High throughput high-yield vacuum deposition system
    2.
    发明授权
    High throughput high-yield vacuum deposition system 失效
    高通量高产真空沉积系统

    公开(公告)号:US07195797B2

    公开(公告)日:2007-03-27

    申请号:US09902250

    申请日:2001-07-10

    IPC分类号: C23C16/00

    摘要: A vacuum deposition system has been designed to produce thin film based demultiplexers with high throughput and production yields of greater than 25% for use in Dense Wavelength Division Multiplexer (DWDM) systems. The system employs a dense array of high yield fixtures and an ion assisted movable dual electron beam evaporation system. The fixture array increases acceptable yields of narrow band pass filters to 25–75% compared to less than 5% in conventional coating systems used for DWDM. The movable e-beam system allows critical symmetry to be maintained while eliminating significant delays resulting from deposition of two materials from a single electron gun. The vacuum deposition system will enable production of more than 15,000 50–200 GHZ filters which meet specifications for DWDM demultiplexers every 48 hours.

    摘要翻译: 已经设计了一种真空沉积系统,用于生产基于薄膜的解复用器,其高通量和大于25%的生产率用于密集波分复用器(DWDM)系统。 该系统采用密集阵列的高产量夹具和离子辅助可移动双电子束蒸发系统。 夹具阵列将窄带通滤波器的可接受产量提高到25-75%,而用于DWDM的常规涂层系统中的夹具数小于5%。 可移动电子束系统允许保持临界对称性,同时消除由单个电子枪沉积两种材料引起的显着延迟。 真空沉积系统将能够生产超过15,000个50-200 GHZ过滤器,每48小时满足DWDM解复用器的规格要求。

    Atomic layer controlled optical filter design for next generation dense wavelength division multiplexer
    3.
    发明授权
    Atomic layer controlled optical filter design for next generation dense wavelength division multiplexer 失效
    用于下一代密集波分复用器的原子层控制滤光器设计

    公开(公告)号:US06930835B2

    公开(公告)日:2005-08-16

    申请号:US09865153

    申请日:2001-05-24

    IPC分类号: C23C14/54 C23C14/58 G02B1/10

    摘要: An optical filter using alternating layers of materials with “low” and “high” indices of refraction and deposited with atomic layer control has been developed. The multilayered thin film filter uses, but is not limited to, alternating amorphous layers of atomically controlled Si (n=3.56) as the high index material and diamond-like carbon (DLC, n=2.0) as the low index material. The Si layers are grown with a self-limiting pulsed molecular beam deposition process which results in layer-by-layer growth and thickness control to within one atomic layer. The DLC layers are produced using an ion-based process and made atomically smooth using a modified Chemical Reactive-Ion Surface Planarization (CRISP) process. Intrinsic stress is monitored using an in-situ cantilever-based intrinsic stress optical monitor and adjusted during filter fabrication by deposition parameter modification. The resulting filter has sufficient individual layer thickness control and surface roughness to enable ˜12.5 GHz filters for next generation multiplexers and demultiplexers with more than 1000 channels in the wavelength range 1.31-1.62 μm.

    摘要翻译: 已经开发了使用具有“低”和“高”折射率并且沉积有原子层控制的材料的交替层的滤光器。 多层薄膜滤光器使用但不限于作为低折射率材料的高折射率材料和类金刚石碳(DLC,n = 2.0)的原子控制Si(n = 3.56)的交替非晶层。 Si层通过自限制的脉冲分子束沉积工艺生长,这导致逐层生长和厚度控制在一个原子层内。 使用基于离子的工艺制备DLC层,并使用改进的化学反应离子表面平面化(CRISP)方法使其原子平滑。 使用基于原位悬臂的固有应力光学监测器监测内在应力,并通过沉积参数修改在过滤器制造期间进行调整。 所得到的滤波器具有足够的单独层厚度控制和表面粗糙度,以便在波长1.31-1.62μm的范围内为具有多于1000个通道的下一代多路复用器和解复用器提供〜12.5GHz滤波器。

    Diamond-like carbon heat sink for reflective optical switches and devices
    4.
    发明授权
    Diamond-like carbon heat sink for reflective optical switches and devices 失效
    用于反射式光开关和器件的类金刚石碳散热器

