公开(公告)号：US20150037048A1

公开(公告)日：2015-02-05

申请号：US14129181

申请日：2013-08-02

Applicant: Yun-Chung Na ,  Han-Din Liu ,  Yimin Kang ,  Shu-Lu Chen

Inventor： Yun-Chung Na ,  Han-Din Liu ,  Yimin Kang ,  Shu-Lu Chen

IPC: H01L31/0216 ,  H01L31/0224 ,  H04B10/60 ,  H01L31/0232 ,  H01L31/108 ,  H01L31/18 ,  H01L31/107 ,  H01L31/028

CPC classification number: H01L31/02161 ,  G02B6/12004 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/107 ,  H01L31/1085 ,  H01L31/1868 ,  H01L31/1872 ,  H04B10/60 ,  Y02E10/547 ,  Y02P70/521

Abstract: A low voltage photodetector structure including a semiconductor device layer, which may be Ge, is disposed over a substrate semiconductor, which may be Si, for example within a portion of a waveguide extending laterally within a photonic integrated circuit (PIC) chip. In exemplary embodiments where the device layer is formed over an insulator layer, the insulator layer is removed to expose a surface of the semiconductor device layer and a passivation material formed as a replacement for the insulator layer within high field regions. In further embodiments, controlled avalanche gain is achieved by spacing electrodes in a metal-semiconductor-metal (MSM) architecture, or complementary doped regions in a p-i-n architecture, to provide a field strength sufficient for impact ionization over a distance not significantly more than an order of magnitude greater than the distance that a carrier must travel so as to acquire sufficient energy for impact ionization.

Abstract translation: 包括可以是Ge的半导体器件层的低电压光电检测器结构设置在衬底半导体上，衬底半导体可以是Si，例如在光子集成电路（PIC）芯片内横向延伸的波导的一部分内。 在其中器件层形成在绝缘体层上的示例性实施例中，去除绝缘体层以暴露半导体器件层的表面和形成为高场区域内的绝缘体层的替代物的钝化材料。 在另外的实施例中，受控的雪崩增益通过在金属 - 半导体 - 金属（MSM）结构中的电极间隔或引脚结构中的互补掺杂区域间隔来实现，以提供足够的冲击电离的场强，该距离不大于 数量级大于载体必须行进的距离，以获得足够的能量进行冲击电离。

公开(公告)号：US09614119B2

公开(公告)日：2017-04-04

申请号：US13976379

申请日：2011-12-29

Applicant: Yimin Kang ,  Han-Din Liu

Inventor： Yimin Kang ,  Han-Din Liu

IPC: H01L31/107 ,  H01L33/00 ,  H01L31/0352

CPC classification number: H01L33/0012 ,  H01L31/035272 ,  H01L31/1075

Abstract: An Si/Ge SACM avalanche photo-diodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various layers of particular thicknesses and doping concentrations. An optical waveguide can guide infrared and/or optical signals or energy into the absorption region. The resulting photo-generated carriers are swept into the i-Si layer and/or multiplication region for avalanche multiplication. The APD has a breakdown bias voltage of well less than 12 V and an operating bandwidth of greater than 10 GHz, and is therefore suitable for use in consumer electronic devices, high speed communication networks, and the like.

公开(公告)号：US20140151839A1

公开(公告)日：2014-06-05

申请号：US13976379

申请日：2011-12-29

Applicant: Yimin Kang ,  Han-Din Liu

Inventor： Yimin Kang ,  Han-Din Liu

IPC: H01L33/00

CPC classification number: H01L33/0012 ,  H01L31/035272 ,  H01L31/1075

Abstract: An Si/Ge SACM avalanche photo-diodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various layers of particular thicknesses and doping concentrations. An optical waveguide can guide infrared and/or optical signals or energy into the absorption region. The resulting photo-generated carriers are swept into the i-Si layer and/or multiplication region for avalanche multiplication. The APD has a breakdown bias voltage of well less than 12 V and an operating bandwidth of greater than 10 GHz, and is therefore suitable for use in consumer electronic devices, high speed communication networks, and the like.

Abstract translation: 具有低击穿电压特性的Si / Ge SACM雪崩光电二极管（APD）包括吸收区域和具有特定厚度和掺杂浓度的各种层的乘法区域。 光波导可以将红外和/或光信号或能量引入吸收区域。 所得到的光生载流子被扫描到i-Si层和/或用于雪崩倍增的乘法区域中。 APD具有良好小于12V的击穿偏置电压和大于10GHz的工作带宽，因此适用于消费电子设备，高速通信网络等。