公开(公告)号：US07842620B2

公开(公告)日：2010-11-30

申请号：US12311742

申请日：2007-10-12

申请人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

发明人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

IPC分类号： H01L21/31

CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144

摘要： There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).

摘要翻译： 在半导体器件的光刻工艺中提供了用作光致抗蚀剂的下层的层压体，以及通过使用层压体制造半导体器件的方法。 该方法包括：在半导体上依次层叠有机下层膜（A层），含硅硬掩模（B层），有机抗反射膜（C层）和光致抗蚀剂膜（D层）的各层 基质。 该方法还包括：在光致抗蚀剂膜（层D）中形成抗蚀剂图案; 用抗蚀剂图案蚀刻有机抗反射膜（层C）; 用图案化的有机抗反射膜（C层）蚀刻含硅硬掩模（B层）; 用图案化的含硅硬掩模（B层）蚀刻有机下层膜（层A）; 并用图案化的有机下层膜（层A）处理半导体衬底。

公开(公告)号：US20100022089A1

公开(公告)日：2010-01-28

申请号：US12311742

申请日：2007-10-12

申请人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

发明人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

IPC分类号： H01L21/311 ,  G03F7/075

CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144

摘要： There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).

公开(公告)号：US08283103B2

公开(公告)日：2012-10-09

申请号：US12673926

申请日：2008-08-26

申请人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

发明人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/40

CPC分类号： G03F7/11 ,  C08G77/60 ,  C09D183/16 ,  G03F7/0752

摘要： There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.

摘要翻译： 提供一种用于形成可均匀涂布的抗蚀剂下层膜的组合物，并且在热固化期间抑制升华。 还提供了一种用于形成抗蚀剂下层膜的组合物，其具有相对于其上施加的抗蚀剂的干蚀刻的高选择比。 一种用于形成光刻用抗蚀剂下层膜的组合物，包括：具有式（1）的单元结构的聚硅烷化合物：（其中R 1和R 2独立地为-X-Y（其中X为氧原子，C1- 18亚烷基或-OC n H 2n - （其中n为1至18的整数）和Y为内酯环或金刚烷环），或者R 1和R 2中的一个为-X-Y基团，另一个为 是芳基，甲基，乙基或C 3-6环烷基）; 和有机溶剂。

公开(公告)号：US20110045404A1

公开(公告)日：2011-02-24

申请号：US12673926

申请日：2008-08-26

申请人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

发明人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/11 ,  C08G77/60 ,  C09D183/16 ,  G03F7/0752

摘要： There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.

摘要翻译： 提供一种用于形成可均匀涂布的抗蚀剂下层膜的组合物，并且在热固化期间抑制升华。 还提供了一种用于形成抗蚀剂下层膜的组合物，其具有相对于其上施加的抗蚀剂的干蚀刻的高选择比。 一种用于形成光刻用抗蚀剂下层膜的组合物，包括：具有式（1）的单元结构的聚硅烷化合物：（其中R 1和R 2独立地为-X-Y（其中X为氧原子，C1- 18亚烷基或-OC n H 2n - （其中n为1至18的整数）和Y为内酯环或金刚烷环），或者R 1和R 2中的一个为-X-Y基团，另一个为 是芳基，甲基，乙基或C 3-6环烷基）; 和有机溶剂。

公开(公告)号：US20080318158A1

公开(公告)日：2008-12-25

申请号：US11920840

申请日：2006-05-12

申请人： Satoshi Takei ,  Keisuke Hashimoto ,  Makoto Nakajima

发明人： Satoshi Takei ,  Keisuke Hashimoto ,  Makoto Nakajima

IPC分类号： G03C1/73 ,  G03F7/20

CPC分类号： G03F7/0752 ,  C09D183/16 ,  G03F7/11 ,  Y10S430/128

摘要： There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating.The composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst and a solvent. The polysilane compound is preferably a polysilane compound having a bond between silicons at the main chain.

摘要翻译： 提供了用于光刻的底层涂层，其用于制造半导体器件的光刻工艺，其可以用作硬掩模，并且不会与光致抗蚀剂混合; 和用于形成下层涂层的组合物。 该组合物包含聚硅烷化合物，可交联化合物，交联催化剂和溶剂。 聚硅烷化合物优选为在主链上具有硅的键的聚硅烷化合物。

公开(公告)号：US08163460B2

公开(公告)日：2012-04-24

申请号：US11920840

申请日：2006-05-12

申请人： Satoshi Takei ,  Keisuke Hashimoto ,  Makoto Nakajima

发明人： Satoshi Takei ,  Keisuke Hashimoto ,  Makoto Nakajima

IPC分类号： G03F7/004 ,  G03F7/075 ,  G03F7/26

CPC分类号： G03F7/0752 ,  C09D183/16 ,  G03F7/11 ,  Y10S430/128

摘要： There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating.The composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst and a solvent. The polysilane compound is preferably a polysilane compound having a bond between silicons at the main chain.

摘要翻译： 提供了用于光刻的底层涂层，其用于制造半导体器件的光刻工艺，其可以用作硬掩模，并且不会与光致抗蚀剂混合; 和用于形成下层涂层的组合物。 该组合物包含聚硅烷化合物，可交联化合物，交联催化剂和溶剂。 聚硅烷化合物优选为在主链上具有硅的键的聚硅烷化合物。

公开(公告)号：US08048615B2

公开(公告)日：2011-11-01

申请号：US12086167

申请日：2006-12-01

申请人： Satoshi Takei ,  Yusuke Horiguchi ,  Keisuke Hashimoto ,  Makoto Nakajima

发明人： Satoshi Takei ,  Yusuke Horiguchi ,  Keisuke Hashimoto ,  Makoto Nakajima

IPC分类号： G03F7/40 ,  G03F7/38 ,  G03F7/11

CPC分类号： H01L21/02126 ,  G03F7/0752 ,  G03F7/11 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/312

摘要： There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).