    公开(公告)号:US06788841B2

    公开(公告)日:2004-09-07

    申请号:US10050262

    申请日:2002-01-16

    IPC分类号: G02B635

    摘要: A reflective optical switch device includes a diamond-like carbon (DLC) heat sink layer disposed adjacent a reflective layer. In one embodiment, the reflective optical switch is a MEMS mirror having a substrate layer, a DLC heat sink layer, which is vapor deposited on the substrate layer, and a reflective layer deposited over the heat sink layer. In another embodiment, the optical switch device is a reflective LC-based switch having a first substrate, a DLC heat sink layer deposited over the first substrate, and an LC medium provided between a reflective electrode layer and a transmissive electrode layer. The DLC heat sink enables rapid dissipation and distribution of laser light induced heat away from the local target area of the reflective surface, thereby reducing deformation of the reflective surface and/or alteration of the optical properties within the local region to enhance performance.

    摘要翻译: 反射式光开关装置包括邻近反射层设置的类金刚石碳(DLC)散热层。 在一个实施例中,反射型光开关是具有衬底层的MEMS反射镜,沉积在衬底层上的蒸镀层,DLC散热层以及沉积在散热层上的反射层。 在另一个实施例中,光开关装置是具有第一衬底,沉积在第一衬底上的DLC散热层和反射电极层和透射电极层之间的LC介质的反射基于LC的开关。 DLC散热器能够快速消散和分布激光,使其远离反射表面的局部目标区域,从而减少反射表面的变形和/或改变局部区域内的光学性质,从而提高性能。

    Electron beam evaporation assembly for high uniform thin film
    5.
    发明授权
    Electron beam evaporation assembly for high uniform thin film 失效
    电子束蒸发组件用于高均匀薄膜

    公开(公告)号:US06244212B1

    公开(公告)日:2001-06-12

    申请号:US09475936

    申请日:1999-12-30

    IPC分类号: C23C1600

    CPC分类号: C23C14/30 C23C14/56

    摘要: An apparatus and method for improving the performance of a vacuum coating system includes a vacuum chamber enclosing a track. The track is substantially rectangular having a top surface and a bottom surface. A pair of legs are attached to the bottom surface of the track and support the track within the vacuum chamber. The legs have a top edge engaging the bottom surface of the track and a bottom edge secured to a bottom section of the vacuum chamber. The legs extend longitudinally along the bottom surface of the track. A rail is mounted on the top surface of the track and extends along a longitudinal axis of the track. A substantially planar platter having a top face and a bottom face is supported on top of the rail. The platter is adapted to slide from side to side along the rail across the length of the track. A stage carrying an electron beam evaporator is mounted on the top face of the platter. As such, the electron beam evaporator slides with the platter across the length of the track. A linear substrate feed assembly is disposed above the stage for feeding a substrate through the vacuum chamber. As the substrate travels through the vacuum chamber, it is coated by a deposition material transmitted from the electron beam evaporator.

    摘要翻译: 用于改善真空涂覆系统的性能的装置和方法包括包围轨道的真空室。 轨道基本上是具有顶表面和底表面的矩形。 一对腿连接到轨道的底表面并且支撑真空室内的轨道。 腿部具有接合轨道的底表面的顶部边缘和固定到真空室的底部部分的底部边缘。 腿部沿轨道的底面纵向延伸。 导轨安装在轨道的顶表面上并且沿着轨道的纵向轴线延伸。 具有顶面和底面的基本上平面的盘片被支撑在轨道的顶部上。 盘片适于沿着轨道沿着轨道的长度从一侧到另一侧滑动。 携带电子束蒸发器的台架安装在盘片的顶面上。 因此,电子束蒸发器在盘的整个长度上与盘片一起滑动。 线性衬底馈送组件设置在平台上方,用于将衬底馈送通过真空室。 当基板行进通过真空室时,其被从电子束蒸发器传输的沉积材料涂覆。

    Electron beam evaporation of transparent indium tin oxide
    6.
    发明授权
    Electron beam evaporation of transparent indium tin oxide 失效
    透明氧化铟锡的电子束蒸发

    公开(公告)号:US6153271A

    公开(公告)日:2000-11-28

    申请号:US476752

    申请日:1999-12-30

    申请人: Gerald T. Mearini

    发明人: Gerald T. Mearini

    摘要: A process for depositing a transparent coating of indium tin oxide on a substrate comprising providing said substrate in a partial vacuum environment and conducting electron beam evaporation of tin oxide doped indium oxide granules while operating an ion source providing oxygen adjacent said substrate until a coating of indium tin oxide is deposited on at least a portion of said substrate.

