Method and arrangement for the suppression of debris in the generation of short-wavelength radiation based on a plasma
    1.
    发明授权
    Method and arrangement for the suppression of debris in the generation of short-wavelength radiation based on a plasma 有权
    在基于等离子体的短波长辐射的产生中抑制碎屑的方法和装置

    公开(公告)号:US07365350B2

    公开(公告)日:2008-04-29

    申请号:US11380487

    申请日:2006-04-27

    IPC分类号: H04H1/04

    CPC分类号: G03F7/70916 G03F7/70033

    摘要: The invention is directed to a method and arrangements for the suppression of debris in short-wavelength radiation sources based on a plasma, particularly for EUV sources for semiconductor lithography. The object of the invention is to find a novel possibility for suppressing the particle flow (debris) from a plasma which keeps the debris away from primarily optical components located downstream without excessive attenuation of the desired radiation emitted from the plasma. According to the invention, this object is met in that a buffer gas is injected inside the filter structure of the debris filter lateral to openings that are provided for passing the radiation. The filter structure generates a flow resistance in direction of the plasma and in direction of propagation of the radiation so that an increased gas pressure of buffer gas remains limited to a defined volume layer in the debris filter relative to the pressure in the vacuum chamber, and the buffer gas exiting from the filter structure of the debris filter is sucked out of the vacuum chamber by vacuum pumps.

    摘要翻译: 本发明涉及一种用于抑制基于等离子体的短波长辐射源中的碎屑的方法和装置,特别是用于半导体光刻的EUV源。 本发明的目的是找到一种抑制来自等离子体的颗粒流(碎屑)的新型可能性,该等离子体使碎片远离主要位于下游的光学部件,而不会从等离子体发射的期望辐射的过度衰减。 根据本发明,这个目的在于,缓冲气体被注入碎片过滤器的过滤器结构内,侧向设置用于通过辐射的开口。 过滤器结构在等离子体的方向和辐射的传播方向上产生流动阻力,使得缓冲气体的增加的气体压力相对于真空室中的压力保持限于碎屑过滤器中的限定体积层,以及 从碎屑过滤器的过滤器结构排出的缓冲气体由真空泵从真空室中抽出。

    Method and arrangement for stabilizing the average emitted radiation output of a pulsed radiation source
    2.
    发明授权
    Method and arrangement for stabilizing the average emitted radiation output of a pulsed radiation source 有权
    用于稳定脉冲辐射源的平均发射辐射输出的方法和装置

    公开(公告)号:US07974321B2

    公开(公告)日:2011-07-05

    申请号:US11949924

    申请日:2007-12-04

    IPC分类号: H01S3/10

    摘要: The invention is directed to a method and an arrangement for stabilizing the average emitted radiation output of a pulsed radiation source. It is the object of the invention to find a novel possibility for stabilizing the average emitted radiation output of a pulsed radiation source which enables a reliable regulation even when there is no sufficiently reliable manipulated variable for influencing the emitted pulse energy (Ei). According to the invention, this object is met in that the individual pulse energy (Ei) of the current radiation pulse is measured, the deviation of the current individual pulse energy (Ei) from a previously determined target value (E0) is determined, and the pulse interval (Δti+1) preceding the triggering of the next radiation pulse is controlled depending on the magnitude of the deviation between the current individual pulse energy (Ei) and the target value (E0) of the pulse energy.

    摘要翻译: 本发明涉及用于稳定脉冲辐射源的平均发射辐射输出的方法和装置。 本发明的目的是找到一种用于稳定脉冲辐射源的平均发射辐射输出的新颖可能性,即使当没有足够可靠的操纵变量来影响发射的脉冲能量(Ei)时,也能够进行可靠的调节。 根据本发明,满足目的在于测量当前辐射脉冲的单个脉冲能量(Ei)的目的,确定当前独立脉冲能量(Ei)与先前确定的目标值(E0)的偏差,以及 根据当前个体脉冲能量(Ei)与脉冲能量的目标值(E0)之间的偏差大小来控制触发下一个辐射脉冲之前的脉冲间隔(&Dgr; ti + 1)。

    Device for the generation of a gas curtain for plasma-based EUV radiation sources
    3.
    发明授权
    Device for the generation of a gas curtain for plasma-based EUV radiation sources 有权
    用于产生基于等离子体的EUV辐射源的气幕的装置

    公开(公告)号:US07750327B2

    公开(公告)日:2010-07-06

    申请号:US12120536

    申请日:2008-05-14

    IPC分类号: H04H1/04

    CPC分类号: G03F7/70916 G03F7/70908

    摘要: The invention is directed to a device for generating flows of gas for filtering the radiation emitted in plasma-based radiation sources. It is the object of the invention to find a novel possibility for generating a gas curtain in the immediate vicinity of a radiating plasma so as to permit a simple arrangement and design and a long life of the device for generating the gas curtain under extreme thermal stress. According to the invention, this object is met in that a slit nozzle is formed of a plurality of partial bodies comprising different materials to form a supersonic nozzle profile for the generation of a broad gas curtain in order to accommodate the slit nozzle to different thermal and precision-mechanical requirements in the gas inlet region and in the gas outlet region.

