector.
Abstract:
A substrate in a parallelepiped plate form satisfies an interference condition when incident light has a wavelength (λ) fallen under the following (d: thickness, n: refractive index, θ: incident angle, N: integer). 2 nd 1 - ( sin θ / n ) 2 λ = N [ Equation 7 ] At this time, the light in a transmission spectrum is intensified to cause a fringe peak to appear, whereas the light in a reflection spectrum is weakened to provide a fringe valley. At around the wavelength (frequency), as the incident angle is increased, the transmittance nears zero while reflectance increases nearing 1. Increasing the thickness of the substrate by placing a thin film thereon is similar to the increase in the substrate thickness in [Equation 7], whereby the wavelength satisfying the interference condition shifts toward the longer wavelength (lower frequency) Due to the three effects, at a great incident angle, a ratio of an optical (transmission or reflection) spectrum of a system having a substrate and thin film to an optical spectrum of a substrate only becomes a spectrum having a structure wherein maximum and minimum values are adjacent to each other. By analyzing this relative transmission spectrum or relative reflection spectrum, a complex dielectric constant of the thin film can be determined.
Abstract:
In order to measure a complex dielectric constant of a thin film on a substrate, a method includes irradiating the thin film sample with light at a first incident angle so that the light undergoes multiple internal reflections within the thin film sample. The method also includes measuring light that has transmitted through or reflected on the thin film sample following the multiple internal reflections, and determining a complex dielectric constant of the thin film sample based upon a spectrum of the transmitted or reflected light that has undergone the multiple internal reflections.
Abstract:
In an optical system, first and second optical paths intersected with each other on a sample holder are set, wherein the first and second optical paths are formed so that light from a light source is projected to be converged on the intersection from an incoming side beam switching mirror that selectively switches a direction of the light via one of first and second converged light reflectors, first and second received light reflectors that projects the light to an exiting side beam switching mirror disposed on the first and second optical paths respectively, the exiting side beam switching mirror switches a direction of the light projected from one of the first and second received light reflectors, and intensity of light from the sample in case of face side incidence and back side incidence to the sample can be measured.
Abstract:
In an apparatus for measuring an optical characteristic of a sample, one object of the present invention is to provide an apparatus capable of measuring hemispherical total reflectance, hemispherical total transmittance, and light distribution, and to achieve a reduction in measurement time and an improvement in precision of the quantitative analysis of hemispherical total reflectance (transmittance). In a double ellipsoidal optical system which is an optical system in which one focal points of two ellipsoidal mirrors are positioned as a common focal point, and three focal points are aligned in a straight line, the double ellipsoidal optical system is composed of a partial ellipsoidal mirror 2, such as a quarter ellipsoidal mirror, and a belt-shape ellipsoidal mirror 1. By disposing, on a position of a focal point of the partial ellipsoidal mirror, a hemispherical detection optical system having a hemispherical lens or a rotational parabolic mirror, light scattered by an object, reflected by the partial ellipsoidal mirror, and focused on the point is photographed by for example a CCD camera 6 via a hemispherical lens and a taper fiber 5 so as to measure an optical characteristic of the object.