公开(公告)号：US20070252993A1

公开(公告)日：2007-11-01

申请号：US11819168

申请日：2007-06-25

申请人： Kyu-Hong Lim ,  Byung-Am Lee ,  Joo-Woo Kim ,  Chang-Hoon Lee

发明人： Kyu-Hong Lim ,  Byung-Am Lee ,  Joo-Woo Kim ,  Chang-Hoon Lee

IPC分类号： G01B11/00

CPC分类号： G03F9/7092 ,  G03F7/70616

摘要： In a method of aligning a wafer, which is capable of precisely and rapidly aligning the wafer, and a wafer alignment apparatus using the method of aligning the wafer, a first wafer is aligned to form a first template pattern corresponding to an image of the first wafer. Image data of a second wafer is inputted. A kind of the second wafer is different from that of the first wafer. A second template pattern is formed by transforming the first template pattern in response to the image data of the second wafer. The second wafer is then aligned in response to the second template pattern. Accordingly, the template pattern is formed using the image data to align the wafer although wafers having different images are inspected, thereby rapidly forming the template pattern.

摘要翻译： 在使用能够精确且快速地对准晶片的晶片和使用对准晶片的方法的晶片对准装置的对准方法中，对准第一晶片以形成对应于第一晶片的图像的第一模板图案 晶圆。 输入第二晶片的图像数据。 一种第二晶片与第一晶片不同。 通过响应于第二晶片的图像数据变换第一模板图案来形成第二模板图案。 然后响应于第二模板图案对准第二晶片。 因此，使用图像数据形成模板图案，以对晶片进行对准，尽管检查具有不同图像的晶片，从而快速形成模板图案。

公开(公告)号：US07235411B2

公开(公告)日：2007-06-26

申请号：US10883711

申请日：2004-07-06

申请人： Kyu-Hong Lim ,  Byung-Am Lee ,  Joo-Woo Kim ,  Chang-Hoon Lee

发明人： Kyu-Hong Lim ,  Byung-Am Lee ,  Joo-Woo Kim ,  Chang-Hoon Lee

IPC分类号： H01L21/00

CPC分类号： G03F9/7092 ,  G03F7/70616

摘要： In a method of aligning a wafer, which is capable of precisely and rapidly aligning the wafer, and a wafer alignment apparatus using the method of aligning the wafer, a first wafer is aligned to form a first template pattern corresponding to an image of the first wafer. Image data of a second wafer is inputted. A kind of the second wafer is different from that of the first wafer. A second template pattern is formed by transforming the first template pattern in response to the image data of the second wafer. The second wafer is then aligned in response to the second template pattern. Accordingly, the template pattern is formed using the image data to align the wafer although wafers having different images are inspected, thereby rapidly forming the template pattern.

摘要翻译： 在使用能够精确且快速地对准晶片的晶片和使用对准晶片的方法的晶片对准装置的对准方法中，对准第一晶片以形成对应于第一晶片的图像的第一模板图案 晶圆。 输入第二晶片的图像数据。 一种第二晶片与第一晶片不同。 通过响应于第二晶片的图像数据变换第一模板图案来形成第二模板图案。 然后响应于第二模板图案对准第二晶片。 因此，使用图像数据形成模板图案，以对晶片进行对准，尽管检查具有不同图像的晶片，从而快速形成模板图案。

公开(公告)号：US20050009214A1

公开(公告)日：2005-01-13

申请号：US10883711

申请日：2004-07-06

申请人： Kyu-Hong Lim ,  Byung-Am Lee ,  Joo-Woo Kim ,  Chang-Hoon Lee

发明人： Kyu-Hong Lim ,  Byung-Am Lee ,  Joo-Woo Kim ,  Chang-Hoon Lee

IPC分类号： H01L21/027 ,  G03F7/20 ,  G03F9/00 ,  H01L21/00 ,  H01L21/76

CPC分类号： G03F9/7092 ,  G03F7/70616

摘要： In a method of aligning a wafer, which is capable of precisely and rapidly aligning the wafer, and a wafer alignment apparatus using the method of aligning the wafer, a first wafer is aligned to form a first template pattern corresponding to an image of the first wafer. Image data of a second wafer is inputted. A kind of the second wafer is different from that of the first wafer. A second template pattern is formed by transforming the first template pattern in response to the image data of the second wafer. The second wafer is then aligned in response to the second template pattern. Accordingly, the template pattern is formed using the image data to align the wafer although wafers having different images are inspected, thereby rapidly forming the template pattern.

