公开(公告)号：US20090236307A1

公开(公告)日：2009-09-24

申请号：US12381972

申请日：2009-03-17

申请人： Tomohiro Okada ,  Hisashi Kimura ,  Taku Shintani ,  Tadashi Umezawa

发明人： Tomohiro Okada ,  Hisashi Kimura ,  Taku Shintani ,  Tadashi Umezawa

IPC分类号： B44C1/22

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

摘要： Embodiments of the present invention help to provide a method for manufacturing a perpendicular magnetic recording head including a main magnetic pole having a width that does not generally vary. According to one embodiment, a magnetic film, a first inorganic mask film, an organic film, a second inorganic mask film, and a resist pattern are formed in this order. Reactive ion etching (RIE) is performed using the resist pattern as a mask to etch the second inorganic mask film and the organic film and form a mask for the subsequent step. A flow rate of an Ar gas is then controlled, and ion milling is performed, to correct a difference between the width of the mask located at the central portion of the wafer and the width of the mask located at the outer peripheral portion of the wafer. The magnetic film is processed to have a uniform track width. Ion milling is then performed to form the main magnetic pole having an inverted trapezoidal shape.

摘要翻译： 本发明的实施例有助于提供一种用于制造垂直磁记录头的方法，所述垂直磁记录头包括具有通常不变化的宽度的主磁极。 根据一个实施例，依次形成磁性膜，第一无机掩模膜，有机膜，第二无机掩模膜和抗蚀剂图案。 使用抗蚀剂图案作为掩模进行反应离子蚀刻（RIE），以蚀刻第二无机掩模膜和有机膜并形成用于后续步骤的掩模。 然后控制Ar气体的流量，进行离子铣削，以校正位于晶片中心部分的掩模的宽度与位于晶片外周部分的掩模的宽度之间的差异 。 磁膜被处理成具有均匀的轨迹宽度。 然后进行离子铣削以形成具有倒梯形形状的主磁极。

公开(公告)号：US20060278604A1

公开(公告)日：2006-12-14

申请号：US11454310

申请日：2006-06-13

申请人： Nobuo Yoshida ,  Taku Shintani ,  Hisako Takei

发明人： Nobuo Yoshida ,  Taku Shintani ,  Hisako Takei

IPC分类号： B44C1/22

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3912 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Embodiments of the invention provide a manufacturing method for thin magnetic heads capable of achieving narrow tracks, preventing shape defects and electrical short defects, as well as improving the production yield. Shape defects and short defects can be reduced and a high production yield achieved even with a narrow track width by lift-off technology utilizing planarizing techniques with CMP for forming the track width and stripe height and employing a process and structure for positioning the CMP dummy film.

摘要翻译： 本发明的实施例提供一种能够实现窄轨迹，防止形状缺陷和电短缺陷以及提高产量的薄磁头的制造方法。 可以减少形状缺陷和短缺陷，并且通过使用CMP的平面化技术利用CMP形成轨迹宽度和条纹高度的剥离技术即使具有窄的轨道宽度也被采用，并且采用用于定位CMP虚拟膜的工艺和结构 。

公开(公告)号：US20060132983A1

公开(公告)日：2006-06-22

申请号：US11289798

申请日：2005-11-29

申请人： Masahiro Osugi ,  Taku Shintani ,  Katsuro Watanabe ,  Nobuo Yoshida

发明人： Masahiro Osugi ,  Taku Shintani ,  Katsuro Watanabe ,  Nobuo Yoshida

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/39 ,  G01R33/09 ,  G11B5/3163 ,  G11B5/3169

摘要： A high output magneto-resistive sensor is provided by suppressing leftover resist mask after lift-off and generation of a fence, and by making it easy to remove the redepositions deposited on the side wall in the track width direction or on the side wall in the sensor height direction of the magnetoresistive film. As a means to solve a fence and lift-off leftover of a resist in a process for forming a track and a process for forming a sensor height, a stopper layer is provided on the magnetoresistive film and the stopper layer on the refill film, and performing lift-off by CMP. By using a metallic material which has a small CMP polishing rate for at least the first stopper layer, the magnetoresistive film and the first stopper layer can be etched simultaneously and a pattern formed. As a result, decrease of the height of the resist mask by RIE can be suppressed and lift-off leftover can be prevented.

