公开(公告)号：US08443174B2

公开(公告)日：2013-05-14

申请号：US11838488

申请日：2007-08-14

申请人： Hong-Seok Kim ,  Hee Seok Kim ,  Jeongwook Kim ,  Suk Jin Kim

发明人： Hong-Seok Kim ,  Hee Seok Kim ,  Jeongwook Kim ,  Suk Jin Kim

IPC分类号： G06F9/30 ,  G06F9/312

CPC分类号： G06F9/3842

摘要： Provided is a processor and method of performing speculative load instructions of the processor in which a load instruction is performed only in the case where the load instruction substantially accesses a memory. A load instruction for canceling operations is performed in other cases except the above case, so that problems occurring by accessing an input/output (I/O) mapped memory area and the like at the time of performing speculative load instructions can be prevented using only a software-like method, thereby improving the performance of a processor.

摘要翻译： 提供了一种执行处理器的推测性加载指令的处理器和方法，其中仅在加载指令基本访问存储器的情况下执行加载指令。 在除了上述情况之外的其他情况下执行用于取消操作的加载指令，使得仅在执行推测性加载指令时访问输入/输出（I / O）映射存储区等而出现的问题可以仅被使用 一种类似软件的方法，从而提高处理器的性能。

公开(公告)号：US08225049B2

公开(公告)日：2012-07-17

申请号：US12689317

申请日：2010-01-19

申请人： Subramanya Mayya ,  Hee-seok Kim ,  Ik-Soo Kim ,  Min-Young Park ,  Hyun-Suk Kwon

发明人： Subramanya Mayya ,  Hee-seok Kim ,  Ik-Soo Kim ,  Min-Young Park ,  Hyun-Suk Kwon

IPC分类号： G06F13/16

CPC分类号： H01L27/10897 ,  H01L23/58 ,  H01L25/0657 ,  H01L25/16 ,  H01L27/10876 ,  H01L27/10894 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a data storage device. The data storage device includes an interface, a buffer controller, a memory controller, a non-volatile memory, and a self-powered semiconductor device adjacent to and electrically connected to the buffer controller. The self-powered semiconductor device includes a semiconductor chip and a rechargeable micro-battery attached to the semiconductor chip. The rechargeable micro-battery includes a first current collector and a second current collector, which face each other, a first polarizing electrode in contact with the first current collector and facing the second current collector, a second polarizing electrode in contact with the second current collector and facing the first polarizing electrode, and an electrolyte layer formed between the first and second polarizing electrodes.

摘要翻译： 提供了一种数据存储装置。 数据存储设备包括接口，缓冲器控制器，存储器控制器，非易失性存储器以及与缓冲器控制器相邻并电连接的自供电半导体器件。 自供电的半导体器件包括半导体芯片和附接到半导体芯片的可再充电微型电池。 所述可再充电微电池包括彼此面对的第一集电体和第二集电体，与所述第一集电体接触并面对所述第二集电体的第一极化电极，与所述第二集电体接触的第二极化电极， 并且面对第一极化电极，以及形成在第一和第二极化电极之间的电解质层。

公开(公告)号：US20110243672A1

公开(公告)日：2011-10-06

申请号：US13131525

申请日：2008-11-27

申请人： Hee Seok Kim

发明人： Hee Seok Kim

IPC分类号： B23C5/22 ,  B23C5/14

CPC分类号： B23C5/1045 ,  B23C5/2213 ,  B23C2210/168 ,  Y10T407/1924 ,  Y10T407/1946 ,  Y10T407/1964 ,  Y10T407/23

摘要： A cutting tool includes a tool body and at least one double-sided cutting insert mounted in an insert pocket of the tool body. The at least one double-sided cutting insert includes: an elliptical top surface; an elliptical bottom surface; first and second side surfaces connecting between both side ends of the top and bottom surfaces, respectively; a pair of corners connecting between both side ends of the first and second side surfaces, respectively; first and second cutting edges formed at a boundary portion between the top surface and the first side surface and a boundary portion between the bottom side surface and the second side surface and having a curved shape, respectively.

