公开(公告)号：US07880138B2

公开(公告)日：2011-02-01

申请号：US11963662

申请日：2007-12-21

申请人： Jae-Seok Lee ,  Heung-Bin Lim ,  Won-Kyung Ryu ,  Seung-Ki Chae ,  Yang-Koo Lee ,  Hun-Jung Yi

发明人： Jae-Seok Lee ,  Heung-Bin Lim ,  Won-Kyung Ryu ,  Seung-Ki Chae ,  Yang-Koo Lee ,  Hun-Jung Yi

IPC分类号： H01J49/26 ,  G01N21/00

CPC分类号： G01N21/94 ,  G01N21/718 ,  G01N21/9501 ,  H01L21/6838 ,  H01L21/68728 ,  H01L21/68785

摘要： Provided is an apparatus and method for analyzing contaminants on a wafer. The apparatus includes: a wafer holder for supporting a wafer on which contaminants to be analyzed are located, a laser ablation device for irradiating a laser to the wafer to extract a discrete specimen from the wafer, an analysis cell for collecting a discrete specimen from the surface of the wafer by irradiating the laser, and an analysis device connected to the analysis cell for analyzing contaminants from the collected discrete specimen.

摘要翻译： 提供了一种用于分析晶片上的污染物的装置和方法。 该装置包括：晶片保持器，用于支撑要分析的污染物所在的晶片;激光烧蚀装置，用于将激光照射到晶片以从晶片提取离散的样本;分析单元，用于从 通过照射激光的晶片的表面，以及连接到分析单元的分析装置，用于分析来自收集的离散样本的污染物。

公开(公告)号：US07556712B2

公开(公告)日：2009-07-07

申请号：US11566624

申请日：2006-12-04

申请人： Hun-Jung Yi ,  Seung-Ki Chae

发明人： Hun-Jung Yi ,  Seung-Ki Chae

IPC分类号： C23F1/00 ,  H01L21/00

CPC分类号： G03F7/2022 ,  G03F7/70925 ,  H01L21/67028 ,  H01L21/67225

摘要： A photolithography process may be carried out after cleaning the backside of a wafer by means of an apparatus that includes an illumination module for conducting an optical illumination operation of photolithography to the front side of the wafer, and a cleaning module for conducting a cleaning operation on the wafer backside. Providing the capability of removing particles from the wafer backside and eliminating defocusing effects due to wafer chucking errors, these and other embodiments improve reliability of the photolithography process, as well as productivity and yields for the semiconductor devices.

摘要翻译： 可以通过包括用于将光刻的光学照明操作进行到晶片前侧进行照明的照明模块的装置清洁晶片的背面之后进行光刻工艺，以及用于进行清洁操作的清洁模块 晶圆背面。 提供从晶片背面去除颗粒的能力并消除由于晶片夹紧误差引起的散焦效应，这些和其它实施例提高了光刻工艺的可靠性，以及半导体器件的生产率和产量。

公开(公告)号：US07943562B2

公开(公告)日：2011-05-17

申请号：US12332568

申请日：2008-12-11

申请人： Da-Hee Lee ,  Jung-Dae Park ,  Hun-Jung Yi ,  Tae-Hyo Choi

发明人： Da-Hee Lee ,  Jung-Dae Park ,  Hun-Jung Yi ,  Tae-Hyo Choi

IPC分类号： C11D7/32

CPC分类号： C11D3/0073 ,  C11D7/10 ,  C11D7/3209 ,  C11D11/0047 ,  H01L21/02071

摘要： In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.

摘要翻译： 在清洁组合物中，清洁半导体衬底的方法和制造半导体器件的方法，所述清洁组合物包括约0.5至约5重量％的有机氢氧化铵化合物，约0.1至约3重量％的 氟化物化合物，约0.1至约3重量％的缓冲剂，约0.5至约5重量％的蚀刻促进剂，剩余的水。

公开(公告)号：US20070037400A1

公开(公告)日：2007-02-15

申请号：US11495706

申请日：2006-07-31

申请人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

发明人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32134

摘要： Embodiments of the invention provide a composition adapted to remove polysilicon. The composition comprises about 1.0 to 10 percent by weight of alkylammonium hydroxide, about 0.1 to 5.0 percent by weight of hydrogen peroxide, and water.

