DISCONTINUOUS ISLANDED FERROMAGNETIC RECORDING FILM WITH PERPENDICULAR MAGNETIC ANISOTROPY
    2.
    发明申请
    DISCONTINUOUS ISLANDED FERROMAGNETIC RECORDING FILM WITH PERPENDICULAR MAGNETIC ANISOTROPY 审中-公开
    不连续的非均匀磁共振记录膜

    公开(公告)号:US20110171494A1

    公开(公告)日:2011-07-14

    申请号:US12753904

    申请日:2010-04-05

    摘要: The present invention discloses a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy. The discontinuous islanded ferromagnetic recording film includes a substrate and a ferromagnetic layer. The ferromagnetic layer is formed on the substrate and annealed by a high-temperature vacuum annealing process. After annealing, a surface energy difference existed between the ferromagnetic layer and the substrate turns the ferromagnetic layer into well-separated and discontinuous islanded ferromagnetic particles. Each islanded ferromagnetic particle is thought of a single magnetic domain, which is beneficial to achieve a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy.

    摘要翻译: 本发明公开了具有垂直磁各向异性的不连续岛状铁磁记录膜。 不连续的岛状铁磁记录膜包括基板和铁磁层。 铁基层形成在基板上,并通过高温真空退火工艺退火。 在退火之后,铁磁层之间存在表面能量差,并且基板将铁磁层转变为分离好的和不连续的岛状铁磁性颗粒。 每个岛状铁磁颗粒被认为是单个磁畴,这有利于实现具有垂直磁各向异性的不连续岛状铁磁记录膜。

    Single layer CoTbAg thin films for heat assisted magnetic recording
    7.
    发明申请
    Single layer CoTbAg thin films for heat assisted magnetic recording 审中-公开
    单层CoTbAg薄膜,用于热辅助磁记录

    公开(公告)号:US20050016836A1

    公开(公告)日:2005-01-27

    申请号:US10891763

    申请日:2004-07-14

    CPC分类号: G11B5/851 C23C14/185

    摘要: The present invention includes that using single layer amorphous CoTbAg thin films as heat assisted magnetic recording (HAMR) media, and the method for producing these CoTbAg amorphous thin films. Co69.48−XTb30.52AgX films with x=0˜25.68 at. % are fabricated by DC or RF magnetron sputtering and rotating substrate. Two kinds of targets can be used. One is the CoTbAg alloy target. The other one consists of Co, Tb and Ag three targets. The CoTbAg film is prepared by co-sputtering of Co, Tb and Ag targets. The film composition can be controlled by changing the sputtering power density of each target. CoTbAg films are deposited on glass substrate or nature-oxide silicon wafer at room temperature. These films have high saturation magnetization and high perpendicular coercivity. They have amorphous structure and can be applied to HAMR media.

    摘要翻译: 本发明包括使用单层无定形CoTbAg薄膜作为热辅助磁记录(HAMR)介质,以及制造这些CoTbAg非晶薄膜的方法。 Co69.48-XTb30.52AgX膜,x = 0〜25.68 at。 %由DC或RF磁控溅射和旋转衬底制造。 可以使用两种目标。 一种是CoTbAg合金靶。 另一个由Co,Tb和Ag三个目标组成。 CoTbAg膜是通过共溅射Co,Tb和Ag靶来制备的。 可以通过改变每个靶的溅射功率密度来控制膜组成。 CoTbAg膜在室温下沉积在玻璃衬底或自然氧化硅晶片上。 这些膜具有高饱和磁化强度和高垂直矫顽力。 它们具有非晶结构,可应用于HAMR介质。

    METHOD FOR FORMING AN ORDERED ALLOY
    8.
    发明申请
    METHOD FOR FORMING AN ORDERED ALLOY 审中-公开
    形成订购合金的方法

    公开(公告)号:US20110070373A1

    公开(公告)日:2011-03-24

    申请号:US12700953

    申请日:2010-02-05

    IPC分类号: B05D3/02 C23C14/34

    摘要: A method for forming an ordered alloy includes: (a) forming a layer of a first metal with a layer thickness of less than 0.3 nm over a substrate; (b) forming a layer of a second metal with a layer thickness of less than 0.3 nm on the layer of the first metal under an elevated temperature sufficient to cause interdiffusion of atoms of the first and second metals between the layer of the first metal and the layer of the second metal so as to form the ordered alloy; and (c) repeating steps (a) and (b) until a predetermined layer thickness of the ordered alloy is achieved.

    摘要翻译: 形成有序合金的方法包括:(a)在衬底上形成层厚度小于0.3nm的第一金属层; (b)在高温下在第一金属层上形成厚度小于0.3nm的第二金属层,足以使第一和第二金属的原子在第一金属和第 第二金属层以形成有序合金; 和(c)重复步骤(a)和(b),直到实现有序合金的预定层厚。