摘要翻译： 提供了一种下层涂层，其用作半导体器件制造的光刻工艺中的光致抗蚀剂的底层，并且与根据蚀刻气体的类型的光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合 并且能够使具有高纵横比的孔的半导体衬底的表面变平; 以及用于形成下层涂层的下层涂层形成组合物。 在制造半导体器件的光刻工艺中通过光照射形成用作光致抗蚀剂底层的底层涂层组合物包括含有5〜45质量％的硅原子（A）的聚合性化合物， 光聚合引发剂（B）和溶剂（C）。

公开(公告)号：US20090162782A1

公开(公告)日：2009-06-25

申请号：US12086167

申请日：2006-12-01

申请人： Satoshi Takei ,  Yusuke Horiguchi ,  Keisuke Hashimoto ,  Makoto Nakajima

发明人： Satoshi Takei ,  Yusuke Horiguchi ,  Keisuke Hashimoto ,  Makoto Nakajima

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： H01L21/02126 ,  G03F7/0752 ,  G03F7/11 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/312

摘要： There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating.The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, comprises a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).

摘要翻译： 提供了一种下层涂层，其用作半导体器件制造的光刻工艺中的光致抗蚀剂的底层，并且与根据蚀刻气体的类型的光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合 并且能够使具有高纵横比的孔的半导体衬底的表面变平; 以及用于形成下层涂层的下层涂层形成组合物。 在制造半导体器件的光刻工艺中，通过光照射形成用于光致抗蚀剂的底层的下层涂层的下层涂层形成组合物包含含有5〜45质量％的硅原子（A）的聚合性化合物， 光聚合引发剂（B）和溶剂（C）。

公开(公告)号：US09524871B2

公开(公告)日：2016-12-20

申请号：US14236136

申请日：2012-08-10

申请人： Makoto Nakajima ,  Daisuke Sakuma ,  Yuta Kanno ,  Takahiro Kishioka

发明人： Makoto Nakajima ,  Daisuke Sakuma ,  Yuta Kanno ,  Takahiro Kishioka

IPC分类号： H01L21/027 ,  G03F7/11 ,  C07F7/18 ,  G03F7/075 ,  G03F7/09 ,  H01L21/311

CPC分类号： H01L21/0274 ,  C07F7/1804 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0276 ,  H01L21/31133

摘要： A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): [(R1)aSi(R2)(3−a)]b(R3)  Formula (1) [in Formula (1), R3 is an organic group having a sulfonyl group and a light-absorbing group and is bonded to a Si atom through a Si—C bond; R1 is an alkyl, aryl, aralkyl, halogenated alkyl, halogenated aryl, halogenated aralkyl, alkenyl, an organic group having an epoxy, acryloyl, methacryloyl, mercapto, alkoxyaryl, acyloxyaryl, isocyanurate, hydroxy, cyclic amino, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3].

公开(公告)号：US09093279B2

公开(公告)日：2015-07-28

申请号：US14131945

申请日：2012-07-20

申请人： Makoto Nakajima ,  Yuta Kanno ,  Satoshi Takeda ,  Yasushi Sakaida ,  Shuhei Shigaki

发明人： Makoto Nakajima ,  Yuta Kanno ,  Satoshi Takeda ,  Yasushi Sakaida ,  Shuhei Shigaki

IPC分类号： G03F7/26 ,  H01L21/033 ,  G03F7/40 ,  H01L21/311 ,  G03F7/075 ,  G03F7/09

CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/40 ,  H01L21/31111 ,  H01L21/31138

摘要： A thin film forming composition for forming resist underlayer film useable in the production of a semiconductor device, and a resist upper layer film absorbs undesirable UV light with a thin film as an upper layer of the EUV resist before undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. The thin film forming composition useable together with a resist in a lithography process, comprising a mixture of titanium compound (A) selected from: R0aTi(R1)(4-a)  Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B): R2a′R3bSi(R4)4-(a′+b)  Formula (2) a hydrolysis product, or a hydrolysis-condensation product of the mixture, wherein the number of moles of Ti atom is 50% to 90% relative to the total moles in terms of Ti atom and Si atoms in the composition.

摘要翻译： 用于形成用于制造半导体器件的抗蚀剂下层膜的薄膜形成组合物，并且抗蚀剂上层膜在不期望的UV光到达EUV抗蚀剂层之前吸收作为EUV抗蚀剂的上层的薄膜的不期望的UV光 在EUV光刻中，用于EUV抗蚀剂的底层膜（硬掩模），反向材料以及用于溶剂显影用抗蚀剂的下层膜。 该薄膜形成组合物与平版印刷工艺中的抗蚀剂一起使用，包括钛化合物（A）的混合物，其选自：R a Ti（R 1）（4-a）式（1）钛螯合化合物和可水解的钛二聚体 ，和硅化合物（B）：R2a'R3bSi（R4）4-（a'+ b）式（2）水解产物或混合物的水解缩合产物，其中Ti原子的摩尔数为 相对于组合物中Ti原子和Si原子的总摩尔数为50〜90％。