摘要翻译： 本发明的实施方案提供了适于去除多晶硅的组合物。 该组合物包含约1.0-10重量％的烷基氢氧化铵，约0.1-5.0重量％的过氧化氢和水。

公开(公告)号：US07100306B2

公开(公告)日：2006-09-05

申请号：US11234033

申请日：2005-09-24

申请人： Pil-Kwon Jun ,  Sang-oh Park ,  Yong-Kyun Ko ,  Hun-Jung Yi

发明人： Pil-Kwon Jun ,  Sang-oh Park ,  Yong-Kyun Ko ,  Hun-Jung Yi

IPC分类号： F26B3/08

CPC分类号： H01L21/67326 ,  B65D25/103 ,  H01L21/67057 ,  Y10S134/902

摘要： A wafer guide includes a horizontal support panel and at least three vertical panels attached on one surface of the support panel. Each of the vertical panels has a vertical body panel and a plurality of protrusions upwardly extended from a top surface of the vertical body panel. Gap regions between the protrusions act as slots for holding wafers. Sidewalls of the slots have a convex shaped profile when viewed from a top view, and bottom surfaces of the slots also have a convex shaped profile when viewed from a cross sectional view that crosses the vertical panels.

摘要翻译： 晶片引导件包括水平支撑板和附接在支撑板的一个表面上的至少三个垂直板。 每个垂直面板具有垂直的主体面板和从垂直主体面板的顶面向上延伸的多个突起。 突起之间的间隙区域用作保持晶片的槽。 当从顶视图观察时，槽的侧壁具有凸形的轮廓，并且当从横切垂直板的横截面视图观察时，槽的底表面也具有凸形轮廓。

公开(公告)号：US20050091871A1

公开(公告)日：2005-05-05

申请号：US10831175

申请日：2004-04-26

申请人： Hun-Jung Yi ,  Sang-Oh Park

发明人： Hun-Jung Yi ,  Sang-Oh Park

IPC分类号： H01L21/304 ,  H01L21/00 ,  F26B3/34

CPC分类号： H01L21/67034

摘要： A drying apparatus and method of drying a wafer including supplying a drying material for drying a wafer and controlling a flow of the drying material to uniformly or substantially dry the wafer. The flow of the drying material may be controlled by a vent unit including at least one part for controlling the flow of the drying material to uniformly or substantially uniformly dry the wafer.

摘要翻译： 一种干燥装置和干燥晶片的方法，包括提供用于干燥晶片的干燥材料并控制干燥材料的流动以使晶片均匀或基本干燥。 干燥材料的流动可以由包括至少一个部分的排气单元控制，用于控制干燥材料的流动以均匀地或基本均匀地干燥晶片。

公开(公告)号：US07959884B2

公开(公告)日：2011-06-14

申请号：US12619144

申请日：2009-11-16

申请人： Hun-Jung Yi ,  Seung-Ki Cha ,  Chang-su Lim

发明人： Hun-Jung Yi ,  Seung-Ki Cha ,  Chang-su Lim

IPC分类号： B01D53/56 ,  B01D53/74

CPC分类号： B01D53/56 ,  B01D46/0032 ,  B01D46/10 ,  B01D47/05 ,  B01D50/006 ,  B01D53/32 ,  B01D2257/404 ,  B01D2259/818 ,  Y10S423/01

摘要： An air purifying apparatus includes an air flow generating device for generating a flow of air, a nozzle spraying water to the air flowing through the air flow generating device, a plasma module performing a plasma reaction on the air containing the water sprayed from the nozzle, and oxidizing NOx in the air and converting it into NO3, an eliminator eliminating the NO3 converted in the plasma module and the water contained in the air and passing pure air through the eliminator and out of the air purifying apparatus and a water tank storing the water received from the eliminator, thereby heightening the removal efficiency of NOx from the air.

