BINNING SYSTEM
    1.
    发明公开
    BINNING SYSTEM 审中-公开

    公开(公告)号:US20240323564A1

    公开(公告)日:2024-09-26

    申请号:US18117439

    申请日:2023-03-04

    摘要: A binning system includes a red-green-blue-infrared (RGB-IR) image sensor including at least one pixel group composed of 2×2 sub-groups, each having 2×2 pixels including two green pixels, one infrared pixels and one red or blue pixel, the 2×2 sub-groups being arranged such that the pixel group is half green, one quarter infrared, one eighth red and one eighth blue; and a digital binning device that performs pixel binning on at least one addend pixel to result in a binned pixel. The binned pixel and the at least one addend pixel are located in a same pixel group.

    Multi-mode image sensor applicable to image sensing and additional detection

    公开(公告)号:US11223763B2

    公开(公告)日:2022-01-11

    申请号:US16784257

    申请日:2020-02-07

    摘要: A multi-mode image sensor applicable to image sensing and additional detection is provided. The multi-mode image sensor includes: a photodiode array, a hybrid type color filter array that is positioned on the photodiode array, and a mode controller. The photodiode array may include a plurality of photodiodes. The hybrid type color filter array may be arranged to perform optical filtering for the photodiode array. The mode controller may activate the photodiode array to output corresponding photo detection results in any of at least two modes. For example, in addition to an image sensing mode, the at least two modes may further include an ambient light sensor (ALS) mode and/or a proximity sensor (PS) mode.

    IMAGE CAPTURING DEVICE FOR AUTO EXPOSURE
    3.
    发明申请

    公开(公告)号:US20200288052A1

    公开(公告)日:2020-09-10

    申请号:US16296247

    申请日:2019-03-08

    IPC分类号: H04N5/235 H04N5/3745

    摘要: An image capturing device including an image sensing circuit and a processing circuit is provided. The processing circuit controls the image sensing circuit to sense at least one partial frame before sensing a full frame. A number of pixels of the partial frame is less than a number of pixels of the full frame, and exposure time of the partial frame is shorter than exposure time of the full frame. The processing circuit performs an automatic exposure procedure according to the partial frame to calculate a fast exposure time and gain, transforms the fast exposure time and gain into exposure time and gain for the full fame, and control the image sensing circuit to sense the full frame accordingly.

    PIXEL CIRCUIT
    4.
    发明申请
    PIXEL CIRCUIT 审中-公开

    公开(公告)号:US20200221047A1

    公开(公告)日:2020-07-09

    申请号:US16826305

    申请日:2020-03-23

    IPC分类号: H04N5/3745 H04N5/378

    摘要: A pixel circuit is disclosed. The pixel circuit includes a photodiode (PD), a transmission circuit, a reset circuit, a signal storage circuit and a buffer circuit. The transmission circuit is coupled between the PD and an ordinary floating diffusion (FD) node. The reset circuit is coupled to the ordinary FD node. The signal storage circuit is coupled to the ordinary FD node. The buffer circuit is coupled to the ordinary FD node. The signal storage circuit may store a PD signal on a specific node having a reduced leakage path in comparison with the ordinary FD node during a holding phase of the pixel circuit, wherein the holding phase is a time interval starting from a first time point at which the PD signal is stored on the specific node and ending at a second time point at which the pixel circuit is selected for performing a read-out operation.

    PIXEL STRUCTURE AND ELECTRIC DEVICE
    5.
    发明申请

    公开(公告)号:US20200052013A1

    公开(公告)日:2020-02-13

    申请号:US16101540

    申请日:2018-08-13

    IPC分类号: H01L27/146

    摘要: A pixel structure of an image sensor is provided and includes following units. A crystalline layer of a first doping type is formed on a substrate. A photodiode region is formed in the crystalline layer. A gate of a source follower transistor is formed on a top surface of the crystalline layer. A reset gate is formed on the top surface of the crystalline layer. A doped region of a second doping type is formed in the crystalline layer and formed between the reset gate and the gate of the source follower. The first doping type is different from the second doping type, and the photodiode region is connected to the doped region under the top surface of the crystalline layer as an anti-blooming path.

    SYSTEM AND METHOD OF ADJUSTING POWER OF A LIGHT SOURCE

    公开(公告)号:US20190289188A1

    公开(公告)日:2019-09-19

    申请号:US15922737

    申请日:2018-03-15

    IPC分类号: H04N5/235 G06T7/521 H04N5/33

    摘要: A system of adjusting power of a light source includes an image sensor for capturing an image and obtaining gain and exposure; a target object detection unit that detects a target object in the image and finds a size of the target object; a distance determination unit that determines distance of the target object according to the size of the target object; a light energy measuring unit that measures light energy according to the gain and the exposure; and a controller that controllably adjusts power of the light source according to the distance and the light energy.

    Image sensor with multi-shared pixel architecture and dual readout path
    8.
    发明授权
    Image sensor with multi-shared pixel architecture and dual readout path 有权
    具有多共享像素架构和双重读出路径的图像传感器

    公开(公告)号:US09467637B2

    公开(公告)日:2016-10-11

    申请号:US14217254

    申请日:2014-03-17

    摘要: An image sensor includes an M-shared pixel architecture, an N-shared pixel architecture and a switch unit, wherein M is an integer not smaller than two and N is an integer not smaller than two. The switch unit is coupled between a floating diffusion node of the M-shared pixel architecture and a floating diffusion node of the N-shared pixel architecture.

    摘要翻译: 图像传感器包括M共享像素架构,N共享像素结构和开关单元,其中M是不小于2的整数,N是不小于2的整数。 开关单元耦合在M共享像素结构的浮动扩散节点和N共享像素架构的浮动扩散节点之间。

    Process of forming a semiconductor device
    9.
    发明授权
    Process of forming a semiconductor device 有权
    形成半导体器件的工艺

    公开(公告)号:US09324762B1

    公开(公告)日:2016-04-26

    申请号:US14669520

    申请日:2015-03-26

    摘要: A process of forming a semiconductor device includes second-type blanket implanting a first-type semiconductor substrate to form a second-type implant layer therein; second-type implanting the semiconductor substrate through a first mask to form second-type wells in a second region of the semiconductor substrate; and first-type implanting the semiconductor substrate through a second mask to form isolations in a first region of the semiconductor substrate and to compensate complementary sub-regions of the second region.

    摘要翻译: 形成半导体器件的工艺包括:第二类型覆盖层注入第一类型半导体衬底以在其中形成第二类型的注入层; 第二类型通过第一掩模注入半导体衬底以在半导体衬底的第二区域中形成第二类型阱; 并且通过第二掩模第一类型注入半导体衬底以在半导体衬底的第一区域中形成隔离并补偿第二区域的互补子区域。