Method for producing a plurality of optoelectronic semiconductor chips
    2.
    发明授权
    Method for producing a plurality of optoelectronic semiconductor chips 有权
    多个光电子半导体芯片的制造方法

    公开(公告)号:US08916403B2

    公开(公告)日:2014-12-23

    申请号:US13580491

    申请日:2011-02-03

    摘要: A method for producing a plurality of optoelectronic semiconductor chips includes providing a carrier wafer having a first surface and a second surface opposite the first surface, wherein a plurality of individual component layer sequences spaced apart from one another in a lateral direction are applied on the first surface, the component layer sequences being separated from one another by separation trenches; introducing at least one crystal imperfection in at least one region of the carrier wafer which at least partly overlaps a separation trench in a vertical direction; singulating the carrier wafer along the at least one crystal imperfection into individual semiconductor chips.

    摘要翻译: 一种制造多个光电子半导体芯片的方法包括提供具有第一表面和与第一表面相对的第二表面的载体晶片,其中在横向上彼此间隔开的多个单独的部件层序列被施加在第一 表面,组分层序列通过分离沟槽彼此分离; 在载体晶片的至少一个区域中引入至少一个在垂直方向上至少部分地与分离沟槽重叠的晶体缺陷; 将载体晶片沿着至少一个晶体缺陷分离成单独的半导体芯片。

    METHOD FOR PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR CHIPS
    3.
    发明申请
    METHOD FOR PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR CHIPS 有权
    用于生产多光子半导体晶体管的方法

    公开(公告)号:US20130069086A1

    公开(公告)日:2013-03-21

    申请号:US13580491

    申请日:2011-02-03

    IPC分类号: H01L33/08

    摘要: A method for producing a plurality of optoelectronic semiconductor chips includes providing a carrier wafer having a first surface and a second surface opposite the first surface. wherein a plurality of individual component layer sequences spaced apart from one another in a lateral direction are applied on the first surface, the component layer sequences being separated from one another by separation trenches; introducing at least one crystal imperfection in at least one region of the carrier wafer which at least partly overlaps a separation trench in a vertical direction; singulating the carrier wafer along the at least one crystal imperfection into individual semiconductor.

    摘要翻译: 一种制造多个光电子半导体芯片的方法包括提供具有第一表面和与第一表面相对的第二表面的载体晶片。 其中在横向上彼此间隔开的多个单独组分层序列施加在第一表面上,组分层序列通过分离沟槽彼此分离; 在载体晶片的至少一个区域中引入至少一个在垂直方向上至少部分地与分离沟槽重叠的晶体缺陷; 将载体晶片沿着至少一个晶体缺陷分离成单个半导体。