公开(公告)号：US5508800A

公开(公告)日：1996-04-16

申请号：US31924

申请日：1993-03-16

申请人： Moriya Miyashita ,  Hachiro Hiratsuka ,  Atsuko Kubota ,  Shuichi Samata ,  Masanori Numano ,  Hiroyuki Fukui

发明人： Moriya Miyashita ,  Hachiro Hiratsuka ,  Atsuko Kubota ,  Shuichi Samata ,  Masanori Numano ,  Hiroyuki Fukui

IPC分类号： H01L21/66 ,  G01N1/28 ,  G01N21/84 ,  G01N21/95 ,  H01L21/306 ,  G01N21/88

CPC分类号： H01L21/02046 ,  G01N21/9501 ,  H01L21/02019 ,  H01L21/02052 ,  H01L21/30608

摘要： There are provided a method of inspecting and evaluating semiconductor substrates, good quality semiconductor substrates, a method of manufacturing good quality semiconductor substrates, and a method of manufacturing semiconductor devices using good quality semiconductor substrates.A semiconductor substrate is processed with aqueous basic solution. In this process, the substrate is dipped in the aqueous solution or exposed to a vapor of the aqueous solution. With this process, the surface of the substrate is selectively etched. The substrate surface after the etching process is radiated with a laser beam to measure a light scattered point density. The quality of the substrate can be judged in accordance with the measured density. A thermal treatment may be carried out before or after processing the substrate with the aqueous basic solution. The thermal treatment considerably changes the fine defect density on the surface of the substrate. In accordance with such a change, the quality of the substrate may be judged. If a substrate judged as having a good quality is used, a semiconductor device having a good quality substrate can be obtained.

摘要翻译： 提供了一种检查和评估半导体衬底，优质半导体衬底，制造优质半导体衬底的方法以及使用优质半导体衬底制造半导体器件的方法。 用碱性水溶液处理半导体衬底。 在该方法中，将基材浸渍在水溶液中或暴露于水溶液的蒸气中。 通过该工艺，选择性地蚀刻衬底的表面。 蚀刻处理后的基板表面用激光束照射以测量光散射点密度。 可以根据测量的密度来判断基板的质量。 热处理可以在用碱性水溶液处理基材之前或之后进行。 热处理显着地改变了衬底表面上的细小缺陷密度。 根据这样的变化，可以判断基板的质量。 如果使用判断为质量好的基板，则可以获得具有优质基板的半导体器件。

公开(公告)号：US5271796A

公开(公告)日：1993-12-21

申请号：US858700

申请日：1992-03-27

申请人： Moriya Miyashita ,  Mokuji Kageyama ,  Hachiro Hiratsuka

发明人： Moriya Miyashita ,  Mokuji Kageyama ,  Hachiro Hiratsuka

IPC分类号： G01B11/30 ,  C30B33/00 ,  G01N21/88 ,  G01N21/93 ,  H01L21/66 ,  H01S3/00 ,  H01L21/306 ,  B44C1/22

CPC分类号： C30B33/00 ,  G01N21/88

摘要： A method of detecting a defect on the surface of a semiconductor substrate, including: a first etching step of etching a semiconductor substrate by a first etching amount; a first check step of applying a beam to the surface of the substrate underwent the first etching step, and detecting a first reflected beam; a second etching step of etching the substrate etched by the first etching amount, by an additional etching amount, to make the total etching amount a second etching amount; a second check step of applying the beam to the surface of the substrate underwent the second etching step, and detecting a second reflected beam; and a calculation step of calculating the relation between the first and second reflected beams.

摘要翻译： 一种检测半导体衬底表面上的缺陷的方法，包括：第一蚀刻步骤，用第一蚀刻量蚀刻半导体衬底; 第一检查步骤，将光束施加到所述基板的表面，进行所述第一蚀刻步骤，并检测第一反射光束; 第二蚀刻步骤，通过附加蚀刻量蚀刻由第一蚀刻量蚀刻的衬底，以使总蚀刻量成为第二蚀刻量; 第二检查步骤，将光束施加到衬底的表面，进行第二蚀刻步骤，并检测第二反射光束; 以及计算第一和第二反射光束之间的关系的计算步骤。

公开(公告)号：US4837610A

公开(公告)日：1989-06-06

申请号：US147605

申请日：1988-01-22

申请人： Hachiro Hiratsuka ,  Yoshiaki Matsushita ,  Shintaro Yoshii

发明人： Hachiro Hiratsuka ,  Yoshiaki Matsushita ,  Shintaro Yoshii

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L29/51

CPC分类号： H01L21/28211 ,  H01L21/316 ,  H01L29/51

摘要： A semiconductor device is provided having as an insulating oxide film a silicon oxide film containing a metal, such as iron or chromium, of an average concentration of 1.times.10.sup.16 atoms/cm.sup.3 to 1.times.10.sup.19 atoms/cm.sup.3 which can be readily trapped therein.

摘要翻译： 提供半导体器件，其具有作为绝缘氧化膜的含有平均浓度为1×10 16原子/ cm 3至1×10 19原子/ cm 3的金属（例如铁或铬）的氧化硅膜，其可容易地被捕获。