公开(公告)号：US20070250707A1

公开(公告)日：2007-10-25

申请号：US11379585

申请日：2006-04-21

申请人： Hiroyasu NOGUCHI

发明人： Hiroyasu NOGUCHI

IPC分类号： H04L9/00

CPC分类号： G06F16/955

摘要： The invention relates to an electronic device (10) with a Near Field Communication (NFC) interface, and a method for accessing data using NFC. The NFC interface of the electronic device is positioned within communication range of a second NFC interface of a second device, whereby data is transferred to the first electronic device from the second electronic device. The data is sorted into a layered data structure including at least two layers, wherein a first layer includes directly presentable first information, such as brief content description, and a second layer includes a communication address to an information source accessible by means of a network connection to download further information.

摘要翻译： 本发明涉及具有近场通信（NFC）接口的电子设备（10）以及使用NFC访问数据的方法。 电子设备的NFC接口位于第二设备的第二NFC接口的通信范围内，由此数据从第二电子设备传送到第一电子设备。 数据被分类为包括至少两个层的分层数据结构，其中第一层包括直接可呈现的第一信息，诸如简短内容描述，第二层包括通过网络连接可访问的信息源的通信地址 下载更多信息。

公开(公告)号：US5119449A

公开(公告)日：1992-06-02

申请号：US486448

申请日：1990-02-28

申请人： Keiro Komatsu ,  Kunio Tada ,  Hiroyasu Noguchi ,  Akira Suzuki

发明人： Keiro Komatsu ,  Kunio Tada ,  Hiroyasu Noguchi ,  Akira Suzuki

IPC分类号： G02F1/313

CPC分类号： G02F1/3133 ,  G02F2203/06

摘要： An optical directional coupler switch is fabricated from a semiconductor substrate having a (111) plane. Thus, refractive indexes are changed for TE and TM modes by electrooptic effect, although the change amount is different between TE and TM modes. Therefore, a switching operation is realized for an incident light having any polarization. A device length L is preferrably set to meet an equation of "L.sub.TE .ltoreq.L.ltoreq.L.sub.TM " (L.sub.TE and L.sub.TM are coupling lengths for TE and TM modes) to decrease a cross-talk, even if the coupling lengths are different between TE and TM modes, considering that the difference is small.

公开(公告)号：US06177690B1

公开(公告)日：2001-01-23

申请号：US09190436

申请日：1998-11-13

申请人： Hiroyasu Noguchi ,  Eisaku Kato ,  Akira Ishibashi

发明人： Hiroyasu Noguchi ,  Eisaku Kato ,  Akira Ishibashi

IPC分类号： H01L3300

CPC分类号： B82Y20/00 ,  H01L33/0012 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/347

摘要： A semiconductor light emitting device having good characteristics, high reliability and long lifetime includes a p-n junction or p-i-n junction made by locating an active layer in a position inside an n-type doped layer or p-type doped layer sufficiently distant from the depletion layer between the p-type doped layer and the n-type doped layer. When a component of intensity of light from the active layer normal to the active layer is P(x), x for its maximum value Pmax is x=0, and the range of x satisfying P(x)>Pmax/e2 is −Ln −Ln is made lower than doping concentration of the other portion of the n-type doped layer, or doping concentration of at least a part of the p-type doped layer where x

摘要翻译： 具有良好特性，高可靠性和长寿命的半导体发光器件包括通过将有源层定位在n型掺杂层或p型掺杂层内的位于与耗尽层之间充分远的位置的pn结或pin结 p型掺杂层和n型掺杂层。 当来自有源层垂直于有源层的光的强度分量为P（x）时，其最大值Pmax的x为x = 0，满足P（x）> Pmax / e2的x的范围为-Ln 具有pn结的半导体发光器件中的 nn掺杂的至少一部分的掺杂浓度低于n型掺杂的另一部分的掺杂浓度 p型掺杂层的至少一部分的掺杂浓度，其中x