摘要翻译： 切割工具包括工具主体和安装在工具主体的刀片槽中的至少一个双面切削刀片。 所述至少一个双面切削刀片包括：椭圆顶面; 椭圆底面; 分别在上表面和下表面的两个侧端之间连接的第一和第二侧表面; 分别连接在第一和第二侧表面的两个侧端之间的一对拐角; 第一和第二切削刃分别形成在顶表面和第一侧表面之间的边界部分以及底侧表面和第二侧表面之间的边界部分，并且具有弯曲形状。

公开(公告)号：US20100181605A1

公开(公告)日：2010-07-22

申请号：US12689317

申请日：2010-01-19

申请人： Subramanya MAYYA ,  Hee-seok KIM ,  Ik-Soo KIM ,  Min-Young PARK ,  Hyun-Suk KWON

发明人： Subramanya MAYYA ,  Hee-seok KIM ,  Ik-Soo KIM ,  Min-Young PARK ,  Hyun-Suk KWON

IPC分类号： H01L27/108

CPC分类号： H01L27/10897 ,  H01L23/58 ,  H01L25/0657 ,  H01L25/16 ,  H01L27/10876 ,  H01L27/10894 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a data storage device. The data storage device includes an interface, a buffer controller, a memory controller, a non-volatile memory, and a self-powered semiconductor device adjacent to and electrically connected to the buffer controller. The self-powered semiconductor device includes a semiconductor chip and a rechargeable micro-battery attached to the semiconductor chip. The rechargeable micro-battery includes a first current collector and a second current collector, which face each other, a first polarizing electrode in contact with the first current collector and facing the second current collector, a second polarizing electrode in contact with the second current collector and facing the first polarizing electrode, and an electrolyte layer formed between the first and second polarizing electrodes.

摘要翻译： 提供了一种数据存储装置。 数据存储设备包括接口，缓冲器控制器，存储器控制器，非易失性存储器以及与缓冲器控制器相邻并电连接的自供电半导体器件。 自供电的半导体器件包括半导体芯片和附接到半导体芯片的可再充电微型电池。 所述可再充电微电池包括彼此面对的第一集电体和第二集电体，与所述第一集电体接触并面对所述第二集电体的第一极化电极，与所述第二集电体接触的第二极化电极， 并且面对第一极化电极，以及形成在第一和第二极化电极之间的电解质层。

公开(公告)号：US20100108116A1

公开(公告)日：2010-05-06

申请号：US12534517

申请日：2009-08-03

申请人： Minoru Taya ,  Hee Seok Kim ,  Miseon Choi ,  Morio Nagata

发明人： Minoru Taya ,  Hee Seok Kim ,  Miseon Choi ,  Morio Nagata

IPC分类号： H01L35/14 ,  H01L31/00 ,  B22F3/105

CPC分类号： H01L35/22 ,  B22F2998/10 ,  C22C1/0408 ,  C22C1/0491 ,  H01G9/2031 ,  H01G9/2059 ,  H01G9/2068 ,  H01G9/2072 ,  H01G9/209 ,  H01L51/0092 ,  H01M14/005 ,  Y02E10/542 ,  Y02E10/549 ,  C22C1/1084 ,  B22F3/105

摘要： A first concept is directed to an improved dye-sensitized solar cell (DSSC). In a first embodiment, photo energy conversion efficiency (PCE) is increased by employing a reflective layer disposed underneath the DSSC device to direct light that would otherwise be wasted back into the DSSC device. In a second embodiment, the PCE of a DSSC is increased by adding an additional dye, which exhibits significant absorption in the red and near-IR regions. A novel phthalocyanine derivative has been developed that absorbs well in the red and near IR-regions, readily couples to the titanium oxide semiconductor in the DSSC, and enables the DSSC device to exhibit a high photo-current efficiency. A second concept is directed to novel thermoelectric materials formed from a mechanical alloy of silicon and at least one other periodic element, wherein the mechanical alloy is fused together using spark plasma sintering.

