Fabrication method for thin film magnetic heads
    2.
    发明授权
    Fabrication method for thin film magnetic heads 失效
    薄膜磁头制造方法

    公开(公告)号:US07536776B2

    公开(公告)日:2009-05-26

    申请号:US11454310

    申请日:2006-06-13

    IPC分类号: G11B5/127 H04R31/00

    摘要: A fabrication method for thin film magnetic heads, comprises, forming a Current Perpendicular to a Plane (CPP) sensor film over a lower shield and a first chemical mechanical polishing (CMP) stop film over the CPP sensor film, etching the CPP sensor film and forming a track width on the CPP sensor film, and covering at least the etching section of the CPP sensor film with an insulating film. The method further comprises forming a CMP dummy film over the insulating film and a second CMP stop film over the CMP dummy film, exposing the first CMP stop film, and removing the first CMP stop film and the second CMP stop film by oxygen reactive ion etching (RIE) and the CMP dummy film by fluorine RIE, and forming an upper shield film over the insulating film and over the CPP sensor film.

    摘要翻译: 一种用于薄膜磁头的制造方法,包括在CPP传感器膜上形成垂直于平面(CPP)传感器膜的电流通过下屏蔽和第一化学机械抛光(CMP)阻挡膜,蚀刻CPP传感器膜和 在CPP传感器膜上形成轨道宽度,并用绝缘膜覆盖至少CPP传感器膜的蚀刻部分。 该方法还包括在绝缘膜上形成CMP虚拟膜,在CMP伪膜上形成第二CMP停止膜,暴露第一CMP停止膜,并通过氧反应离子蚀刻去除第一CMP停止膜和第二CMP停止膜 (RIE)和通过氟RIE的CMP虚拟膜,并且在绝缘膜上和CPP传感器膜上形成上屏蔽膜。

    Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head
    4.
    发明授权
    Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head 失效
    磁头,磁头制造工艺和安装磁头的磁盘存储装置

    公开(公告)号:US07446981B2

    公开(公告)日:2008-11-04

    申请号:US11492324

    申请日:2006-07-24

    IPC分类号: G11B5/33

    摘要: This invention provides a high-output magnetic head with a high yield, which is capable of minimizing sense current leak or noise caused by a shift of the magnetic wall of an upper shield layer. In one embodiment, the magnetic head is fabricated so that the height of the upper surface of the refill film along the sensor height direction is the same as that of the magnetoresistance layer in a portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer and the distance from the upper surface of the refill film along the sensor height direction to the upper surface of the lower shield layer gradually increases in a region from the portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer to a point at a certain distance away from the portion.

    摘要翻译: 本发明提供了一种高产量的高输出磁头,其能够使由上屏蔽层的磁壁移动引起的感应电流泄漏或噪声最小化。 在一个实施例中,磁头被制造成使得沿着传感器高度方向的补充膜的上表面的高度与沿着传感器高度方向的补充膜接触的部分中的磁阻层的高度相同 与沿着传感器高度方向的再充填膜的上表面的距离相对于下屏蔽层的上表面的距离从沿着传感器高度方向的再填充膜的部分接触的区域逐渐增加 磁阻层到远离该部分一定距离处的点。

    Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head
    6.
    发明申请
    Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head 失效
    磁头,磁头制造工艺和安装磁头的磁盘存储装置

    公开(公告)号:US20070030592A1

    公开(公告)日:2007-02-08

    申请号:US11492324

    申请日:2006-07-24

    IPC分类号: G11B5/33

    摘要: This invention provides a high-output magnetic head with a high yield, which is capable of minimizing sense current leak or noise caused by a shift of the magnetic wall of an upper shield layer. In one embodiment, the magnetic head is fabricated so that the height of the upper surface of the refill film along the sensor height direction is the same as that of the magnetoresistance layer in a portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer and the distance from the upper surface of the refill film along the sensor height direction to the upper surface of the lower shield layer gradually increases in a region from the portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer to a point at a certain distance away from the portion.

