Abstract:
Methods for forming a field effect transistor are disclosed. An illustrated method comprises: forming a gate electrode on a substrate; and forming a nitride layer on at least a part of the gate electrode and the substrate.
Abstract:
An apparatus for restoring a symbol timing of a signal received at a receiving side of a digital communication system. The invention includes a first sampling section which is applied with a received signal, for sampling in accordance with a first frequency higher than the sampling frequency possessed by the received signal; a second sampling section which is applied with an output signal of the first sampling section, for sampling in accordance with a first clock signal applied from a symbol timing restoring circuit; an equalizer which is applied with the output signal of the second sampling section for equalizing; a third sampling section which is applied with the output signal of the equalizer, for sampling in accordance with a second clock signal applied from the symbol timing restoring circuit; and a symbol timing restoring circuit which is applied with the output signal of the second sampling section for detecting a present sampling position and generating the first clock signal and the second clock signal variably changed with the sampling position based on the detected present sampling position and an optimum sampling position. Accordingly, a tracing of an optimum sampling position is possible, and further a sampling position tracing even with respect to the position between samples is possible, so that more exact restoration of the symbol data is possible.
Abstract:
Methods for fabricating flip-chips are disclosed. In an exemplary method, a flip-chip is mounted, active-surface downward, onto a substrate such that a back-side of the flip-chip is facing upward and electrical connections are made between the chip and an upward-facing surface of the substrate. An adhesive is applied to selected regions not occupied by the flip-chip. A heat-spreader is applied to contact the applied adhesive without contacting the back-side of the flip-chip, leaving a gap between the heat-spreader and the back-side of the flip-chip. The heat-spreader defines at least one through-hole that, when the heat-spreader is placed, is within a perimeter of the flip-chip. The adhesive is cured, and a thermal-insulating material (TIM) is applied through the at least one through-hole so as to fill the gap with the TIM. The methods substantially reduce the probability of die damage that otherwise occurs during attachment of heat-spreaders.
Abstract:
A decoding method and apparatus having an optimum decoding path includes a Viterbi decoder having an overlapping function in which the input signal is moved in units of the window movement distance of at least one symbol and the code sequence is decoded in units representing a decoding depth, so that overlap in the decoded data occurs. Then, the output of the Viterbi decoder with the overlap function is stored in a memory. A control signal generator controls the positions of the data to be output from the memory according to the output of a counter receiving the decoded data. The most frequent data out of all data supplied to a comparator is selected as an optimum decoding path. Thus, the error associated with wrong path selection, e.g., when the data is wrongly decoded due to the error generated by the noise added during transmission, can be reduced.
Abstract:
A method of fabricating a magnetic memory device is provided. The method may include sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate, forming a mask pattern on the second magnetic layer to expose a portion of the second magnetic layer, forming a capping insulating layer on a sidewall of the mask pattern and the portion of the second magnetic layer, injecting an oxygen ion into the portion of the second magnetic layer through the capping insulating layer to form an oxide layer, anisotropically etching the capping insulating layer to form a capping spacer, and patterning the oxide layer, the tunnel barrier layer, and the first magnetic layer using the mask pattern and the capping spacer.
Abstract:
Methods for fabricating flip-chips are disclosed. In an exemplary method, a flip-chip is mounted, active-surface downward, onto a substrate such that a back-side of the flip-chip is facing upward and electrical connections are made between the chip and an upward-facing surface of the substrate. An adhesive is applied to selected regions not occupied by the flip-chip. A heat-spreader is applied to contact the applied adhesive without contacting the back-side of the flip-chip, leaving a gap between the heat-spreader and the back-side of the flip-chip. The heat-spreader defines at least one through-hole that, when the heat-spreader is placed, is within a perimeter of the flip-chip. The adhesive is cured, and a thermal-insulating material (TIM) is applied through the at least one through-hole so as to fill the gap with the TIM. The methods substantially reduce the probability of die damage that otherwise occurs during attachment of heat-spreaders.
Abstract:
A method of fabricating a magnetic memory device is provided. The method may include sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate, forming a mask pattern on the second magnetic layer to expose a portion of the second magnetic layer, forming a capping insulating layer on a sidewall of the mask pattern and the portion of the second magnetic layer, injecting an oxygen ion into the portion of the second magnetic layer through the capping insulating layer to form an oxide layer, anisotropically etching the capping insulating layer to form a capping spacer, and patterning the oxide layer, the tunnel barrier layer, and the first magnetic layer using the mask pattern and the capping spacer.
Abstract:
Methods for forming a field effect transistor are disclosed. An illustrated method comprises: forming a gate electrode on a substrate; and forming a nitride layer on at least a part of the gate electrode and the substrate.
Abstract:
An apparatus for restoring a symbol timing of a signal received at a receiving side of a digital communication system. The invention includes a first sampling section which is applied with a received signal, for sampling in accordance with a first frequency higher than the sampling frequency possessed by the received signal; a second sampling section which is applied with an output signal of the first sampling section, for sampling in accordance with a first clock signal applied from a symbol timing restoring circuit; an equalizer which is applied with the output signal of the second sampling section for equalizing; a third sampling section which is applied with the output signal of the equalizer, for sampling in accordance with a second clock signal applied from the symbol timing restoring circuit; and a symbol timing restoring circuit which is applied with the output signal of the second sampling section for detecting a present sampling position and generating the first clock signal and the second clock signal variably changed with the sampling position based on the detected present sampling position and an optimum sampling position. Accordingly, a tracing of an optimum sampling position is possible, and further a sampling position tracing even with respect to the position between samples is possible, so that more exact restoration of the symbol data is possible.