摘要翻译： 第一个概念涉及改进的染料敏化太阳能电池（DSSC）。 在第一实施例中，通过采用设置在DSSC器件下面的反射层来引导否则将浪费回DSSC器件的光来增加光能转换效率（PCE）。 在第二个实施方案中，通过加入在红色和近红外区域显示显着吸收的附加染料来增加DSSC的PCE。 已经开发了一种新颖的酞菁衍生物，其在红色和近红外区域中吸收良好，容易耦合到DSSC中的氧化钛半导体，并且使得DSSC器件能够表现出高的光电流效率。 第二个概念涉及由硅和至少一个其它周期元素的机械合金形成的新型热电材料，其中机械合金使用放电等离子体烧结熔合在一起。

公开(公告)号：US07529917B2

公开(公告)日：2009-05-05

申请号：US11519858

申请日：2006-09-13

申请人： Soo Jung Ryu ,  Jeong Wook Kim ,  Dong-Hoon Yoo ,  Hee Seok Kim

发明人： Soo Jung Ryu ,  Jeong Wook Kim ,  Dong-Hoon Yoo ,  Hee Seok Kim

IPC分类号： G06F9/00

CPC分类号： G06F9/4812

摘要： A processor including a coarse grained array including a plurality of function units and a plurality of register files, wherein a loop to be executed by the coarse grained array is split into a plurality of sub-loops, and when an interrupt request occurs while executing the sub-loop in the coarse grained array, the interrupt request is processed after the executing of the sub-loop is completed.

摘要翻译： 一种包括包括多个功能单元和多个寄存器文件的粗粒度阵列的处理器，其中由粗粒度阵列执行的循环被分割成多个子循环，并且当执行中断请求时发生中断请求 在粗粒子数组中的子循环，中断请求在子循环执行完成后被处理。

公开(公告)号：US20080209159A1

公开(公告)日：2008-08-28

申请号：US11828440

申请日：2007-07-26

申请人： Jong Myon KIM ,  Soojung RYU ,  Dong-Hoon YOO ,  Hong-Seok KIM ,  Hee Seok KIM ,  Jeongwook KIM ,  Kyoung June MIN

发明人： Jong Myon KIM ,  Soojung RYU ,  Dong-Hoon YOO ,  Hong-Seok KIM ,  Hee Seok KIM ,  Jeongwook KIM ,  Kyoung June MIN

IPC分类号： G06F12/00

CPC分类号： G06F8/443 ,  G06F8/447 ,  G06F12/0207

摘要： A memory access method includes: obtaining a, b, and c from a program code for accessing a memory with a triple loop in a program, a being a number of values which an inner-most loop variable of the triple loop may have, b being a number of values which a middle loop variable of the triple loop may have, and c being a number of values which an outer-most loop variable of the triple loop may have; obtaining a starting address of the memory accessed by the triple loop; and obtaining an a×b×c number of addresses of the memory accessed by the triple loop using the starting address and a function.

摘要翻译： 存储器访问方法包括：从程序中用于访问具有三重循环的存储器的程序代码获取a，b和c，所述三循环的最内循环变量可以具有多个值，b 是三重循环的中间循环变量可能具有的多个值，c是三重循环的最外圈循环变量可能具有的值的数量; 获取由三重循环访问的存储器的起始地址; 并且使用起始地址和功能获得由三重回路访问的存储器的axbxc个地址数。

公开(公告)号：US20080072012A1

公开(公告)日：2008-03-20

申请号：US11645771

申请日：2006-12-27

申请人： Hee Seok Kim

发明人： Hee Seok Kim

IPC分类号： G06F15/00

CPC分类号： G06F9/3877 ,  G06F9/3017 ,  G06F9/3885

摘要： An operation system and method of processing a user-defined extended operation are provided. The method includes using a software pipelining technology by enabling a processor to process a user-defined extended operation. An operation process system includes a plurality of functional units which are operable to process a primitive operation and a processor which is operable to process an extended operation according to a control of each of the functional units.