摘要翻译： 空气净化装置包括用于产生空气流的空气流产生装置，向流过空气流产生装置的空气喷射水的喷嘴，对包含从喷嘴喷射的水的空气进行等离子体反应的等离子体模块， 并且将空气中的NOx氧化并将其转化为NO 3，除去在等离子体组件中转化的NO 3和空气中所含的水的消除器，并将纯净空气通过除气器排出空气净化装置和储存水的水箱 从消除器接收，从而提高NOx从空气中的去除效率。

公开(公告)号：US07386944B2

公开(公告)日：2008-06-17

申请号：US10983023

申请日：2004-11-05

申请人： Hun-Jung Yi ,  Won-Young Chung ,  Sang-Oh Park ,  Ye-Ro Lee

发明人： Hun-Jung Yi ,  Won-Young Chung ,  Sang-Oh Park ,  Ye-Ro Lee

IPC分类号： F26B21/06 ,  F26B21/12 ,  B08B3/00

CPC分类号： H01L21/67051 ,  H01L21/67028 ,  Y10S134/902

摘要： A method an apparatus for drying a wafer, and an apparatus for cleaning and drying a wafer are provided. In the apparatus for cleaning and drying a wafer, the wafer is dipped into a cleaning solution in a cleaning tank. The wafer is then dried using a drying gas in a drying chamber disposed over the cleaning tank. A shutter separates the cleaning tank from the drying tank. A wafer boat moves the wafer vertically between the cleaning tank and the drying tank. Nozzles for providing the cleaning solution onto the wafer are disposed at both inner sides of the drying tank. The nozzles are connected to a drying gas supply unit to alternately and periodically provide the drying gas onto the wafer.

摘要翻译： 提供了一种用于干燥晶片的设备以及用于清洁和干燥晶片的设备。 在用于清洗和干燥晶片的装置中，将晶片浸入清洗槽中的清洁溶液中。 然后使用设置在清洁槽上的干燥室中的干燥气体干燥晶片。 快门将清洁箱与干燥箱分开。 晶片舟将晶片在清洁槽和干燥箱之间垂直移动。 用于在晶片上提供清洁溶液的喷嘴设置在干燥箱的两侧。 喷嘴连接到干燥气体供应单元以交替地并周期性地将干燥气体提供到晶片上。

公开(公告)号：US07351667B2

公开(公告)日：2008-04-01

申请号：US11580937

申请日：2006-10-16

申请人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

发明人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

IPC分类号： H01L21/469

CPC分类号： H01L27/10855 ,  H01L21/31111 ,  H01L21/76816

摘要： An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

摘要翻译： 在用于扩大通过氧化硅层形成的开口的工艺中可以使用用于氧化硅的蚀刻溶液。 蚀刻溶液包含约0.2至约5.0重量％的氟化氢溶液，约0.05至约20.0重量％的氟化铵溶液，约40.0至约70.0重量％的烷基氢氧化物溶液和剩余的水。 蚀刻溶液可以蚀刻氧化硅层而不损坏由开口暴露的金属硅化物层。

公开(公告)号：US20060231125A1

公开(公告)日：2006-10-19

申请号：US11377963

申请日：2006-03-17

申请人： Hun-Jung Yi

发明人： Hun-Jung Yi

IPC分类号： C23G1/00 ,  B08B3/00 ,  B08B7/00

CPC分类号： H01L21/02054 ,  H01L21/67028 ,  H01L21/67051

摘要： A cleaning apparatus is provided comprising a process chamber defining a work space, a supporter apparatus for rotating a wafer, the supporter apparatus being located in the work space and the wafer being mounted on the supporter apparatus such that a processing surface of the wafer is upwardly facing, an organic solvent supplying nozzle for supplying an organic solvent into the work space to the processing surface of the wafer mounted on the supporter apparatus, and a dry gas supplying nozzle for supplying an organic solvent vapor into the work space and forming an organic solvent atmosphere therein. Thus, water remaining on the wafer may be readily removed.

摘要翻译： 提供一种清洁装置，其包括限定工作空间的处理室，用于旋转晶片的支撑装置，所述支撑装置位于所述工作空间中，并且所述晶片安装在所述支撑装置上，使得所述晶片的处理表面向上 面向有机溶剂供给喷嘴，用于将有机溶剂供给到安装在支撑装置上的晶片的处理表面的工作空间，以及用于将有机溶剂蒸气供给到工作空间中并形成有机溶剂的干燥气体供给喷嘴 气氛。 因此，可以容易地去除残留在晶片上的水。