    摘要翻译: 一种用于在衬底上沉积氧化铟锡的透明涂层的方法,包括在部分真空环境中提供所述衬底并且在操作提供与所述衬底相邻的氧的离子源的同时进行电子束蒸发掺杂氧化锡的氧化铟颗粒,直到铟的涂层 氧化锡沉积在所述衬底的至少一部分上。

    GUITAR PICK HAVING CVD DIAMOND OR DLC COATING
    7.
    发明申请
    GUITAR PICK HAVING CVD DIAMOND OR DLC COATING 审中-公开
    GUITAR PICK拥有CVD金刚石或DLC涂层

    公开(公告)号:US20160180824A1

    公开(公告)日:2016-06-23

    申请号:US14974260

    申请日:2015-12-18

    申请人: Gerald T. Mearini

    发明人: Gerald T. Mearini

    IPC分类号: G10D3/16 C23C16/44 C23C16/26

    CPC分类号: G10D3/163 C23C16/26 C23C16/27

    摘要: A guitar pick comprises a substrate layer and a diamond film layer or coating. The diamond film layer is composed of chemical vapor deposited diamond, or diamond-like carbon. The diamond film coating or layer is applied to the substrate in one or more layers under intense heat and low pressure. The substrate layer can be composed of at least one of steel, stainless steel, molybdenum, titanium, tungsten, copper, aluminum, tantalum and alloys thereof, silicon, silicon carbide, tungsten carbide, quartz, or sapphire. Coating of the diamond film layer may be achieved by plasma enhanced chemical vapor deposition (PECVD), ion beam deposition (IBD), plasma-assisted deposition, cathodic arc deposition, hot filament chemical vapor deposition (HFCVD), or microwave plasma-assisted chemical vapor deposition (MPCVD).

    摘要翻译: 吉他拾音器包括基底层和金刚石膜层或涂层。 金刚石膜层由化学气相沉积金刚石或类金刚石碳组成。 金刚石膜涂层或层在强热和低压下以一层或多层施加到基底上。 基材层可以由钢,不锈钢,钼,钛,钨,铜,铝,钽及其合金,硅,碳化硅,碳化钨,石英或蓝宝石中的至少一种构成。 金刚石膜层的涂覆可以通过等离子体增强化学气相沉积(PECVD),离子束沉积(IBD),等离子体辅助沉积,阴极电弧沉积,热丝化学气相沉积(HFCVD)或微波等离子体辅助化学 气相沉积(MPCVD)。

    Method of constructing optical filters by atomic layer control for next generation dense wavelength division multiplexer
    8.
    发明授权
    Method of constructing optical filters by atomic layer control for next generation dense wavelength division multiplexer 失效
    通过下一代密集波分复用器的原子层控制构造滤光片的方法

    公开(公告)号:US06893500B2

    公开(公告)日:2005-05-17

    申请号:US09865152

    申请日:2001-05-24

    IPC分类号: C23C14/54 C23C16/56 C30B25/16

    CPC分类号: C23C16/56 C23C14/547

    摘要: A method of constructing optical filters using alternating layers of materials with “low” and “high” indices of refraction and deposited with atomic layer control. The multilayered thin film filter uses, but is not limited to, alternating layers of single crystal, polycrystalline or amorphous materials grown with self-limiting epitaxial deposition processes well known to the semiconductor industry. The deposition process, such as atomic layer epitaxy (ALE), pulsed chemical beam epitaxy (PCB E), molecular layer epitaxy (MLE) or laser molecular beam epitaxy (laser MBE) can result in epitaxial layer by layer growth and thickness control to within one atomic layer. The alternating layers are made atomically smooth using a Chemical Reactive-Ion Surface Planarization (CRISP) process. Intrinsic stress is monitored using an in-situ cantilever based intrinsic stress optical monitor and adjusted during filter fabrication by deposition parameter modification. The resulting filter has sufficient individual layer thickness control and surface roughness to enable ˜12.5 GHz filters for next generation multiplexers and demultiplexers with more than 1000 channels in the wavelength range 1.31-1.62 μm.