公开(公告)号：US6031244A

公开(公告)日：2000-02-29

申请号：US987105

申请日：1997-12-08

申请人： Hiroyasu Noguchi ,  Kazushi Nakano ,  Akira Ishibashi ,  Atsushi Toda ,  Satoshi Taniguchi ,  Tomonori Hino ,  Eisaku Kato

发明人： Hiroyasu Noguchi ,  Kazushi Nakano ,  Akira Ishibashi ,  Atsushi Toda ,  Satoshi Taniguchi ,  Tomonori Hino ,  Eisaku Kato

IPC分类号： H01L33/28 ,  H01L33/00

CPC分类号： H01L33/28

摘要： A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium, manganese and mercury, and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium. the Group II-VI compound semiconductor forming said active layer contains at least one element selected from the group consisting of magnesium, beryllium and cadmium as the Group II element and tellurium as the Group VI element. At least one antidiffusion layer preventing diffusion of these elements from the active layer is provided on at least one surface of the active layer.

摘要翻译： 发光半导体器件包括：由II-VI族半导体器件组成的有源层，其包含选自锌，镁，铍，镉，锰和汞中的至少一种II族元素，以及至少一种VI族 元素选自氧，硫，硒和碲。 形成所述活性层的II-VI族化合物半导体含有选自镁，铍和镉中的至少一种元素作为第II族元素，碲作为VI族元素。 至少一个防扩散层防止这些元件从活性层扩散到活性层的至少一个表面上。

公开(公告)号：US6020601A

公开(公告)日：2000-02-01

申请号：US189679

申请日：1998-11-13

申请人： Hiroyasu Noguchi ,  Eisaku Kato ,  Masaharu Nagai

发明人： Hiroyasu Noguchi ,  Eisaku Kato ,  Masaharu Nagai

IPC分类号： H01L33/06 ,  H01L33/28 ,  H01S5/00 ,  H01L33/00

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/06

摘要： A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second conductivity type cladding layer (7) made of Zn.sub.x Mg.sub.Y Be.sub.1-x-y S.sub.Z Se.sub.1-z (0

摘要翻译： 提供了一种寿命长且可靠性更高的半导体发光器件，其在基板（1），由Zn x Mg y B e 1制成的第一导电型包覆层（3）和第二导电型包覆层（7） -x-ySZSe1-z（0

公开(公告)号：US6069020A

公开(公告)日：2000-05-30

申请号：US189680

申请日：1998-11-13

申请人： Eisaku Kato ,  Hiroyasu Noguchi ,  Masaharu Nagai

发明人： Eisaku Kato ,  Hiroyasu Noguchi ,  Masaharu Nagai

IPC分类号： H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01S5/00 ,  H01L21/00

CPC分类号： H01L33/28 ,  H01L33/0087 ,  Y10S438/93

摘要： In a method of manufacturing a semiconductor light-emitting device composed of a II-VI compound semiconductor in which at least more than one kind of elements of Zn, Be, Mg, Cd or Hg are used as a II-group element and at least more than one kind of elements of Se, S, Te are used as a VI-group element and which includes first conductivity type and second conductivity type cladding layers and an active layer, a supply ratio VI/II ratio of VI-group element and II-group element required when the active layer is epitaxially deposited is selected to be greater than 1.1 and the active layer is deposited epitaxially. Thus, there may be obtained a highly-reliable semiconductor light-emitting device whose life time is made longer.

摘要翻译： 在制造由II-VI族化合物半导体构成的半导体发光元件的制造方法中，其中使用至少一种以上Zn，Be，Mg，Cd或Hg的元素作为II族元素，至少 使用Se，S，Te中的一种以上的元素作为VI族元素，其包括第一导电型和第二导电型包层和有源层，VI族元素的供给比VI / II比和 当活性层被外延沉积时所需的II族元素选择为大于1.1并且有源层外延沉积。 因此，可以获得其使用寿命更长的高度可靠的半导体发光器件。