摘要翻译： 提供了一种处理用户定义的扩展操作的操作系统和方法。 该方法包括通过使处理器能够处理用户定义的扩展操作来使用软件流水线技术。 操作处理系统包括可操作以处理原始操作的多个功能单元和可操作以根据每个功能单元的控制来处理扩展操作的处理器。

公开(公告)号：US20080068375A1

公开(公告)日：2008-03-20

申请号：US11655244

申请日：2007-01-19

申请人： Kyoung June Min ,  Jong Myon Kim ,  Hee Seok Kim ,  Jeong Wook Kim ,  Suk Jin Kim

发明人： Kyoung June Min ,  Jong Myon Kim ,  Hee Seok Kim ,  Jeong Wook Kim ,  Suk Jin Kim

IPC分类号： G06T15/40

CPC分类号： G06T15/405

摘要： A method and system for an early Z test in a tile-based three-dimensional rendering is provided. In the method and system for an early Z test, a portion which is not displayed to a user is removed prior to performing a rasterization process, and thereby performing the 3D rendering efficiently. The method includes segmenting a scene into tiles for performing a rendering with respect to a triangle; selecting a first tile of the tiles, which has a tile Z value less than a minimum Z value of the triangle; and performing the rendering with respect to the triangle in remaining tiles excluding the selected first tile of the tiles.

摘要翻译： 提供了一种基于瓦片的三维渲染的早期Z检验的方法和系统。 在早期Z测试的方法和系统中，在执行光栅化处理之前去除了不向用户显示的部分，从而有效地执行3D渲染。 该方法包括将场景分割成用于执行相对于三角形的呈现的图块; 选择瓦片的第一瓦片，其具有小于所述三角形的最小Z值的瓦片Z值; 以及在除了所选择的瓦片的所选择的第一瓦片之外的剩余瓦片中执行相对于三角形的呈现。

公开(公告)号：US20050148201A1

公开(公告)日：2005-07-07

申请号：US10981731

申请日：2004-11-05

申请人： Jae-Young Ahn ,  Jin-Gyun Kim ,  Hee-Seok Kim ,  Jin-Tae No ,  Sang-Ryol Yang ,  Sung-Hae Lee ,  Hong-Suk Kim ,  Ju-Wan Lim ,  Young-Seok Kim ,  Yong-Woo Hyung ,  Man-Sug Kang

发明人： Jae-Young Ahn ,  Jin-Gyun Kim ,  Hee-Seok Kim ,  Jin-Tae No ,  Sang-Ryol Yang ,  Sung-Hae Lee ,  Hong-Suk Kim ,  Ju-Wan Lim ,  Young-Seok Kim ,  Yong-Woo Hyung ,  Man-Sug Kang

IPC分类号： C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  H01L21/318 ,  H01L21/321 ,  H01L21/44

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  H01L21/02274 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/3211

摘要： A method for forming a low-k dielectric layer for a semiconductor device using an ALD process including (a) forming predetermined interconnection patterns on a semiconductor substrate, (b) supplying a first and a second reactive material to a chamber having the substrate therein, thereby adsorbing the first and second reactive materials on a surface of the substrate, (c) supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, (d) supplying a third reactive material to the chamber, thereby causing a reaction between the first and second materials and the third reactive material to form a monolayer, (e) supplying a second gas to the chamber to purge the third reactive material that remains unreacted in the chamber and a byproduct; and (f) repeating (b) through (e) a predetermined number of times to form a SiBN ternary layer having a predetermined thickness on the substrate.

摘要翻译： 一种用于使用ALD工艺形成用于半导体器件的低k电介质层的方法，包括（a）在半导体衬底上形成预定的互连图案，（b）向其中具有衬底的室提供第一和第二反应性材料， 从而将第一和第二反应性材料吸附在衬底的表面上，（c）向腔室供应第一气体以清除保留未反应的第一和第二反应性材料，（d）向室提供第三反应性材料，从而 引起所述第一和第二材料和所述第三反应性材料之间的反应以形成单层，（e）向所述室供应第二气体以吹扫在所述室中保留未反应的第三反应性材料和副产物; 和（f）重复（b）至（e）预定次数以在基板上形成具有预定厚度的SiBN三元层。