摘要翻译： 通过在剥离和产生栅栏之后抑制剩余抗蚀剂掩模来提供高输出磁阻传感器，并且通过使得容易地去除在轨道宽度方向上或侧壁上沉积在侧壁上的再沉积 磁阻膜的传感器高度方向。 作为用于形成轨迹的工序中的抗蚀剂的栅栏和剥离残留的手段以及形成传感器高度的工序，在磁阻膜和再填充膜上的阻挡层上设置有阻挡层， 通过CMP执行剥离。 通过使用对于至少第一阻挡层具有小的CMP抛光速率的金属材料，可以同时蚀刻磁阻膜和第一阻挡层并形成图案。 结果，可以抑制RIE的抗蚀剂掩模的高度的降低，并且可以防止剥离残留物。

公开(公告)号：US07031119B2

公开(公告)日：2006-04-18

申请号：US10369682

申请日：2003-02-21

申请人： Katsuro Watanabe ,  Kikuo Kusukawa ,  Taku Shintani ,  Kenichi Meguro

发明人： Katsuro Watanabe ,  Kikuo Kusukawa ,  Taku Shintani ,  Kenichi Meguro

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/102 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/398 ,  G11B5/40 ,  G11B2005/3996

摘要： A high output, magnetoresistive head with a CPP structure is disclosed which reduces or prevents deformation near the air bearing surface of the read element portion layer at the time of air bearing surface processing. In the CPP structure magnetoresistive head, the deformation near the air bearing surface as a result of mechanical polishing during the air bearing surface processing can be reduced by forming deformation prevention layers having a higher shear modulus than a first ferromagnetic layer, and a second ferromagnetic layer between a magnetoresistive film and at least one of a lower shield layer and an upper shield layer.

摘要翻译： 公开了一种具有CPP结构的高输出磁阻头，其在空气轴承表面处理时减小或防止读取元件部分层的空气支承表面附近的变形。 在CPP结构磁阻磁头中，可以通过形成具有比第一铁磁层更高的剪切模量的变形防止层，并且可以减小在空气轴承表面处理期间由于机械抛光而在空气轴承表面附近的变形，并且第二铁磁层 在磁阻膜和下屏蔽层和上屏蔽层中的至少一个之间。

公开(公告)号：US07536776B2

公开(公告)日：2009-05-26

申请号：US11454310

申请日：2006-06-13

申请人： Nobuo Yoshida ,  Taku Shintani ,  Hisako Takei

发明人： Nobuo Yoshida ,  Taku Shintani ,  Hisako Takei

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3912 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A fabrication method for thin film magnetic heads, comprises, forming a Current Perpendicular to a Plane (CPP) sensor film over a lower shield and a first chemical mechanical polishing (CMP) stop film over the CPP sensor film, etching the CPP sensor film and forming a track width on the CPP sensor film, and covering at least the etching section of the CPP sensor film with an insulating film. The method further comprises forming a CMP dummy film over the insulating film and a second CMP stop film over the CMP dummy film, exposing the first CMP stop film, and removing the first CMP stop film and the second CMP stop film by oxygen reactive ion etching (RIE) and the CMP dummy film by fluorine RIE, and forming an upper shield film over the insulating film and over the CPP sensor film.

摘要翻译： 一种用于薄膜磁头的制造方法，包括在CPP传感器膜上形成垂直于平面（CPP）传感器膜的电流通过下屏蔽和第一化学机械抛光（CMP）阻挡膜，蚀刻CPP传感器膜和 在CPP传感器膜上形成轨道宽度，并用绝缘膜覆盖至少CPP传感器膜的蚀刻部分。 该方法还包括在绝缘膜上形成CMP虚拟膜，在CMP伪膜上形成第二CMP停止膜，暴露第一CMP停止膜，并通过氧反应离子蚀刻去除第一CMP停止膜和第二CMP停止膜 （RIE）和通过氟RIE的CMP虚拟膜，并且在绝缘膜上和CPP传感器膜上形成上屏蔽膜。

公开(公告)号：US07154713B2

公开(公告)日：2006-12-26

申请号：US11322262

申请日：2006-01-03

申请人： Katsuro Watanabe ,  Kikuo Kusukawa ,  Taku Shintani ,  Kenichi Meguro

发明人： Katsuro Watanabe ,  Kikuo Kusukawa ,  Taku Shintani ,  Kenichi Meguro

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/102 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/398 ,  G11B5/40 ,  G11B2005/3996