    摘要翻译: 使用具有“低”和“高”折射率的材料的交替层来构造光学滤光器并用原子层控制沉积的方法。 多层薄膜滤光器使用但不限于用半导体工业公知的自限制外延沉积工艺生长的单晶,多晶或非晶材料的交替层。 原子层外延(ALE),脉冲化学束外延(PCB E),分子层外延(MLE)或激光分子束外延(激光MBE)等沉积过程可以使外延逐层生长和厚度控制到内部 一个原子层。 使用化学反应离子表面平面化(CRISP)方法将交替层制成原子平滑的。 使用基于原位悬臂的固有应力光学监测器监测内在应力,并通过沉积参数修改在过滤器制造期间进行调整。 所得到的滤波器具有足够的单独层厚度控制和表面粗糙度,以便在波长1.31-1.62μm的范围内为具有多于1000个通道的下一代多路复用器和解复用器提供〜12.5GHz滤波器。

    Chemical-organic planarization process for atomically smooth interfaces
    9.
    发明授权
    Chemical-organic planarization process for atomically smooth interfaces 失效
    用于原子平滑界面的化学 - 有机平面化过程

    公开(公告)号:US06767475B2

    公开(公告)日:2004-07-27

    申请号:US09864583

    申请日:2001-05-24

    IPC分类号: B44C122

    摘要: An oxygen ion process, Chemical Reactive-Ion Surface Planarization (CRISP), has been developed which enables planarization of thin film surfaces at the atomic level. Narrow/broad band filters produced with vacuum deposited multilayered thin films are designed to selectively reflect/transmit light at specific wavelengths. The optical performance is limited by the ability to control the individual layer thickness, the “roughness” of the individual layer surfaces and the stoichiometry of the layers. The process described herein will enable reduction of surface roughness at the interfaces of multilayered thin films to produce atomically smooth surfaces. The application of this process will result in the production of notch filters of less than 0.3 nm full width at half maximum (FWHM) centered at the desired wavelength. This will enable optical filters designed for telecommunication components such as next generation dense wavelength division multiplexer (DWDM) systems with significant performance improvement beyond the state-of-the-art.

    摘要翻译: 已经开发了氧离子过程,化学反应离子表面平面化(CRISP),其能够在原子水平上平坦化薄膜表面。 用真空沉积的多层薄膜制成的窄带/宽带滤光片被设计成选择性地反射/透射特定波长的光。 光学性能受到控制单层厚度,单层表面的“粗糙度”和各层的化学计量的能力的限制。 本文所述的方法将能够减少多层薄膜的界面处的表面粗糙度,以产生原子光滑的表面。 该方法的应用将导致生产以所需波长为中心的半峰全宽(FWHM)小于0.3nm的陷波滤波器。 这将使得为诸如下一代密集波分多路复用器(DWDM)系统等电信部件设计的光学滤波器具有超越现有技术的显着性能改进。

    Method for manufacture of field emission array
    10.
    发明授权
    Method for manufacture of field emission array 失效
    场致发射阵列制造方法

    公开(公告)号:US5944573A

    公开(公告)日:1999-08-31

    申请号:US988046

    申请日:1997-12-10

    IPC分类号: C23C16/02 C23C16/27 H01J9/02

    摘要: A process for depositing diamond crystals onto a field emission cathode. The process involves providing a cathode having a substrate, a gate layer and a plurality of emitters electrically insulated from the gate layer. An electric bias is applied to the gate layer and a ground potential is applied to the emitters. A heat source is positioned adjacent the cathode, and the cathode is exposed to a field of ions for a sufficient period to at least partially clean the emitters. A carbon containing gas is added to the atmosphere adjacent to the cathode such that carbon ions are dissociated from the gas and deposited on the emitters to form a "soot". The temperature of the cathode is then adjusted to a level which allows formation of diamond film.

    摘要翻译: 将金刚石晶体沉积到场致发射阴极上的工艺。 该方法包括提供具有基板,栅极层和与栅极层电绝缘的多个发射极的阴极。 对栅极层施加电偏压,并将接地电位施加到发射极。 热源邻近阴极定位,并且阴极暴露于离子场足够的时间以至少部分地清洁发射器。 在与阴极相邻的气氛中加入含碳气体,使得碳离子与气体分离并沉积在发射体上以形成“烟灰”。 然后将阴极的温度调节至允许形成金刚石膜的水平。