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14 条记录 (耗时 0.026 秒)

    Systems and methods for ion source control in ion implanters
    1.
    发明授权
    Systems and methods for ion source control in ion implanters 失效
    离子注入机离子源控制的系统和方法

    公开(公告)号：US4754200A

    公开(公告)日：1988-06-28

    申请号：US774110

    申请日：1985-09-09

    申请人： Frederick Plumb ,  Christopher Wright ,  Nicholas J. Bright ,  Derek Aitken ,  Bernard Harrison

    发明人： Frederick Plumb ,  Christopher Wright ,  Nicholas J. Bright ,  Derek Aitken ,  Bernard Harrison

    IPC分类号： H01L21/265 ,  H01J27/02 ,  H01J27/14 ,  H01J37/08 ,  H01J37/24 ,  H01J37/248 ,  H01J37/317 ,  H01J7/24 ,  H05B31/26

    CPC分类号： H01J37/24 ,  H01J27/022 ,  H01J27/14 ,  H01J37/08 ,  H01J37/3171

    摘要： A method for operating an ion source having a filament-cathode and an anode. The method includes supplying direct current electrical power between the anode and the filament-cathode characterized by substantially constant arc current there between and varying arc voltage on the filament-cathode. Direct current electrical power is also supplied across the filament-cathode. The value of the arc voltage is monitored and the magnitude of electrical power supplied to the filament-cathode is altered in response to detected changes in the arc voltage to return the arc voltage to substantially a preset reference value. The monitoring step and the altering step are carried out at regular preset intervals. The altering step includes deriving an filament power error signal as a prearranged function which includes the difference in values between the monitored arc voltage and the preset reference value multiplied by a predefined integral gain value. The altering step also includes altering the magnitude of electrical power supplied to the filament-cathode by the value of the filament power error signal.

    摘要翻译： 一种用于操作具有丝 - 阴极和阳极的离子源的方法。 该方法包括在阳极和灯丝阴极之间提供直流电力，其特征在于其上的基本恒定的电弧电流和灯丝阴极之间的电弧电压变化。 直流电功率也在灯丝阴极上提供。 监测电弧电压的值，并且响应于检测到的电弧电压的变化而改变提供给灯丝 - 阴极的电力的大小，以将电弧电压恢复到基本上预设的参考值。 监视步骤和改变步骤以规定的预设间隔进行。 改变步骤包括导出灯丝功率误差信号作为预定功能，其包括监视的电弧电压和预设参考值之间的值之差乘以预定的积分增益值。 改变步骤还包括通过灯丝功率误差信号的值来改变提供给灯丝 - 阴极的电力的大小。

    Systems and methods for ion implantation
    2.
    发明授权
    Systems and methods for ion implantation 失效
    离子注入的系统和方法

    公开(公告)号：US4743767A

    公开(公告)日：1988-05-10

    申请号：US905719

    申请日：1986-09-09

    申请人： Frederick Plumb ,  Christopher Wright ,  Nicholas J. Bright ,  Derek Aitken ,  Bernard Harrison

    发明人： Frederick Plumb ,  Christopher Wright ,  Nicholas J. Bright ,  Derek Aitken ,  Bernard Harrison

    IPC分类号： H01J27/02 ,  H01J27/14 ,  H01J37/08 ,  H01J37/24 ,  H01J37/317

    CPC分类号： H01J37/3171 ,  H01J27/022 ,  H01J27/14 ,  H01J37/08 ,  H01J37/24

    摘要： An ion implantation system includes a beam generating arrangement for generating an ion beam characterized by good beam stability and for directing the ion beam along a prearranged path. A beam stopping arrangement is disposed in the path of the beam for stopping and collecting the ions in the beam. A workpiece scanning arrangement is positioned upstream of the beam stopping arrangement for scanning a workpiece through the beam in a prearranged combined fast scan directional motion and a slow scan directional motion with the slow scan directional motion being characterized by an end of scan position in which the ion beam falls completely on the beam stopping arrangement. A dose measuring arrangement is coupled to the beam stopping arrangement and includes arrangements for measuring the ion beam current on the beam stop at the end of scan position of the workpiece scanning arrangement, for calculating the average ion beam current striking the workpiece during each slow scan directional motion as the average of two successive ion beam current measurements before and after the motion, and for calculating the ion dose delivered to the workpiece based on the calculated average ion beam current and know geometrical factors associated with the fast and slow scan motions.