    摘要翻译: 本发明提供了一种高产量的高输出磁头,其能够使由上屏蔽层的磁壁移动引起的感应电流泄漏或噪声最小化。 在一个实施例中,磁头被制造成使得沿着传感器高度方向的补充膜的上表面的高度与沿着传感器高度方向的补充膜接触的部分中的磁阻层的高度相同 与沿着传感器高度方向的再充填膜的上表面的距离相对于下屏蔽层的上表面的距离从沿着传感器高度方向的再填充膜的部分接触的区域逐渐增加 磁阻层到远离该部分一定距离处的点。

    Magneto-resistive sensor with stopper layer and fabrication process
    7.
    发明申请
    Magneto-resistive sensor with stopper layer and fabrication process 失效
    具有阻塞层和制造工艺的磁阻传感器

    公开(公告)号:US20060132983A1

    公开(公告)日:2006-06-22

    申请号:US11289798

    申请日:2005-11-29

    IPC分类号: G11B5/33 G11B5/127

    摘要: A high output magneto-resistive sensor is provided by suppressing leftover resist mask after lift-off and generation of a fence, and by making it easy to remove the redepositions deposited on the side wall in the track width direction or on the side wall in the sensor height direction of the magnetoresistive film. As a means to solve a fence and lift-off leftover of a resist in a process for forming a track and a process for forming a sensor height, a stopper layer is provided on the magnetoresistive film and the stopper layer on the refill film, and performing lift-off by CMP. By using a metallic material which has a small CMP polishing rate for at least the first stopper layer, the magnetoresistive film and the first stopper layer can be etched simultaneously and a pattern formed. As a result, decrease of the height of the resist mask by RIE can be suppressed and lift-off leftover can be prevented.

    摘要翻译: 通过在剥离和产生栅栏之后抑制剩余抗蚀剂掩模来提供高输出磁阻传感器,并且通过使得容易地去除在轨道宽度方向上或侧壁上沉积在侧壁上的再沉积 磁阻膜的传感器高度方向。 作为用于形成轨迹的工序中的抗蚀剂的栅栏和剥离残留的手段以及形成传感器高度的工序,在磁阻膜和再填充膜上的阻挡层上设置有阻挡层, 通过CMP执行剥离。 通过使用对于至少第一阻挡层具有小的CMP抛光速率的金属材料,可以同时蚀刻磁阻膜和第一阻挡层并形成图案。 结果,可以抑制RIE的抗蚀剂掩模的高度的降低,并且可以防止剥离残留物。

    Magneto-resistive sensor having small track width and sensor height using stopper layer
    8.
    发明授权
    Magneto-resistive sensor having small track width and sensor height using stopper layer 失效
    磁阻传感器具有小的轨道宽度和传感器高度,使用阻挡层

    公开(公告)号:US07561384B2

    公开(公告)日:2009-07-14

    申请号:US11289798

    申请日:2005-11-29

    IPC分类号: G11B5/39

    摘要: A high output magneto-resistive sensor is provided by suppressing leftover resist mask after lift-off and generation of a fence, and by making it easy to remove the redepositions deposited on the side wall in the track width direction or on the side wall in the sensor height direction of the magnetoresistive film. As a means to solve a fence and lift-off leftover of a resist in a process for forming a track and a process for forming a sensor height, a stopper layer is provided on the magnetoresistive film and the stopper layer on the refill film, and performing lift-off by CMP. By using a metallic material which has a small CMP polishing rate for at least the first stopper layer, the magnetoresistive film and the first stopper layer can be etched simultaneously and a pattern formed. As a result, decrease of the height of the resist mask by RIE can be suppressed and lift-off leftover can be prevented.

