公开(公告)号：US5399871A

公开(公告)日：1995-03-21

申请号：US243053

申请日：1994-05-16

申请人： Hiroyuki Ito ,  Jonathan England ,  Frederick Plumb ,  Ian Fotheringham

发明人： Hiroyuki Ito ,  Jonathan England ,  Frederick Plumb ,  Ian Fotheringham

IPC分类号： C23C14/48 ,  H01J37/02 ,  H01J37/20 ,  H01J37/317 ,  H01L21/265 ,  H05H1/00

CPC分类号： H01J37/026 ,  H01J2237/0045 ,  H01J2237/31701

摘要： A plasma flood system for use in the implantation of ions in a semiconductor substrate comprising a plasma and low energy electron source for developing a plasma containing low energy electrons for magnetic field enhanced transmission to a negatively biased, magnetic field assisted electron confinement tube and into an ion beam flowing axially through the tube to the semiconductor substrate for self regulating and neutralizing positive charges on the surface of the substrate without causing significant negative charging of the substrate.

摘要翻译： 一种用于在半导体衬底中注入离子的等离子体放电系统，包括用于开发含有低能电子的等离子体和低能电子源的等离子体和低能电子源，用于磁场强化传输到负偏置的磁场辅助电子限制管并进入 离子束轴向流过管至半导体衬底，用于自调节和中和衬底表面上的正电荷，而不会引起衬底的显着负电荷。

公开(公告)号：US4754200A

公开(公告)日：1988-06-28

申请号：US774110

申请日：1985-09-09

申请人： Frederick Plumb ,  Christopher Wright ,  Nicholas J. Bright ,  Derek Aitken ,  Bernard Harrison

发明人： Frederick Plumb ,  Christopher Wright ,  Nicholas J. Bright ,  Derek Aitken ,  Bernard Harrison

IPC分类号： H01L21/265 ,  H01J27/02 ,  H01J27/14 ,  H01J37/08 ,  H01J37/24 ,  H01J37/248 ,  H01J37/317 ,  H01J7/24 ,  H05B31/26

CPC分类号： H01J37/24 ,  H01J27/022 ,  H01J27/14 ,  H01J37/08 ,  H01J37/3171

摘要： A method for operating an ion source having a filament-cathode and an anode. The method includes supplying direct current electrical power between the anode and the filament-cathode characterized by substantially constant arc current there between and varying arc voltage on the filament-cathode. Direct current electrical power is also supplied across the filament-cathode. The value of the arc voltage is monitored and the magnitude of electrical power supplied to the filament-cathode is altered in response to detected changes in the arc voltage to return the arc voltage to substantially a preset reference value. The monitoring step and the altering step are carried out at regular preset intervals. The altering step includes deriving an filament power error signal as a prearranged function which includes the difference in values between the monitored arc voltage and the preset reference value multiplied by a predefined integral gain value. The altering step also includes altering the magnitude of electrical power supplied to the filament-cathode by the value of the filament power error signal.

摘要翻译： 一种用于操作具有丝 - 阴极和阳极的离子源的方法。 该方法包括在阳极和灯丝阴极之间提供直流电力，其特征在于其上的基本恒定的电弧电流和灯丝阴极之间的电弧电压变化。 直流电功率也在灯丝阴极上提供。 监测电弧电压的值，并且响应于检测到的电弧电压的变化而改变提供给灯丝 - 阴极的电力的大小，以将电弧电压恢复到基本上预设的参考值。 监视步骤和改变步骤以规定的预设间隔进行。 改变步骤包括导出灯丝功率误差信号作为预定功能，其包括监视的电弧电压和预设参考值之间的值之差乘以预定的积分增益值。 改变步骤还包括通过灯丝功率误差信号的值来改变提供给灯丝 - 阴极的电力的大小。

公开(公告)号：US4743767A

公开(公告)日：1988-05-10

申请号：US905719

申请日：1986-09-09

申请人： Frederick Plumb ,  Christopher Wright ,  Nicholas J. Bright ,  Derek Aitken ,  Bernard Harrison

发明人： Frederick Plumb ,  Christopher Wright ,  Nicholas J. Bright ,  Derek Aitken ,  Bernard Harrison

IPC分类号： H01J27/02 ,  H01J27/14 ,  H01J37/08 ,  H01J37/24 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J27/022 ,  H01J27/14 ,  H01J37/08 ,  H01J37/24

摘要： An ion implantation system includes a beam generating arrangement for generating an ion beam characterized by good beam stability and for directing the ion beam along a prearranged path. A beam stopping arrangement is disposed in the path of the beam for stopping and collecting the ions in the beam. A workpiece scanning arrangement is positioned upstream of the beam stopping arrangement for scanning a workpiece through the beam in a prearranged combined fast scan directional motion and a slow scan directional motion with the slow scan directional motion being characterized by an end of scan position in which the ion beam falls completely on the beam stopping arrangement. A dose measuring arrangement is coupled to the beam stopping arrangement and includes arrangements for measuring the ion beam current on the beam stop at the end of scan position of the workpiece scanning arrangement, for calculating the average ion beam current striking the workpiece during each slow scan directional motion as the average of two successive ion beam current measurements before and after the motion, and for calculating the ion dose delivered to the workpiece based on the calculated average ion beam current and know geometrical factors associated with the fast and slow scan motions.

摘要翻译： 离子注入系统包括用于产生特征在于良好光束稳定性并用于沿着预定路径引导离子束的离子束的光束产生装置。 光束停止装置设置在光束的路径中，用于停止和收集光束中的离子。 工件扫描装置位于光束停止装置的上游，用于以预先布置的组合快速扫描定向运动和慢速扫描定向运动扫描通过光束的工件，其中慢扫描定向运动的特征在于扫描位置的结束，其中 离子束完全落在光束停止装置上。 剂量测量装置耦合到光束停止装置，并且包括用于测量在工件扫描装置的扫描位置结束时在光束挡块上的离子束电流的装置，用于计算在每个慢扫描期间撞击工件的平均离子束电流 作为运动之前和之后的两个连续的离子束电流测量的平均值的方向运动，以及用于基于计算出的平均离子束电流和知道与快速和慢速扫描运动相关联的几何因素来计算递送到工件的离子剂量。

公开(公告)号：US4825087A

公开(公告)日：1989-04-25

申请号：US50586

申请日：1987-05-13

申请人： Anthony Renau ,  Stephen Moffatt ,  Frederick Plumb

发明人： Anthony Renau ,  Stephen Moffatt ,  Frederick Plumb

IPC分类号： C23C14/48 ,  H01J37/02 ,  H01J37/06 ,  H01J37/317 ,  H01L21/265 ,  G21K5/00

CPC分类号： H01J37/3171 ,  H01J37/026

摘要： A diode flood gun for introducing an amplified current of low energy electrons into an ion beam for neutralizing charge build up on a target such as a semiconductor wafer during irradiation by the beam. The low energy, amplified current is effected by introducing an inert gas into the flood gun.