公开(公告)号：US08076170B2

公开(公告)日：2011-12-13

申请号：US12944268

申请日：2010-11-11

申请人： Frederick T. Brady

发明人： Frederick T. Brady

IPC分类号： H01L21/00

CPC分类号： H01L27/14632 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

摘要： A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device.

摘要翻译： 背面照明图像传感器包括实现像素阵列的多个感光元件的传感器层，邻近传感器层的背面的氧化物层以及与传感器层的前侧表面相邻的至少一个电介质层。 传感器层还包括形成在传感器层的背面中的多个背面沟槽，并被布置成在各对感光元件之间提供隔离。 背面沟槽具有形成在传感器层中的相应的背面场隔离注入区域，并且所得结构提供相邻光敏元件之间的载流子复合和串扰的减小。 图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

公开(公告)号：US20100182496A1

公开(公告)日：2010-07-22

申请号：US12616995

申请日：2009-11-12

申请人： Frederick T. Brady ,  Robert M. Guidash ,  J. Kelly Lee ,  Marek W. Kowarz ,  Robert Andosca

发明人： Frederick T. Brady ,  Robert M. Guidash ,  J. Kelly Lee ,  Marek W. Kowarz ,  Robert Andosca

IPC分类号： H04N5/235 ,  G02B26/02

CPC分类号： G02B26/02 ,  G02B26/0841

摘要： A microshutter array has a frame having a light transmissive portion. Linear microshutter elements extend across the light transmissive portion and in parallel to each other. Each microshutter element has a flat blade extended in a length direction and first and second torsion arms extending outwards from each side of the blade in the length direction, the blade extending across the light transmissive portion. A control circuit provides a separately-controlled and independent voltage that is applied to each of the linear microshutter elements. A controller sets the respective voltages applied to each of the linear microshutter elements.

摘要翻译： 微型扫描器阵列具有具有透光部分的框架。 线性微型振荡器元件延伸穿过光透射部分并且彼此平行。 每个微型振动元件具有在长度方向上延伸的平坦叶片，并且第一和第二扭转臂在长度方向上从叶片的每侧向外延伸，叶片延伸穿过透光部分。 控制电路提供分别控制和独立的电压，其施加到每个线性微型振荡器元件。 控制器设置施加到每个线性微动开关元件的相应电压。

公开(公告)号：US20100148295A1

公开(公告)日：2010-06-17

申请号：US12565182

申请日：2009-09-23

申请人： Frederick T. Brady ,  Robert M. Guidash

发明人： Frederick T. Brady ,  Robert M. Guidash

IPC分类号： H01L31/0352 ,  H01L29/00 ,  H01L31/02 ,  H01L21/76

CPC分类号： H01L27/14601 ,  H01L21/304 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/14689

摘要： A semiconductor wafer includes one or more back-illuminated image sensors each formed in a portion of the semiconductor wafer. One or more thinning etch stops are formed in other portions of the semiconductor wafer.

摘要翻译： 半导体晶片包括各自形成在半导体晶片的一部分中的一个或多个背照式图像传感器。 在半导体晶片的其它部分中形成一个或多个变薄蚀刻停止。

公开(公告)号：US20100006970A1

公开(公告)日：2010-01-14

申请号：US12169723

申请日：2008-07-09

申请人： Frederick T. Brady ,  John P. McCarten

发明人： Frederick T. Brady ,  John P. McCarten

IPC分类号： H01L31/101 ,  H01L31/18

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/14601 ,  H01L27/1464 ,  H01L27/14683

摘要： A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

摘要翻译： 背面照明图像传感器包括实现像素阵列的多个感光元件的传感器层和邻近传感器层的背面的氧化物层。 传感器层包括种子层和形成在种子层上的外延层，种子层具有横截面掺杂分布，其中指定的掺杂剂基本上限制在传感器层的像素阵列区域。 掺杂分布有利地减少了在传感器层和氧化物层之间的界面处产生的暗电流。 图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

公开(公告)号：US5358879A

公开(公告)日：1994-10-25

申请号：US54994

申请日：1993-04-30

申请人： Frederick T. Brady ,  Charles P. Breiten ,  Nadium F. Haddad ,  William G. Houston ,  Oliver S. Spencer ,  Steven J. Wright

发明人： Frederick T. Brady ,  Charles P. Breiten ,  Nadium F. Haddad ,  William G. Houston ,  Oliver S. Spencer ,  Steven J. Wright

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L21/266

CPC分类号： H01L29/6659 ,  H01L21/28247 ,  H01L29/4983 ,  H01L29/6656 ,  H01L29/7836 ,  Y10S148/114

摘要： A process to form poly sidegate LDD structures on buried channel MOSFETs is described. A polysilicon spacer is formed on the gate after source/drain processing. The spacer is later shorted to the main gate by implantation of neutral impurities. The process is particularly suited for SOI technology.