摘要： A high output, magnetoresistive head with a CPP structure is disclosed which reduces or prevents deformation near the air bearing surface of the read element portion layer at the time of air bearing surface processing. In the CPP structure magnetoresistive head, the deformation near the air bearing surface as a result of mechanical polishing during the air bearing surface processing can be reduced by forming deformation prevention layers having a higher shear modulus than the first ferromagnetic layer, and a second ferromagnetic layer between a magnetoresistive film and at least one of a lower shield layer and an upper shield layer.

摘要翻译： 公开了一种具有CPP结构的高输出磁阻头，其在空气轴承表面处理时减小或防止读取元件部分层的空气支承表面附近的变形。 在CPP结构磁阻头中，通过形成具有比第一铁磁层更高的剪切模量的变形防止层，可以减少在空气轴承表面加工期间由于机械抛光而在空气轴承表面附近的变形，以及第二铁磁层 在磁阻膜和下屏蔽层和上屏蔽层中的至少一个之间。

公开(公告)号：US08137571B2

公开(公告)日：2012-03-20

申请号：US12381972

申请日：2009-03-17

申请人： Tomohiro Okada ,  Hisashi Kimura ,  Taku Shintani ,  Tadashi Umezawa

发明人： Tomohiro Okada ,  Hisashi Kimura ,  Taku Shintani ,  Tadashi Umezawa

IPC分类号： B44C1/22

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

摘要： Embodiments of the present invention help to provide a method for manufacturing a perpendicular magnetic recording head including a main magnetic pole having a width that does not generally vary. According to one embodiment, a magnetic film, a first inorganic mask film, an organic film, a second inorganic mask film, and a resist pattern are formed in this order. Reactive ion etching (RIE) is performed using the resist pattern as a mask to etch the second inorganic mask film and the organic film and form a mask for the subsequent step. A flow rate of an Ar gas is then controlled, and ion milling is performed, to correct a difference between the width of the mask located at the central portion of the wafer and the width of the mask located at the outer peripheral portion of the wafer. The magnetic film is processed to have a uniform track width. Ion milling is then performed to form the main magnetic pole having an inverted trapezoidal shape.

摘要翻译： 本发明的实施例有助于提供一种用于制造垂直磁记录头的方法，所述垂直磁记录头包括具有通常不变化的宽度的主磁极。 根据一个实施例，依次形成磁性膜，第一无机掩模膜，有机膜，第二无机掩模膜和抗蚀剂图案。 使用抗蚀剂图案作为掩模进行反应离子蚀刻（RIE），以蚀刻第二无机掩模膜和有机膜并形成用于后续步骤的掩模。 然后控制Ar气体的流量，进行离子铣削，以校正位于晶片中心部分的掩模的宽度与位于晶片外周部分的掩模的宽度之间的差异 。 磁膜被处理成具有均匀的轨迹宽度。 然后进行离子铣削以形成具有倒梯形形状的主磁极。

公开(公告)号：US20070206333A1

公开(公告)日：2007-09-06

申请号：US11706152

申请日：2007-02-13

申请人： Katsuro Watanabe ,  Taku Shintani ,  Kazuhiro Ueda ,  Masahiro Osugi

发明人： Katsuro Watanabe ,  Taku Shintani ,  Kazuhiro Ueda ,  Masahiro Osugi

IPC分类号： G11B5/33

CPC分类号： G11B5/3903 ,  G11B5/3163 ,  G11B5/398

摘要： Embodiments in accordance with the present invention reduce the influence of etching damage at junction edge of a magnetoresistive film in the sensor height direction, lower the deterioration of dielectric breakdown voltage between an upper magnetic shield layer and a lower magnetic shield layer and instability of reproducing property resulting from shield process, and maintain electrostatic capacity to a small value in a CPP magnetoresistive head. In an embodiment of a magnetoresistive head of the present invention, length in the sensor height direction of bottom surface of a pinning layer is longer than the length in the sensor height direction of bottom surface of a first ferromagnetic layer. The angle formed by an edge in the sensor height direction of the pinning layer to the surface extended from a bottom surface of a magnetoresistive film is smaller than the angle formed by an edge in the sensor height direction of a second ferromagnetic layer to the surface extended from a bottom surface of the magnetoresistive film. Height of top surface of a sensor height direction refill film is equal to or higher than the top surface of the magnetoresistive film.

