POROUS CARBON AND METHOD OF MANUFACTURING SAME
    1.
    发明申请
    POROUS CARBON AND METHOD OF MANUFACTURING SAME 审中-公开
    多孔碳及其制造方法

    公开(公告)号:US20150344316A1

    公开(公告)日:2015-12-03

    申请号:US14425981

    申请日:2012-09-05

    IPC分类号: C01B35/10

    摘要: A porous carbon and a method of manufacturing the same are provided, that can remarkably improve the performance by increasing the BET specific surface area even when it contains boron.A porous carbon is characterized by having a C—B—O bonding structure existing in at least a surface thereof and having a BET specific surface area of 300 m2/g or greater as determined from a nitrogen adsorption isotherm at 77K. The porous carbon can be manufactured by a method including the steps of: mixing a boric acid and a magnesium citrate together, to prepare a mixture; heat-treating the mixture in a vacuum atmosphere, a non-oxidizing atmosphere, or a reducing atmosphere, to prepare a heat-treated substance; and removing a template from the heat-treated substance.

    摘要翻译: 提供了一种多孔碳及其制造方法,即使在含有硼时,也可以通过提高BET比表面积来显着提高性能。 多孔碳的特征在于,在77K的氮吸附等温线上测定,在至少表面存在C-B-O键结构,BET比表面积为300m 2 / g以上。 多孔碳可以通过包括以下步骤的方法制造:将硼酸和柠檬酸镁混合在一起以制备混合物; 在真空气氛,非氧化性气氛或还原气氛中对混合物进行热处理,制备热处理物质; 并从热处理物质中除去模板。

    Graphene grown substrate and electronic/photonic integrated circuits using same
    6.
    发明授权
    Graphene grown substrate and electronic/photonic integrated circuits using same 失效
    石墨烯生长衬底和电子/光子集成电路使用相同

    公开(公告)号:US08476739B2

    公开(公告)日:2013-07-02

    申请号:US12624437

    申请日:2009-11-24

    IPC分类号: H01L23/58

    摘要: A graphene-on-oxide substrate according to the present invention includes: a substrate having a metal oxide layer formed on its surface; and, formed on the metal oxide layer, a graphene layer including at least one atomic layer of the graphene. The graphene layer is grown generally parallel to the surface of the metal oxide layer, and the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.34 nm or less. Preferably, the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less.

    摘要翻译: 根据本发明的石墨烯氧化物衬底包括:在其表面上形成有金属氧化物层的衬底; 并且在所述金属氧化物层上形成包括所述石墨烯的至少一个原子层的石墨烯层。 石墨烯层通常平行于金属氧化物层的表面生长,并且与金属氧化物层的表面相邻的石墨烯原子层与金属氧化物层的表面原子层之间的原子间距离为0.34 nm以下。 优选地,金属氧化物层的算术平均表面粗糙度Ra为1nm以下。