    摘要翻译: 通过在剥离和产生栅栏之后抑制剩余抗蚀剂掩模来提供高输出磁阻传感器,并且通过使得容易地去除在轨道宽度方向上或侧壁上沉积在侧壁上的再沉积 磁阻膜的传感器高度方向。 作为用于形成轨迹的工序中的抗蚀剂的栅栏和剥离残留的手段以及形成传感器高度的工序,在磁阻膜和再填充膜上的阻挡层上设置有阻挡层, 通过CMP执行剥离。 通过使用对于至少第一阻挡层具有小的CMP抛光速率的金属材料,可以同时蚀刻磁阻膜和第一阻挡层并形成图案。 结果,可以抑制RIE的抗蚀剂掩模的高度的降低,并且可以防止剥离残留物。

    Magnetoresistive sensor with refill film, fabrication process, and magnetic disk storage apparatus mounting magnetoresistive sensor
    9.
    发明申请
    Magnetoresistive sensor with refill film, fabrication process, and magnetic disk storage apparatus mounting magnetoresistive sensor 审中-公开
    具有补充膜的磁阻传感器,制造工艺和安装磁阻传感器的磁盘存储装置

    公开(公告)号:US20060007603A1

    公开(公告)日:2006-01-12

    申请号:US11177967

    申请日:2005-07-08

    IPC分类号: G11B5/33 G11B5/127 G11B5/147

    摘要: Embodiments of the invention provide a high-output magnetic reading head by making it easy to remove a re-deposited substance that deposits on the side wall surface in the track width direction or the side wall surface in the sensor height direction of a magneto-resistance film in a fabrication process of the magnetic reading head. In one embodiment, a refill film that is fabricated first of a refill film along track width direction or a refill film along sensor height direction is fabricated such that a layer in contact with the magneto-resistance film is formed of a material that is slow in etching rate but possible to minimize deterioration of characteristics due to thermal treatment and a layer(s) other than the layer in contact with the magneto-resistance film is formed of a material(s) that is fast in etching rate.

    摘要翻译: 本发明的实施例提供了一种高输出磁读头,其特征在于,能够容易地除去在磁阻的传感器高度方向上的轨道宽度方向或侧壁面上的侧壁面上沉积的再沉积物质 胶片在磁读头的制作过程中。 在一个实施例中,制造沿着轨道宽度方向首先由补充膜制造的补充膜,或沿着传感器高度方向的补片膜,使得与磁阻膜接触的层由缓慢的材料形成 蚀刻速率,但是可能使由于热处理引起的特性劣化最小化,并且除了与磁阻膜接触的层以外的层由蚀刻速率快的材料形成。

    Magnetoresistive effect head having a free layer and a magnetic domain control layer that applies a magnetic field more strongly in an upper part of the free layer
    10.
    发明授权
    Magnetoresistive effect head having a free layer and a magnetic domain control layer that applies a magnetic field more strongly in an upper part of the free layer 有权
    具有自由层和磁畴控制层的磁阻效应头,其在自由层的上部更强地施加磁场

    公开(公告)号:US08537505B2

    公开(公告)日:2013-09-17

    申请号:US12784405

    申请日:2010-05-20

    IPC分类号: G11B5/39 G11B5/11

    摘要: According to one embodiment, a magnetoresistive effect head includes a lower magnetic shield provided on a substrate, a magnetoresistive effect film laminated from a pinned layer with a pinned direction of magnetization, an intermediate layer, a free layer having a varying direction of magnetization controlled by an applied external magnetic field, a magnetic domain control layer formed with an intervening insulation layer on both sides in a track width direction of the magnetoresistive effect film, an upper magnetic shield, and electrodes for directing sense current flow in a direction perpendicular to a film surface of the magnetoresistive effect film, wherein a magnetic field applied by the magnetic domain control layer to a region away from an ABS of the free layer is at least 1.4 times larger than a magnetic field applied by the magnetic domain control layer to a region near the ABS of the free layer.

    摘要翻译: 根据一个实施例,磁阻效应头包括设置在基板上的下磁屏蔽,从具有钉扎方向的钉扎层层压的磁阻效应膜,中间层,具有变化的磁化方向的自由层, 施加的外部磁场,在磁阻效应膜的磁道宽度方向上在两侧形成有中间绝缘层的磁畴控制层,上磁屏蔽和用于引导垂直于膜的方向的感测电流的电极 磁阻效应膜的表面,其中由磁畴控制层施加到远离自由层的ABS的区域的磁场比由磁畴控制层施加到接近的区域的磁场的至少大1.4倍 ABS的自由层。