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1.发明授权公开(公告)号：US07842620B2
公开(公告)日：2010-11-30
申请号：US12311742
申请日：2007-10-12
申请人： Satoshi Takei , Makoto Nakajima , Yasushi Sakaida , Hikaru Imamura , Keisuke Hashimoto , Takahiro Kishioka
发明人： Satoshi Takei , Makoto Nakajima , Yasushi Sakaida , Hikaru Imamura , Keisuke Hashimoto , Takahiro Kishioka
IPC分类号： H01L21/31
CPC分类号： H01L21/0332 , G03F7/0752 , G03F7/091 , G03F7/11 , H01L21/0274 , H01L21/31138 , H01L21/31144
摘要： There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).
摘要翻译： 在半导体器件的光刻工艺中提供了用作光致抗蚀剂的下层的层压体，以及通过使用层压体制造半导体器件的方法。 该方法包括：在半导体上依次层叠有机下层膜（A层），含硅硬掩模（B层），有机抗反射膜（C层）和光致抗蚀剂膜（D层）的各层 基质。 该方法还包括：在光致抗蚀剂膜（层D）中形成抗蚀剂图案; 用抗蚀剂图案蚀刻有机抗反射膜（层C）; 用图案化的有机抗反射膜（C层）蚀刻含硅硬掩模（B层）; 用图案化的含硅硬掩模（B层）蚀刻有机下层膜（层A）; 并用图案化的有机下层膜（层A）处理半导体衬底。
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公开(公告)号：US20100022089A1
公开(公告)日：2010-01-28
申请号：US12311742
申请日：2007-10-12
申请人： Satoshi Takei , Makoto Nakajima , Yasushi Sakaida , Hikaru Imamura , Keisuke Hashimoto , Takahiro Kishioka
发明人： Satoshi Takei , Makoto Nakajima , Yasushi Sakaida , Hikaru Imamura , Keisuke Hashimoto , Takahiro Kishioka
IPC分类号： H01L21/311 , G03F7/075
CPC分类号： H01L21/0332 , G03F7/0752 , G03F7/091 , G03F7/11 , H01L21/0274 , H01L21/31138 , H01L21/31144
摘要： There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).
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公开(公告)号：US10509320B2
公开(公告)日：2019-12-17
申请号：US11795520
申请日：2006-01-06
摘要： There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio.The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.
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4.发明申请公开(公告)号：US20080102649A1
公开(公告)日：2008-05-01
申请号：US11795520
申请日：2006-01-06
摘要： There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio.The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.
摘要翻译： 提供了用于光刻的底层涂层形成组合物，其用于制造半导体器件的光刻工艺中，并且与光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合，并且能够使 具有高纵横比的孔的半导体衬底。 用于光刻的下层涂层形成组合物包括具有两个或更多个保护的羧基的化合物，具有两个或更多个环氧基的化合物和溶剂。
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5.发明申请Underlayer Coating Forming Composition for Lithography Containing Polysilane Compound 有权含有聚硅烷化合物的平版印刷用底层涂料组合物公开(公告)号：US20080318158A1
公开(公告)日：2008-12-25
申请号：US11920840
申请日：2006-05-12
CPC分类号： G03F7/0752 , C09D183/16 , G03F7/11 , Y10S430/128
摘要： There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating.The composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst and a solvent. The polysilane compound is preferably a polysilane compound having a bond between silicons at the main chain.
摘要翻译： 提供了用于光刻的底层涂层，其用于制造半导体器件的光刻工艺，其可以用作硬掩模，并且不会与光致抗蚀剂混合; 和用于形成下层涂层的组合物。 该组合物包含聚硅烷化合物，可交联化合物，交联催化剂和溶剂。 聚硅烷化合物优选为在主链上具有硅的键的聚硅烷化合物。
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6.发明授权Underlayer coating forming composition for lithography containing polysilane compound 有权用于含聚硅烷化合物的光刻用底层涂料组合物公开(公告)号：US08163460B2
公开(公告)日：2012-04-24
申请号：US11920840
申请日：2006-05-12
CPC分类号： G03F7/0752 , C09D183/16 , G03F7/11 , Y10S430/128
摘要： There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating.The composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst and a solvent. The polysilane compound is preferably a polysilane compound having a bond between silicons at the main chain.
摘要翻译： 提供了用于光刻的底层涂层，其用于制造半导体器件的光刻工艺，其可以用作硬掩模，并且不会与光致抗蚀剂混合; 和用于形成下层涂层的组合物。 该组合物包含聚硅烷化合物，可交联化合物，交联催化剂和溶剂。 聚硅烷化合物优选为在主链上具有硅的键的聚硅烷化合物。
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7.发明授权Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating 有权用于形成光交联固化抗蚀剂下层涂层的含硅抗蚀剂下层涂料组合物公开(公告)号：US08048615B2
公开(公告)日：2011-11-01
申请号：US12086167
申请日：2006-12-01
CPC分类号： H01L21/02126 , G03F7/0752 , G03F7/11 , H01L21/02282 , H01L21/0273 , H01L21/312
摘要： There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).