    摘要翻译： 离子注入系统包括用于产生特征在于良好光束稳定性并用于沿着预定路径引导离子束的离子束的光束产生装置。 光束停止装置设置在光束的路径中，用于停止和收集光束中的离子。 工件扫描装置位于光束停止装置的上游，用于以预先布置的组合快速扫描定向运动和慢速扫描定向运动扫描通过光束的工件，其中慢扫描定向运动的特征在于扫描位置的结束，其中 离子束完全落在光束停止装置上。 剂量测量装置耦合到光束停止装置，并且包括用于测量在工件扫描装置的扫描位置结束时在光束挡块上的离子束电流的装置，用于计算在每个慢扫描期间撞击工件的平均离子束电流 作为运动之前和之后的两个连续的离子束电流测量的平均值的方向运动，以及用于基于计算出的平均离子束电流和知道与快速和慢速扫描运动相关联的几何因素来计算递送到工件的离子剂量。

    Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
    3.
    发明授权
    Multi-directional scanning of movable member and ion beam monitoring arrangement therefor 有权
    可移动构件的多方向扫描和离子束监测装置

    公开(公告)号：US06956223B2

    公开(公告)日：2005-10-18

    申请号：US10119290

    申请日：2002-04-10

    申请人： Theodore H. Smick ,  Frank D. Roberts ,  Marvin Farley ,  Geoffrey Ryding ,  Takao Sakase ,  Adrian Murrell ,  Peter Edwards ,  Bernard Harrison

    发明人： Theodore H. Smick ,  Frank D. Roberts ,  Marvin Farley ,  Geoffrey Ryding ,  Takao Sakase ,  Adrian Murrell ,  Peter Edwards ,  Bernard Harrison

    IPC分类号： H01J37/04 ,  H01J37/18 ,  H01J37/317 ,  H01L21/265 ,  H01L21/68 ,  B05C5/00

    CPC分类号： H01J37/20 ,  H01J37/18 ,  H01J37/3171 ,  H01J2237/20 ,  H01J2237/2006 ,  H01J2237/2007 ,  H01J2237/20221 ,  H01J2237/20228 ,  H01J2237/20278 ,  H01L21/682 ,  H01L21/6835

    摘要： Semiconductor processing apparatus is disclosed which provides for movement of a scanning arm 60 of a substrate or wafer holder 180, in at least two generally orthogonal directions (so-called X-Y scanning). Scanning in a first direction is longitudinally through an aperture 55 in a vacuum chamber wall. The arm 60 is reciprocated by one or more linear motors 90A, 90B. The arm 60 is supported relative to a slide 100 using gimballed air bearings so as to provide cantilever support for the arm relative to the slide 100. A compliant feedthrough 130 into the vacuum chamber for the arm 60 then acts as a vacuum seal and guide but does not itself need to provide bearing support. A Faraday 450 is attached to the arm 60 adjacent the substrate holder 180 to allow beam profiling to be carried out both prior to and during implant. The Faraday 450 can instead or additionally be mounted adjacent the rear of the substrate holder or at 90° to it to allow beam profiling to be carried out prior to implant, with the substrate support reversed or horizontal and out of the beam line.

    摘要翻译： 公开了半导体处理装置，其提供基板或晶片保持器180的扫描臂60在至少两个大致正交的方向（所谓的X-Y扫描）上的移动。 沿着第一方向进行的扫描纵向地穿过真空室壁中的孔口55。 臂60由一个或多个线性电动机90A，90B往复运动。臂60相对于滑块100被支撑，使用支撑的空气轴承，以便相对于滑块100为臂提供悬臂支撑。 进入用于臂60的真空室中的柔性馈通件130然后用作真空密封和引导件，但本身不需要提供轴承支撑件。 法拉第450附接到靠近基板保持器180的臂60，以允许在植入之前和期间执行光束轮廓。 法拉第450可以替代地或附加地安装在靠近衬底保持器的后部或与其相邻的90°处，以允许在植入之前执行光束轮廓，其中衬底支撑件反向或水平并且离开光束线。