公开(公告)号：US20130284262A1

公开(公告)日：2013-10-31

申请号：US13990916

申请日：2011-12-01

申请人： Kazuya Ebara ,  Hikaru Imamura ,  Rikimaru Sakamoto

发明人： Kazuya Ebara ,  Hikaru Imamura ,  Rikimaru Sakamoto

IPC分类号： H01L31/0216

CPC分类号： H01L31/02168 ,  C08G12/26 ,  C08G18/3851 ,  C08G18/8061 ,  Y02E10/50 ,  Y02E10/52

摘要： There is provided a novel material used for solar cells that can contribute to the improvement in maximum output of solar cells. A film-forming material for forming a light-collecting film on a transparent electrode of a solar cell, including an aromatic group-containing organic polymer compound (A), wherein the film-forming material exhibits an index of refraction of 1.5 to 2.0 at a wavelength of 633 nm and a transmittance of 95% or more with respect to light having a wavelength of 400 nm, and a solar cell obtained by coating a cured film made from the film-forming material on a surface of a transparent electrode.

摘要翻译： 提供了用于太阳能电池的新型材料，其可以有助于提高太阳能电池的最大输出。 一种在含有芳香族基团的有机高分子化合物（A）的太阳能电池的透明电极上形成聚光膜的成膜材料，其中，所述成膜材料的折射率为1.5〜2.0， 波长为633nm，波长为400nm的光的透射率为95％以上，以及通过将由成膜材料制成的固化膜涂布在透明电极的表面上而得到的太阳能电池。

公开(公告)号：US09761741B2

公开(公告)日：2017-09-12

申请号：US13990916

申请日：2011-12-01

申请人： Kazuya Ebara ,  Hikaru Imamura ,  Rikimaru Sakamoto

发明人： Kazuya Ebara ,  Hikaru Imamura ,  Rikimaru Sakamoto

IPC分类号： H01L31/0216 ,  C08G12/26 ,  C08G18/80 ,  C08G18/38

CPC分类号： H01L31/02168 ,  C08G12/26 ,  C08G18/3851 ,  C08G18/8061 ,  Y02E10/50 ,  Y02E10/52

摘要： There is provided a novel material used for solar cells that can contribute to the improvement in maximum output of solar cells. A film-forming material for forming a light-collecting film on a transparent electrode of a solar cell, including an aromatic group-containing organic polymer compound (A), wherein the film-forming material exhibits an index of refraction of 1.5 to 2.0 at a wavelength of 633 nm and a transmittance of 95% or more with respect to light having a wavelength of 400 nm, and a solar cell obtained by coating a cured film made from the film-forming material on a surface of a transparent electrode.

公开(公告)号：US20110204292A1

公开(公告)日：2011-08-25

申请号：US13126675

申请日：2009-10-27

申请人： Hikaru Imamura

发明人： Hikaru Imamura

IPC分类号： C09K11/06

CPC分类号： H01L31/055 ,  C08J5/18 ,  C08J2300/10 ,  C09K11/06 ,  C09K2211/1416 ,  C09K2211/145 ,  Y02E10/52 ,  Y02E10/542

摘要： It is an object to improve photoelectric conversion efficiency by use of a wavelength conversion film that is formed without dispersion of wavelength conversion substance and by using no rare earth compound. There is provided a composition for easily forming such a wavelength conversion film by spin-coating or the like. The present invention relates to a composition for forming a wavelength conversion film for a photovoltaic device, comprising a polymer or an oligomer in which a fluorescent moiety is incorporated, and a solvent. The fluorescent moiety may be incorporated in a main chain or a side chain of the polymer or the oligomer. The present invention also relates to a wavelength conversion film for a photovoltaic device that is formed from the composition for forming a wavelength conversion film.

摘要翻译： 本发明的目的是通过使用不分散波长转换物质的波长转换膜和不使用稀土类化合物来提高光电转换效率。 提供了通过旋涂等容易地形成这种波长转换膜的组合物。 本发明涉及用于形成用于光伏器件的波长转换膜的组合物，其包含其中引入荧光部分的聚合物或低聚物和溶剂。 荧光部分可以结合在聚合物或低聚物的主链或侧链中。 本发明还涉及由用于形成波长转换膜的组合物形成的用于光伏器件的波长转换膜。

公开(公告)号：US07842620B2

公开(公告)日：2010-11-30

申请号：US12311742

申请日：2007-10-12

申请人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

发明人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

IPC分类号： H01L21/31

CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144

摘要： There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).

摘要翻译： 在半导体器件的光刻工艺中提供了用作光致抗蚀剂的下层的层压体，以及通过使用层压体制造半导体器件的方法。 该方法包括：在半导体上依次层叠有机下层膜（A层），含硅硬掩模（B层），有机抗反射膜（C层）和光致抗蚀剂膜（D层）的各层 基质。 该方法还包括：在光致抗蚀剂膜（层D）中形成抗蚀剂图案; 用抗蚀剂图案蚀刻有机抗反射膜（层C）; 用图案化的有机抗反射膜（C层）蚀刻含硅硬掩模（B层）; 用图案化的含硅硬掩模（B层）蚀刻有机下层膜（层A）; 并用图案化的有机下层膜（层A）处理半导体衬底。

公开(公告)号：US20100022089A1

公开(公告)日：2010-01-28

申请号：US12311742

申请日：2007-10-12

申请人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

发明人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

IPC分类号： H01L21/311 ,  G03F7/075

CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144

摘要： There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).

公开(公告)号：US08283103B2

公开(公告)日：2012-10-09

申请号：US12673926

申请日：2008-08-26

申请人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

发明人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/40

CPC分类号： G03F7/11 ,  C08G77/60 ,  C09D183/16 ,  G03F7/0752

摘要： There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.

摘要翻译： 提供一种用于形成可均匀涂布的抗蚀剂下层膜的组合物，并且在热固化期间抑制升华。 还提供了一种用于形成抗蚀剂下层膜的组合物，其具有相对于其上施加的抗蚀剂的干蚀刻的高选择比。 一种用于形成光刻用抗蚀剂下层膜的组合物，包括：具有式（1）的单元结构的聚硅烷化合物：（其中R 1和R 2独立地为-X-Y（其中X为氧原子，C1- 18亚烷基或-OC n H 2n - （其中n为1至18的整数）和Y为内酯环或金刚烷环），或者R 1和R 2中的一个为-X-Y基团，另一个为 是芳基，甲基，乙基或C 3-6环烷基）; 和有机溶剂。

公开(公告)号：US20110045404A1

公开(公告)日：2011-02-24

申请号：US12673926

申请日：2008-08-26

申请人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

发明人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/11 ,  C08G77/60 ,  C09D183/16 ,  G03F7/0752

摘要： There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.

摘要翻译： 提供一种用于形成可均匀涂布的抗蚀剂下层膜的组合物，并且在热固化期间抑制升华。 还提供了一种用于形成抗蚀剂下层膜的组合物，其具有相对于其上施加的抗蚀剂的干蚀刻的高选择比。 一种用于形成光刻用抗蚀剂下层膜的组合物，包括：具有式（1）的单元结构的聚硅烷化合物：（其中R 1和R 2独立地为-X-Y（其中X为氧原子，C1- 18亚烷基或-OC n H 2n - （其中n为1至18的整数）和Y为内酯环或金刚烷环），或者R 1和R 2中的一个为-X-Y基团，另一个为 是芳基，甲基，乙基或C 3-6环烷基）; 和有机溶剂。