摘要翻译： 描述了在掩埋沟道MOSFET上形成多边栅极LDD结构的工艺。 在源/漏处理之后，在栅极上形成多晶硅间隔物。 间隔物随后通过植入中性杂质而短路到主栅极。 该工艺特别适用于SOI技术。

公开(公告)号：US20110042770A1

公开(公告)日：2011-02-24

申请号：US12940133

申请日：2010-11-05

申请人： Frederick T. Brady

发明人： Frederick T. Brady

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14636 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

摘要翻译： 背面照明图像传感器包括传感器层，其具有多个像素阵列的感光元件，邻近传感器层的背面的氧化物层以及与传感器层的前侧表面相邻的至少一个电介质层。 在氧化物层的背面形成有滤色器阵列，在覆盖滤色器阵列的氧化物层的背面附着有透明盖。 再分布金属导体通过介电层中的相应开口与相应的接合焊盘导体电接触。 再分布钝化层形成在再分布金属导体上，并且接触金属化通过再分布钝化层中的相应开口与相应的再分布金属导体中的相应的一个电接触。 图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

公开(公告)号：US20100006908A1

公开(公告)日：2010-01-14

申请号：US12169810

申请日：2008-07-09

申请人： Frederick T. Brady

发明人： Frederick T. Brady

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14632 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

摘要： A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device.

摘要翻译： 背面照明图像传感器包括实现像素阵列的多个感光元件的传感器层，邻近传感器层的背面的氧化物层以及与传感器层的前侧表面相邻的至少一个电介质层。 传感器层还包括形成在传感器层的背面中的多个背面沟槽，并被布置成在各对感光元件之间提供隔离。 背面沟槽具有形成在传感器层中的相应的背面场隔离注入区域，并且所得结构提供相邻光敏元件之间的载流子复合和串扰的减小。 图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

公开(公告)号：US20080265295A1

公开(公告)日：2008-10-30

申请号：US11741259

申请日：2007-04-27

申请人： Frederick T. Brady

发明人： Frederick T. Brady

IPC分类号： H01L31/042 ,  H01L31/18

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14689

摘要： A method and structure for providing a high energy implant in only the red pixel location of a CMOS image sensor. The implant increases the photon collection depth for the red pixels, which in turn increases the quantum efficiency for the red pixels. In one embodiment, a CMOS image sensor is formed on an p-type substrate and the high energy implant is a p-type implant that creates a p-type ground contact under the red pixel, thus reducing dark non-uniformity effects. In another embodiment, a CMOS image sensor is formed on an n-type substrate and a high energy p-type implant creates a p-type region under only the red pixel to increase photon collection depth, which in turn increases the quantum efficiency for the red pixels.

摘要翻译： 一种仅在CMOS图像传感器的红色像素位置提供高能量注入的方法和结构。 植入物增加了红色像素的光子收集深度，这进而提高了红色像素的量子效率。 在一个实施例中，在p型衬底上形成CMOS图像传感器，并且高能量注入是在红色像素之下产生p型接地触点的p型注入，从而减少黑暗的不均匀效应。 在另一个实施例中，CMOS图像传感器形成在n型衬底上，高能p型注入器仅在红色像素下产生p型区域，以增加光子收集深度，这进而提高了量子效率 红色像素。

公开(公告)号：US06638832B2

公开(公告)日：2003-10-28

申请号：US09741028

申请日：2000-12-21

申请人： Frederick T. Brady ,  Jon Maimon

发明人： Frederick T. Brady ,  Jon Maimon

IPC分类号： H01L2176

CPC分类号： H01L21/26506 ,  H01L21/76237 ,  H01L21/823412 ,  H01L21/823481

摘要： Neutral conductivity ions, preferably germanium, are implanted through the oxide of a metal oxide semiconductor after isolation formation to provide a nearly constant threshold voltage for transistor operation independent of transistor channel width as device geometries are scaled down in size. The present invention sets forth a method for fabricating a metal oxide semiconductor (MOS) structure that controls threshold voltage Vt in the structure, the method including generating an isolation region of the semiconductor structure on a major surface of a silicon substrate, growing a thin oxide on the major surface of the semiconductor structure, implanting a large diameter neutral conductivity type ion into the major surface of the semiconductor structure through the thin oxide, annealing the semiconductor structure having the neutral conductivity ion implanted therein, and processing the semiconductor structure to create MOS devices having a near constant threshold voltage over a range of device channel widths.

公开(公告)号：US08194178B2

公开(公告)日：2012-06-05

申请号：US12616995

申请日：2009-11-12

申请人： Frederick T. Brady ,  Robert M. Guidash ,  J. Kelly Lee ,  Marek W. Kowarz ,  Robert Andosca

发明人： Frederick T. Brady ,  Robert M. Guidash ,  J. Kelly Lee ,  Marek W. Kowarz ,  Robert Andosca

IPC分类号： H04N5/235 ,  G02B7/00 ,  G02B26/06 ,  G02B26/10 ,  G02B26/12

CPC分类号： G02B26/02 ,  G02B26/0841

摘要： A microshutter array has a frame having a light transmissive portion. Linear microshutter elements extend across the light transmissive portion and in parallel to each other. Each microshutter element has a flat blade extended in a length direction and first and second torsion arms extending outwards from each side of the blade in the length direction, the blade extending across the light transmissive portion. A control circuit provides a separately-controlled and independent voltage that is applied to each of the linear microshutter elements. A controller sets the respective voltages applied to each of the linear microshutter elements.

摘要翻译： 微型扫描器阵列具有具有透光部分的框架。 线性微型振荡器元件延伸穿过光透射部分并且彼此平行。 每个微型振动元件具有在长度方向上延伸的平坦叶片，并且第一和第二扭转臂在长度方向上从叶片的每侧向外延伸，叶片延伸穿过透光部分。 控制电路提供分别控制和独立的电压，其施加到每个线性微型振荡器元件。 控制器设置施加到每个线性微动开关元件的相应电压。