摘要翻译： 在使用能够精确且快速地对准晶片的晶片和使用对准晶片的方法的晶片对准装置的对准方法中，对准第一晶片以形成对应于第一晶片的图像的第一模板图案 晶圆。 输入第二晶片的图像数据。 一种第二晶片与第一晶片不同。 通过响应于第二晶片的图像数据变换第一模板图案来形成第二模板图案。 然后响应于第二模板图案对准第二晶片。 因此，使用图像数据形成模板图案，以对晶片进行对准，尽管检查具有不同图像的晶片，从而快速形成模板图案。

公开(公告)号：US06449037B2

公开(公告)日：2002-09-10

申请号：US09864398

申请日：2001-05-25

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： G01N2100

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

摘要翻译： 方法和装置检测在晶片表面存在缺陷，即微划痕。 光在晶片的表面上的介质上被投射到光不被可能位于介质下方的另一层反射的角度。 由晶片表面反射的光被转换为电信号，但是由于表面散射的任何光被尽可能地排除，从而有助于信号的形成。 电信号对应于从晶片表面反射的光的强度。 当光在晶片上扫描时，将电信号的值进行比较，以确定介质中是否存在缺陷。 因为投射到晶片表面上的光将被诸如微划痕的缺陷所散射，所以可以成功监测晶片是否存在这种微划痕。 特别地，可以检测到在介质中形成的微划痕的缺陷，而不管诸如图案层的介质之下的结构如何。

公开(公告)号：US20070025609A1

公开(公告)日：2007-02-01

申请号：US11460574

申请日：2006-07-27

申请人： Sung-Gon RYU ,  Kyu-Hong LIM ,  Hyung-Suk CHO ,  Sung-Kweon KIM

发明人： Sung-Gon RYU ,  Kyu-Hong LIM ,  Hyung-Suk CHO ,  Sung-Kweon KIM

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G01N21/8422 ,  G01N21/95607 ,  G01N21/95684 ,  G06T2207/30148

摘要： In a method of detecting a defect of the pattern in a semiconductor device, the pattern to be inspected is formed on a substrate, and then a thin film is continuously formed on the pattern, the defect of the pattern and the substrate to accurately detect the defect. The thin film has a reflectivity substantially greater than that of the pattern. The defect of the pattern is detected by inspecting the substrate having the thin film covering the pattern and the defect. A minute defect of the pattern such as residues or a micro bridge may be readily detected.

摘要翻译： 在检测半导体器件中的图案的缺陷的方法中，将要检查的图案形成在基板上，然后在图案上连续地形成薄膜，图案的缺陷和基板，以精确地检测 缺陷。 薄膜的反射率显着大于图案的反射率。 通过检查具有覆盖图案和缺陷的薄膜的基板来检测图案的缺陷。 可以容易地检测到诸如残留物或微桥的图案的微小缺陷。

公开(公告)号：US06528333B1

公开(公告)日：2003-03-04

申请号：US09584671

申请日：2000-06-01

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： H01L2166

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

公开(公告)号：US5926691A

公开(公告)日：1999-07-20

申请号：US846083

申请日：1997-04-25

申请人： Kyu-hong Lim ,  Bong-su Kim

发明人： Kyu-hong Lim ,  Bong-su Kim

IPC分类号： G01N23/223 ,  G01N1/00 ,  G01N21/35 ,  G01N21/3563 ,  H01L21/316 ,  H01L21/66 ,  H01L23/544 ,  G01R31/26 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L22/34 ,  H01L21/02129 ,  H01L21/02362 ,  H01L21/31625 ,  H01L22/12

摘要： Borophosphosilicate glass (BPSG) films having impurity concentrations which remain stable over time are fabricated by removing moisture from a BPSG film and forming a shield film on the BPSG film to reduce reintroduction of moisture into the BPSG film. Moisture is removed from the BPSG film by annealing the BPSG film. The BPSG film may be used to test impurity concentrations in BPSG films of microelectronic devices. The BPSG films may also be used in the manufacture of microelectronic devices.

摘要翻译： 通过从BPSG膜去除水分并在BPSG膜上形成屏蔽膜来制造具有随时间保持稳定的杂质浓度的硼磷硅玻璃（BPSG）膜，以减少水分进入BPSG膜的再次引入。 通过退火BPSG膜从BPSG膜去除水分。 BPSG膜可用于测试微电子器件的BPSG膜中的杂质浓度。 BPSG膜也可用于制造微电子器件。