摘要翻译： 根据本发明的实施例减小了在传感器高度方向上的磁阻膜的接合边缘处的蚀刻损伤的影响，降低了上磁屏蔽层和下磁屏蔽层之间的介电击穿电压的劣化以及再现性能的不稳定性 由屏蔽过程产生，并且在CPP磁阻头中将静电容量维持在较小的值。 在本发明的磁阻头的一个实施例中，钉扎层的底表面的传感器高度方向上的长度比第一铁磁层的底表面的传感器高度方向上的长度长。 由钉扎层的传感器高度方向的边缘到从磁阻膜的底面延伸的表面形成的角度小于由第二铁磁层的传感器高度方向上的边缘延伸到表面延伸的角度 从磁阻膜的底表面。 传感器高度方向充填膜的顶表面的高度等于或高于磁阻膜的顶表面。

公开(公告)号：US07881022B2

公开(公告)日：2011-02-01

申请号：US11788038

申请日：2007-04-17

申请人： Hisako Takei ,  Nobuo Yoshida ,  Hiroyuki Hoshiya ,  Taku Shintani

发明人： Hisako Takei ,  Nobuo Yoshida ,  Hiroyuki Hoshiya ,  Taku Shintani

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/398 ,  Y10T29/49021

摘要： Embodiments in accordance with the present invention provide a sensor to produce high output with a small track width. Particular embodiments include forming a magnetoresistive sensor of a read head to be substantially vertical in its upper portion and gently upwardly convexly curved in its lower portion.

摘要翻译： 根据本发明的实施例提供一种用于产生具有小轨道宽度的高输出的传感器。 具体实施例包括形成读头的磁阻传感器在其上部基本垂直并且在其下部中轻轻地向上凸起地弯曲。

公开(公告)号：US07859799B2

公开(公告)日：2010-12-28

申请号：US11706152

申请日：2007-02-13

申请人： Katsuro Watanabe ,  Taku Shintani ,  Kazuhiro Ueda ,  Masahiro Osugi

发明人： Katsuro Watanabe ,  Taku Shintani ,  Kazuhiro Ueda ,  Masahiro Osugi

IPC分类号： G11B5/127

CPC分类号： G11B5/3903 ,  G11B5/3163 ,  G11B5/398

摘要： Embodiments in accordance with the present invention reduce the influence of etching damage at junction edge of a magnetoresistive film in the sensor height direction, lower the deterioration of dielectric breakdown voltage between an upper magnetic shield layer and a lower magnetic shield layer and instability of reproducing property resulting from shield process, and maintain electrostatic capacity to a small value in a CPP magnetoresistive head. In an embodiment of a magnetoresistive head of the present invention, length in the sensor height direction of bottom surface of a pinning layer is longer than the length in the sensor height direction of bottom surface of a first ferromagnetic layer. The angle formed by an edge in the sensor height direction of the pinning layer to the surface extended from a bottom surface of a magnetoresistive film is smaller than the angle formed by an edge in the sensor height direction of a second ferromagnetic layer to the surface extended from a bottom surface of the magnetoresistive film. Height of top surface of a sensor height direction refill film is equal to or higher than the top surface of the magnetoresistive film.

摘要翻译： 根据本发明的实施例减小了在传感器高度方向上的磁阻膜的接合边缘处的蚀刻损伤的影响，降低了上磁屏蔽层和下磁屏蔽层之间的介电击穿电压的劣化以及再现性能的不稳定性 由屏蔽过程产生，并且在CPP磁阻头中将静电容量维持在较小的值。 在本发明的磁阻头的一个实施例中，钉扎层的底表面的传感器高度方向上的长度比第一铁磁层的底表面的传感器高度方向上的长度长。 由钉扎层的传感器高度方向的边缘到从磁阻膜的底面延伸的表面形成的角度小于由第二铁磁层的传感器高度方向上的边缘延伸到表面延伸的角度 从磁阻膜的底表面。 传感器高度方向充填膜的顶表面的高度等于或高于磁阻膜的顶表面。