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    Wafer bonded virtual substrate and method for forming the same
    2.
    发明授权
    Wafer bonded virtual substrate and method for forming the same 有权
    晶圆粘结虚拟基板及其形成方法

    公开(公告)号：US07238622B2

    公开(公告)日：2007-07-03

    申请号：US10761918

    申请日：2004-01-20

    申请人： Harry A. Atwater, Jr. ,  James M. Zahler ,  Anna Fontcuberta i Morral

    发明人： Harry A. Atwater, Jr. ,  James M. Zahler ,  Anna Fontcuberta i Morral

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/187 ,  H01L21/02096 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/30625 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/18 ,  Y02E10/50 ,  Y10S438/933

    摘要： A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

    摘要翻译： 形成由光电子器件基板和手柄基板构成的虚拟基板的方法包括以下步骤：引发装置基板与手柄基板的接合，改善或增加装置的机械强度和处理基板，以及使装置基板变薄 在虚拟基板上留下单晶膜，例如通过从器件衬底剥离器件膜。 手柄基板通常为Si或其它便宜的普通基板材料，而光电器件基板由更昂贵和专门的电光材料形成。 使用本发明的方法，可以将各种各样的高质量的薄膜电光材料粘合到便宜的基板上，这些基板用作在薄膜电光材料中制造的光电子器件层的机械支撑。

    CHIP-BASED SLOT WAVEGUIDE SPONTANEOUS EMISSION LIGHT SOURCES
    7.
    发明申请
    CHIP-BASED SLOT WAVEGUIDE SPONTANEOUS EMISSION LIGHT SOURCES 审中-公开
    基于芯片的波峰波形自发发射光源

    公开(公告)号：US20100303414A1

    公开(公告)日：2010-12-02

    申请号：US12799171

    申请日：2010-04-20

    申请人： Harry A. Atwater, JR. ,  Ryan M. Briggs ,  Mark L. Brongersma ,  Young Chul Jun ,  Thomas L. Koch ,  Ravi Sekhar Tummidi

    发明人： Harry A. Atwater, JR. ,  Ryan M. Briggs ,  Mark L. Brongersma ,  Young Chul Jun ,  Thomas L. Koch ,  Ravi Sekhar Tummidi

    IPC分类号： G02B6/30

    CPC分类号： G02B6/12004

    摘要： An optical device includes an optically emitting material producing spontaneous emission and an optical waveguide coupled to the optically emitting material. The spontaneous emission from the optically emitting material is emitted into at least one optical mode of the optical waveguide. The optical waveguide coupled to the optically emitting material does not provide optical gain, and the presence of the optical waveguide causes the spontaneous emission rate to be substantially more rapid than in the absence of the optical waveguide. The optical waveguide causes the more rapid spontaneous emission rate over a broad range of frequencies.

    摘要翻译： 光学装置包括产生自发发射的光学发射材料和耦合到光学发射材料的光波导。 来自光学发射材料的自发发射被发射到光波导的至少一种光学模式。 耦合到光发射材料的光波导不提供光学增益，并且光波导的存在导致自发发射速率比没有光波导的情况下快得多。 光波导导致在宽频率范围内更快速的自发发射速率。

    Bonded semiconductor substrate
    8.
    发明授权
    Bonded semiconductor substrate 有权
    结合半导体衬底

    公开(公告)号：US07755109B2

    公开(公告)日：2010-07-13

    申请号：US11430160

    申请日：2006-05-09

    申请人： Harry A. Atwater, Jr. ,  James M. Zahler

    发明人： Harry A. Atwater, Jr. ,  James M. Zahler

    IPC分类号： H01L29/739

    CPC分类号： H01L21/76254 ,  H01L21/187 ,  H01L31/0304 ,  H01L31/0392 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/1852 ,  Y02E10/544 ,  Y10S438/933

    摘要： Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600° C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

    摘要翻译： Ge / Si和其他非硅膜异质结构是通过晶片接合到诸如Si的廉价衬底的Ge膜的氢诱导剥离形成的。 将Ge的薄的单晶层转移到Si衬底。 在Ge / Si异质结构的界面处的键是共价的，以确保良好的热接触，机械强度，并且能够在Si衬底和Ge层之间形成欧姆接触。 为了实现这种类型的键合，使用疏水性晶片结合，因为如本发明所示的那样，促进范德华键的氢表面终止物质在高于600℃的温度下进入共价键，在疏水结合的Ge / Si层中转移 系统。

    Method For the Fabrication of GaAs/Si and Related Wafer Bonded Virtual Substrates
    9.
    发明申请
    Method For the Fabrication of GaAs/Si and Related Wafer Bonded Virtual Substrates 审中-公开
    GaAs / Si和相关晶圆保护虚拟衬底的制作方法

    公开(公告)号：US20080211061A1

    公开(公告)日：2008-09-04

    申请号：US11587044

    申请日：2005-04-21

    申请人： Harry A. Atwater Jr ,  James M. Zahler

    发明人： Harry A. Atwater Jr ,  James M. Zahler

    IPC分类号： H01L29/20 ,  H01L21/18

    CPC分类号： H01L21/2007 ,  H01L21/76254

    摘要： A method of making a virtual substrate includes providing a device substrate of a first material containing a device layer of a second material different from the first material located over a first side of the device substrate, implanting ions into the device substrate such that a damaged region is formed in the device substrate below the device layer, bonding the device layer to a handle substrate, and separating at least a portion of the device substrate from the device layer bonded to the handle substrate along the damaged region to form a virtual substrate comprising the device layer bonded to the handle substrate.

    摘要翻译： 制造虚拟衬底的方法包括提供第一材料的器件衬底，该第一材料含有不同于位于器件衬底的第一侧上的第一材料的第二材料的器件层，将离子注入器件衬底中，使得受损区域 形成在器件层下方的器件衬底中，将器件层接合到处理衬底上，并且将器件衬底的至少一部分与沿受损区域结合到手柄衬底的器件层分离，以形成虚拟衬底， 器件层结合到处理衬底。

    Wafer bonded epitaxial templates for silicon heterostructures
    10.
    发明授权
    Wafer bonded epitaxial templates for silicon heterostructures 有权
    用于硅异质结构的晶圆键合外延模板

    公开(公告)号：US07341927B2

    公开(公告)日：2008-03-11

    申请号：US11004808

    申请日：2004-12-07

    申请人： Harry A. Atwater, Jr. ,  James M. Zahler ,  Anna Fontcubera I Morral

    发明人： Harry A. Atwater, Jr. ,  James M. Zahler ,  Anna Fontcubera I Morral

    IPC分类号： H01L21/322

    CPC分类号： H01L21/187 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/30625 ,  H01L21/76254 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/005 ,  Y02E10/50

    摘要： A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

    摘要翻译： 在诸如InP / InGaAs / InP双异质结构的虚拟衬底上外延生长异质结构器件层。 器件衬底和处理衬底形成虚拟衬底。 器件基板结合到手柄基板上，并由适合制造光电器件的材料组成。 手柄基板由适于提供机械支撑的材料组成。 改善了器件和手柄基板的机械强度，并且将器件基板减薄以在虚拟基板上留下单晶膜，例如通过从器件衬底剥离器件膜。 去除从器件衬底剥离的器件膜的上部，以为光电子器件提供更平滑和更不易出现的表面。 在其上可以制造光电器件的平滑表面上外延生长异质结构。