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    Pseudomorphic high electron mobility transistor power device
    1.
    发明授权
    Pseudomorphic high electron mobility transistor power device 有权
    伪态高电子迁移率晶体管功率器件

    公开(公告)号：US06593603B1

    公开(公告)日：2003-07-15

    申请号：US10112359

    申请日：2002-03-29

    申请人： Haecheon Kim ,  Min Park ,  Jae-kyoung Mun ,  Chang-hee Hyoung ,  Hong-gu Ji ,  Ho-kyun Ahn

    发明人： Haecheon Kim ,  Min Park ,  Jae-kyoung Mun ,  Chang-hee Hyoung ,  Hong-gu Ji ,  Ho-kyun Ahn

    IPC分类号： H01L29739

    CPC分类号： H01L29/7785

    摘要： A pseudomorphic high electron mobility transistor (PHEMT) power device formed on a double planar doped epitaxial substrate and capable of operating with a single voltage source and a method for manufacturing the PHEMT power device are provided. The PHEMT power device includes: an epitaxial substrate including a GaAs buffer layer, an AlGaAs/GaAs superlattice layer, an updoped AlGaAs layer, a first doped silicon layer, a first spacer, an InGaAs electron transit layer, a second spacer, a second doped silicon layer having a different doping concentration from the first doped silicon layer, a lightly doped AlGaAs layer, and an undoped GaAs cap layer stacked sequentially on a semi-insulating GaAs substrate; a source electrode and a drain electrode formed on and in ohmic contact with the undoped GaAs cap layer; and a gate electrode formed on the lightly doped AlGaAs layer to extend through the undoped GaAs cap layer.

    摘要翻译： 提供了一种形成在双平面掺杂外延基板上并且能够用单个电压源操作的伪形高电子迁移率晶体管（PHEMT）功率器件和用于制造PHEMT功率器件的方法。 PHEMT功率器件包括：外延衬底，其包括GaAs缓冲层，AlGaAs / GaAs超晶格层，上升的AlGaAs层，第一掺杂硅层，第一间隔物，InGaAs电子迁移层，第二间隔物，第二掺杂 硅层，其具有与第一掺杂硅层不同的掺杂浓度，轻掺杂AlGaAs层和未掺杂的GaAs覆盖层，其顺序堆叠在半绝缘GaAs衬底上; 源电极和漏电极，形成在与未掺杂的GaAs盖层的欧姆接触中; 以及形成在轻掺杂的AlGaAs层上以延伸穿过未掺杂的GaAs覆盖层的栅电极。

    Semiconductor device having T-shaped gate electrode and method of manufacturing the same
    3.
    发明授权
    Semiconductor device having T-shaped gate electrode and method of manufacturing the same 有权
    具有T形栅电极的半导体器件及其制造方法

    公开(公告)号：US06979871B2

    公开(公告)日：2005-12-27

    申请号：US10723526

    申请日：2003-11-25

    申请人： Hokyun Ahn ,  Jae Kyoung Mun ,  Haecheon Kim

    发明人： Hokyun Ahn ,  Jae Kyoung Mun ,  Haecheon Kim

    IPC分类号： H01L21/336 ,  H01L21/335 ,  H01L29/423 ,  H01L29/812 ,  H01L29/76 ,  H01L29/94

    CPC分类号： H01L29/66462 ,  H01L29/42316 ,  H01L29/8128

    摘要： A semiconductor device in which a silica aerogel layer having a very low dielectric constant is used as an insulating layer such that parasitic capacitance between a gate electrode and a source electrode in a field effect transistor having a T-shaped gate electrode, and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, source and drain electrodes, which are formed on the semiconductor substrate to make ohmic contact with the semiconductor substrate, a T-shaped gate electrode, which is formed between the source and drain electrodes on the semiconductor substrate, and an insulating layer including a silica aerogel layer, the silica aerogel layer being interposed between the gate electrode and the source and drain electrodes.

    摘要翻译： 使用其中具有非常低介电常数的二氧化硅气凝胶层作为绝缘层的半导体器件，使得具有T形栅电极的场效应晶体管中的栅电极和源电极之间的寄生电容，以及 提供制造相同的。 半导体器件包括形成在半导体衬底上以与半导体衬底欧姆接触的半导体衬底，源电极和漏电极，形成在半导体衬底上的源极和漏极之间的T形栅电极， 以及包括二氧化硅气凝胶层的绝缘层，所述二氧化硅气凝胶层插入在所述栅电极和所述源漏电极之间。

    Power device having connection structure compensating for reactance component of transmission line
    4.
    发明申请
    Power device having connection structure compensating for reactance component of transmission line 失效
    具有补偿传输线电抗分量的连接结构的功率器件

    公开(公告)号：US20070132514A1

    公开(公告)日：2007-06-14

    申请号：US11519668

    申请日：2006-09-12

    申请人： Woo Chang ,  Jae Mun ,  Haecheon Kim ,  Jong Lim ,  Hong Ji ,  Ho Ahn

    发明人： Woo Chang ,  Jae Mun ,  Haecheon Kim ,  Jong Lim ,  Hong Ji ,  Ho Ahn

    IPC分类号： H03F3/68

    CPC分类号： H03F3/602 ,  H03F3/211 ,  H03F2200/366 ,  H03F2200/447 ,  H03F2200/543 ,  H03F2203/21178

    摘要： Provided is a power device having a connection structure compensating for a reactance component, in which transistors are arranged and connected to minimize deterioration of transistor properties caused by heat by compensating for a reactance component causing a phase difference due to transmission lines used for connecting a plurality of transistors in parallel such that the power device to be used for a high-frequency power amplifier outputs high power, and transmitting heat generated by high output power to a heat sink to be dissipated.

    摘要翻译： 提供了具有补偿电抗分量的连接结构的功率器件，其中配置并连接晶体管，以通过补偿导致由于用于连接多个元件的传输线引起的相位差的电抗分量来最小化由热引起的晶体管性质的劣化 的晶体管并联，使得用于高频功率放大器的功率器件输出高功率，并将由高输出功率产生的热量传输到散热器。