摘要翻译： 提供了一种下层涂层，其用作半导体器件制造的光刻工艺中的光致抗蚀剂的底层，并且与根据蚀刻气体的类型的光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合 并且能够使具有高纵横比的孔的半导体衬底的表面变平; 以及用于形成下层涂层的下层涂层形成组合物。 在制造半导体器件的光刻工艺中通过光照射形成用作光致抗蚀剂底层的底层涂层组合物包括含有5〜45质量％的硅原子（A）的聚合性化合物， 光聚合引发剂（B）和溶剂（C）。
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8.发明申请Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating 有权用于形成光交联固化抗蚀剂底层涂层的含硅抗蚀剂底层涂料组合物公开(公告)号：US20090162782A1
公开(公告)日：2009-06-25
申请号：US12086167
申请日：2006-12-01
CPC分类号： H01L21/02126 , G03F7/0752 , G03F7/11 , H01L21/02282 , H01L21/0273 , H01L21/312
摘要： There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating.The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, comprises a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).
摘要翻译： 提供了一种下层涂层，其用作半导体器件制造的光刻工艺中的光致抗蚀剂的底层，并且与根据蚀刻气体的类型的光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合 并且能够使具有高纵横比的孔的半导体衬底的表面变平; 以及用于形成下层涂层的下层涂层形成组合物。 在制造半导体器件的光刻工艺中，通过光照射形成用于光致抗蚀剂的底层的下层涂层的下层涂层形成组合物包含含有5〜45质量％的硅原子（A）的聚合性化合物， 光聚合引发剂（B）和溶剂（C）。
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9.发明授权Composition for forming resist underlayer film for lithography including resin containing alicyclic ring and aromatic ring 有权用于形成光刻用抗蚀剂下层膜的组合物，包括含有脂环族环和芳环的树脂公开(公告)号：US08822138B2
公开(公告)日：2014-09-02
申请号：US13389682
申请日：2010-08-11
IPC分类号： G03F7/11 , H01L21/027 , C08G65/332 , G03F7/09 , G03F7/075
CPC分类号： G03F7/091 , G03F7/0752 , G03F7/094
摘要： There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.
摘要翻译： 提供了具有耐热性和蚀刻选择性的抗蚀剂下层膜。 一种用于形成用于光刻的抗蚀剂下层膜的组合物，其包含脂环式环氧聚合物（A）与稠环芳族羧酸和单环芳族羧酸（B）的反应产物（C）。 脂环族环氧聚合物（A）可以包括式（1）的重复结构单元：（T是在聚合物主链中含有脂环族的重复单元结构，E是环氧基或含有环氧基的有机基 ）。 缩环芳族羧酸和单环芳香族羧酸（B）可以包括B1:B2 = 3:7〜7的摩尔比的缩环芳族羧酸（B1）和单环芳香族羧酸（B2） ：3。 缩环芳族羧酸（B1）可以是9-蒽代羧酸，单环芳香羧酸（B2）可以是苯甲酸。
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10.发明申请COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR LITHOGRAPHY INCLUDING RESIN CONTAINING ALICYCLIC RING AND AROMATIC RING 有权用于形成包含含有环氧树脂和芳族环的树脂的层压薄膜的组合物公开(公告)号：US20120142195A1
公开(公告)日：2012-06-07
申请号：US13389682
申请日：2010-08-11
IPC分类号： H01L21/311 , H01L21/312 , C08G65/332
CPC分类号： G03F7/091 , G03F7/0752 , G03F7/094
摘要： There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.
摘要翻译： 提供了具有耐热性和蚀刻选择性的抗蚀剂下层膜。 一种用于形成用于光刻的抗蚀剂下层膜的组合物，其包含脂环式环氧聚合物（A）与稠环芳族羧酸和单环芳族羧酸（B）的反应产物（C）。 脂环族环氧聚合物（A）可以包括式（1）的重复结构单元：（T是在聚合物主链中含有脂环族的重复单元结构，E是环氧基或含有环氧基的有机基 ）。 缩环芳族羧酸和单环芳香族羧酸（B）可以包括B1:B2 = 3:7〜7的摩尔比的缩环芳族羧酸（B1）和单环芳香族羧酸（B2） ：3。 缩环芳族羧酸（B1）可以是9-蒽代羧酸，单环芳香羧酸（B2）可以是苯甲酸。
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