Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head
    6.
    发明授权
    Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head 失效
    磁头,磁头制造工艺和安装磁头的磁盘存储装置

    公开(公告)号:US07446981B2

    公开(公告)日:2008-11-04

    申请号:US11492324

    申请日:2006-07-24

    IPC分类号: G11B5/33

    摘要: This invention provides a high-output magnetic head with a high yield, which is capable of minimizing sense current leak or noise caused by a shift of the magnetic wall of an upper shield layer. In one embodiment, the magnetic head is fabricated so that the height of the upper surface of the refill film along the sensor height direction is the same as that of the magnetoresistance layer in a portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer and the distance from the upper surface of the refill film along the sensor height direction to the upper surface of the lower shield layer gradually increases in a region from the portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer to a point at a certain distance away from the portion.

    摘要翻译: 本发明提供了一种高产量的高输出磁头,其能够使由上屏蔽层的磁壁移动引起的感应电流泄漏或噪声最小化。 在一个实施例中,磁头被制造成使得沿着传感器高度方向的补充膜的上表面的高度与沿着传感器高度方向的补充膜接触的部分中的磁阻层的高度相同 与沿着传感器高度方向的再充填膜的上表面的距离相对于下屏蔽层的上表面的距离从沿着传感器高度方向的再填充膜的部分接触的区域逐渐增加 磁阻层到远离该部分一定距离处的点。

    Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head
    8.
    发明申请
    Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head 失效
    磁头,磁头制造工艺和安装磁头的磁盘存储装置

    公开(公告)号:US20070030592A1

    公开(公告)日:2007-02-08

    申请号:US11492324

    申请日:2006-07-24

    IPC分类号: G11B5/33

    摘要: This invention provides a high-output magnetic head with a high yield, which is capable of minimizing sense current leak or noise caused by a shift of the magnetic wall of an upper shield layer. In one embodiment, the magnetic head is fabricated so that the height of the upper surface of the refill film along the sensor height direction is the same as that of the magnetoresistance layer in a portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer and the distance from the upper surface of the refill film along the sensor height direction to the upper surface of the lower shield layer gradually increases in a region from the portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer to a point at a certain distance away from the portion.

    摘要翻译: 本发明提供了一种高产量的高输出磁头,其能够使由上屏蔽层的磁壁移动引起的感应电流泄漏或噪声最小化。 在一个实施例中,磁头被制造成使得沿着传感器高度方向的补充膜的上表面的高度与沿着传感器高度方向的补充膜接触的部分中的磁阻层的高度相同 与沿着传感器高度方向的再充填膜的上表面的距离相对于下屏蔽层的上表面的距离从沿着传感器高度方向的再填充膜的部分接触的区域逐渐增加 磁阻层到远离该部分一定距离处的点。

    Fabrication method for thin film magnetic heads
    9.
    发明授权
    Fabrication method for thin film magnetic heads 失效
    薄膜磁头制造方法

    公开(公告)号:US07536776B2

    公开(公告)日:2009-05-26

    申请号:US11454310

    申请日:2006-06-13

    IPC分类号: G11B5/127 H04R31/00

    摘要: A fabrication method for thin film magnetic heads, comprises, forming a Current Perpendicular to a Plane (CPP) sensor film over a lower shield and a first chemical mechanical polishing (CMP) stop film over the CPP sensor film, etching the CPP sensor film and forming a track width on the CPP sensor film, and covering at least the etching section of the CPP sensor film with an insulating film. The method further comprises forming a CMP dummy film over the insulating film and a second CMP stop film over the CMP dummy film, exposing the first CMP stop film, and removing the first CMP stop film and the second CMP stop film by oxygen reactive ion etching (RIE) and the CMP dummy film by fluorine RIE, and forming an upper shield film over the insulating film and over the CPP sensor film.

    摘要翻译: 一种用于薄膜磁头的制造方法,包括在CPP传感器膜上形成垂直于平面(CPP)传感器膜的电流通过下屏蔽和第一化学机械抛光(CMP)阻挡膜,蚀刻CPP传感器膜和 在CPP传感器膜上形成轨道宽度,并用绝缘膜覆盖至少CPP传感器膜的蚀刻部分。 该方法还包括在绝缘膜上形成CMP虚拟膜,在CMP伪膜上形成第二CMP停止膜,暴露第一CMP停止膜,并通过氧反应离子蚀刻去除第一CMP停止膜和第二CMP停止膜 (RIE)和通过氟RIE的CMP虚拟膜,并且在绝缘膜上和CPP传感器膜上形成上屏蔽膜。