摘要:
A voltage level shifter for a semiconductor memory device includes a VPP level control circuit that is configured to detect a VPP voltage and to change the VPP voltage in response to a package burn-in mode signal and a test mode signal independent of at least one direct current voltage generated in response to the package burn-in mode signal.
摘要:
A memory module and a memory system are provided. The memory module includes a first circuit board on which at least one memory chip is mounted, a second circuit board on which at least one memory chip is mounted, and a flexible coupler electrically connecting the first circuit board to the second circuit board. The memory module is bendable and is configured to extend around a memory controller. The memory chips are electrically coupled with the memory controller via a respective plurality of signal lines. The bendable memory module is configured to be bent around the memory controller such that respective lengths of the signal lines are equal.
摘要:
A method of booting an information handling system including a volatile memory device to be selectively tested during a booting operation, the method comprising a step of reading current system configuration information from the information handling system, a step of comparing the current system configuration information with corresponding prestored system configuration information in a nonvolatile memory device, and a step of selectively performing a test for the volatile memory device according to a result of the comparison.
摘要:
Each memory chip of a memory module tests a total of N data bits from X memory blocks for efficient testing and outputs N/X test data bits from one of the memory blocks. A memory module includes a plurality of memory chips and a plurality of comparison units. Each comparison unit is disposed within a respective memory chip for testing a plurality of test data bits from a plurality of memory blocks. In addition, each comparison unit outputs test data bits from one of the memory blocks within the respective memory chip.
摘要:
A memory system for controlling interface timing in a memory module and a related timing control method are disclosed. The memory system comprises a memory module having a memory module controller configured to control interface timing of a plurality of memory devices in accordance with memory information and memory signal information. The memory information includes memory initialization information and interface timing information for the plurality of memory devices.
摘要:
Each memory chip of a memory module tests a total of N data bits from X memory blocks for efficient testing and outputs N/X data bits from one of the memory blocks. A memory module includes a plurality of memory chips and a plurality of comparison units. Each comparison unit is disposed within a respective memory chip for testing a plurality of data bits from a plurality of memory blocks. In addition, each comparison unit outputs data bits from one of the memory blocks within the respective memory chip.
摘要:
A memory system for controlling interface timing in a memory module and a related timing control method are disclosed. The memory system comprises a memory module having a memory module controller configured to control interface timing of a plurality of memory devices in accordance with memory information and memory signal information. The memory information includes memory initialization information and interface timing information for the plurality of memory devices.
摘要:
Each memory chip of a memory module tests a total of N data bits from X memory blocks for efficient testing and outputs N/X test data bits from one of the memory blocks. A memory module includes a plurality of memory chips and a plurality of comparison units. Each comparison unit is disposed within a respective memory chip for testing a plurality of test data bits from a plurality of memory blocks. In addition, each comparison unit outputs test data bits from one of the memory blocks within the respective memory chip.
摘要:
A method of optimizing a driving voltage of an electronic device includes; iteratively varying the level of a driving voltage provided to the electronic device and performing an operation of the electronic device with each iteration until the operation fails, and then selecting as an operating level for the driving voltage, a level of the driving voltage for an iteration just prior to an iteration in which the operation fails.
摘要:
A memory module and a memory system are provided. The memory module includes a first circuit board on which at least one memory chip is mounted, a second circuit board on which at least one memory chip is mounted, and a flexible coupler electrically connecting the first circuit board to the second circuit board. The memory module is bendable and is configured to extend around a memory controller. The memory chips are electrically coupled with the memory controller via a respective plurality of signal lines. The bendable memory module is configured to be bent around the memory controller such that respective lengths of the signal lines are equal.