Graphene grown substrate and electronic/photonic integrated circuits using same
    5.
    发明授权
    Graphene grown substrate and electronic/photonic integrated circuits using same 失效
    石墨烯生长衬底和电子/光子集成电路使用相同

    公开(公告)号:US08476739B2

    公开(公告)日:2013-07-02

    申请号:US12624437

    申请日:2009-11-24

    IPC分类号: H01L23/58

    摘要: A graphene-on-oxide substrate according to the present invention includes: a substrate having a metal oxide layer formed on its surface; and, formed on the metal oxide layer, a graphene layer including at least one atomic layer of the graphene. The graphene layer is grown generally parallel to the surface of the metal oxide layer, and the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.34 nm or less. Preferably, the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less.

    摘要翻译: 根据本发明的石墨烯氧化物衬底包括:在其表面上形成有金属氧化物层的衬底; 并且在所述金属氧化物层上形成包括所述石墨烯的至少一个原子层的石墨烯层。 石墨烯层通常平行于金属氧化物层的表面生长,并且与金属氧化物层的表面相邻的石墨烯原子层与金属氧化物层的表面原子层之间的原子间距离为0.34 nm以下。 优选地,金属氧化物层的算术平均表面粗糙度Ra为1nm以下。