公开(公告)号：US20130099780A1

公开(公告)日：2013-04-25

申请号：US13701474

申请日：2011-03-04

申请人： Qinli Ma ,  Houfang Liu ,  Xiufeng Han

发明人： Qinli Ma ,  Houfang Liu ,  Xiufeng Han

IPC分类号： G01R33/02

CPC分类号： G01R33/02 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/16 ,  G11C11/161 ,  H01L21/00 ,  H01L43/08 ,  H01L2221/00 ,  H01L2223/00 ,  Y10S977/70

摘要： The invention discloses a magnetic nano-multilayers structure and the method for making it. The multilayer film includes—sequentially from one end to the other end—a substrate, a bottom layer, a magnetic reference layer, a space layer, a magnetic detecting layer and a cap layer. The, up-stated structure is for convert the information of the rotation of the magnetic moment of the magnetic detecting layer into electrical signals. The magnetic detecting layer is of a pinning structure to react to the magnetic field under detection. On the other hand, the invention sandwiches an intervening layer between the AFM and the FM to mitigate the pinning effect from the exchange bias. Moreover, the thickness of the intervening layer is adjustable to control the pinning effect from the exchange bias. The controllability ensures that the magnetic moments of the magnetic reference layer and the magnetic detecting layer remain at right angles to each other when the external field is zero. The invention achieves a GMR or TMR magnetic sensor exhibiting a linear response and by tuning the thickness of the non-magnetic metallic layer, the sensitivity as well as the detecting range of the devices can be tuned easily.

摘要翻译： 本发明公开了一种磁性纳米多层结构及其制造方法。 多层膜从一端到另一端依次包括基板，底层，磁性基准层，空间层，磁性检测层和盖层。 上述结构用于将磁检测层的磁矩的旋转信息转换为电信号。 磁检测层具有与被检测的磁场反应的钉扎结构。 另一方面，本发明在AFM和FM之间夹着中间层，以减轻交换偏压的钉扎效应。 此外，中间层的厚度是可调节的，以控制交换偏压的钉扎效应。 当外场为零时，可控性确保磁参考层和磁检测层的磁矩保持彼此成直角。 本发明实现了具有线性响应的GMR或TMR磁传感器，并且通过调谐非磁性金属层的厚度，可以容易地调节灵敏度以及器件的检测范围。

公开(公告)号：US09568564B2

公开(公告)日：2017-02-14

申请号：US13701474

申请日：2011-03-04

申请人： Qinli Ma ,  Houfang Liu ,  Xiufeng Han

发明人： Qinli Ma ,  Houfang Liu ,  Xiufeng Han

IPC分类号： G01R33/02 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/39 ,  H01L43/08 ,  G11C11/16 ,  B82Y10/00 ,  H01L21/00

CPC分类号： G01R33/02 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/16 ,  G11C11/161 ,  H01L21/00 ,  H01L43/08 ,  H01L2221/00 ,  H01L2223/00 ,  Y10S977/70

摘要： The invention discloses a magnetic nano-multilayers structure and the method for making it. The multilayer film includes—sequentially from one end to the other end—a substrate, a bottom layer, a magnetic reference layer, a space layer, a magnetic detecting layer and a cap layer. The, up-stated structure is for convert the information of the rotation of the magnetic moment of the magnetic detecting layer into electrical signals. The magnetic detecting layer is of a pinning structure to react to the magnetic field under detection. On the other hand, the invention sandwiches an intervening layer between the AFM and the FM to mitigate the pinning effect from the exchange bias. Moreover, the thickness of the intervening layer is adjustable to control the pinning effect from the exchange bias. The controllability ensures that the magnetic moments of the magnetic reference layer and the magnetic detecting layer remain at right angles to each other when the external field is zero. The invention achieves a GMR or TMR magnetic sensor exhibiting a linear response and by tuning the thickness of the non-magnetic metallic layer, the sensitivity as well as the detecting range of the devices can be tuned easily.

摘要翻译： 本发明公开了一种磁性纳米多层结构及其制造方法。 多层膜从一端到另一端依次包括基板，底层，磁性基准层，空间层，磁性检测层和盖层。 上述结构用于将磁检测层的磁矩的旋转信息转换为电信号。 磁检测层具有与被检测的磁场反应的钉扎结构。 另一方面，本发明在AFM和FM之间夹着中间层，以减轻交换偏压的钉扎效应。 此外，中间层的厚度是可调节的，以控制交换偏压的钉扎效应。 当外场为零时，可控性确保磁参考层和磁检测层的磁矩保持彼此成直角。 本发明实现了具有线性响应的GMR或TMR磁传感器，并且通过调谐非磁性金属层的厚度，可以容易地调节灵敏度以及器件的检测范围。