    摘要翻译: 本发明涉及用于产生用于过滤基于等离子体的辐射源中发射的辐射的气体流的装置。 本发明的目的是发现在靠近辐射等离子体处产生气幕的新颖可能性,以便在极端热应力下产生气幕的装置的简单布置和设计以及使用寿命长 。 根据本发明,该目的在于,狭缝喷嘴由包括不同材料的多个部分主体形成,以形成用于产生宽气帘的超音速喷嘴轮廓,以便将狭缝喷嘴适应于不同的热和 气体入口区域和气体出口区域的精密机械要求。

    METHOD AND ARRANGEMENT FOR THE SUPPRESSION OF DEBRIS IN THE GENERATION OF SHORT-WAVELENGTH RADIATION BASED ON A PLASMA
    4.
    发明申请
    METHOD AND ARRANGEMENT FOR THE SUPPRESSION OF DEBRIS IN THE GENERATION OF SHORT-WAVELENGTH RADIATION BASED ON A PLASMA 有权
    基于等离子体的短波辐射生成抑制方法与装置

    公开(公告)号:US20060243927A1

    公开(公告)日:2006-11-02

    申请号:US11380487

    申请日:2006-04-27

    IPC分类号: G01J3/10 H05G2/00

    CPC分类号: G03F7/70916 G03F7/70033

    摘要: The invention is directed to a method and arrangements for the suppression of debris in short-wavelength radiation sources based on a plasma, particularly for EUV sources for semiconductor lithography. The object of the invention is to find a novel possibility for suppressing the particle flow (debris) from a plasma which keeps the debris away from primarily optical components located downstream without excessive attenuation of the desired radiation emitted from the plasma. According to the invention, this object is met in that a buffer gas is injected inside the filter structure of the debris filter lateral to openings that are provided for passing the radiation. The filter structure generates a flow resistance in direction of the plasma and in direction of propagation of the radiation so that an increased gas pressure of buffer gas remains limited to a defined volume layer in the debris filter relative to the pressure in the vacuum chamber, and the buffer gas exiting from the filter structure of the debris filter is sucked out of the vacuum chamber by vacuum pumps.

    摘要翻译: 本发明涉及一种用于抑制基于等离子体的短波长辐射源中的碎屑的方法和装置,特别是用于半导体光刻的EUV源。 本发明的目的是找到一种抑制来自等离子体的颗粒流(碎屑)的新型可能性,该等离子体使碎片远离主要位于下游的光学部件,而不会从等离子体发射的期望辐射的过度衰减。 根据本发明,这个目的在于,缓冲气体被注入碎片过滤器的过滤器结构内,侧向设置用于通过辐射的开口。 过滤器结构在等离子体的方向和辐射的传播方向上产生流动阻力,使得缓冲气体的增加的气体压力相对于真空室中的压力保持限于碎屑过滤器中的限定体积层,以及 从碎屑过滤器的过滤器结构排出的缓冲气体由真空泵从真空室中抽出。

    Arrangement for the suppression of unwanted spectral components in a plasma-based EUV radiation source
    5.
    发明授权
    Arrangement for the suppression of unwanted spectral components in a plasma-based EUV radiation source 有权
    用于抑制基于等离子体的EUV辐射源中不需要的光谱成分的布置

    公开(公告)号:US07755070B2

    公开(公告)日:2010-07-13

    申请号:US11539342

    申请日:2006-10-06

    IPC分类号: H01L21/027 G21K3/00 G03F7/20

    摘要: The invention is directed to an arrangement for the suppression of unwanted spectral components (‘out-of-band’ radiation, as it is called) in a plasma-based radiation source. The object of the invention is to find a novel possibility for the suppression of unwanted spectral components in radiation exiting from a plasma-based EUV radiation source which permits a simple suppression of out-of-band radiation outside the desired EUV range without requiring costly manufacturing and adjustment of diffraction gratings. This object is met according to the invention in that a filter unit is provided between the plasma and an application location of the EUV radiation, which filter unit has at least one gas curtain comprising at least one rapidly flowing gas whose molecules have no absorption maxima for the desired EUV radiation and intensive absorption maxima for other, unwanted wavelengths that are emitted, at least in the IR region. For the purpose of generating the gas curtain, at least one slit nozzle and an efficient gas sink are arranged laterally opposite one another with respect to an optical axis of the beam bundle in order to limit the gas curtain in a spatially defined manner and to remove it again from the vacuum chambers as completely as possible.

    摘要翻译: 本发明涉及一种用于在基于等离子体的辐射源中抑制不想要的光谱分量(如所谓的“带外”辐射)的布置。 本发明的目的是找到一种新颖的可能性,用于抑制从基于等离子体的EUV辐射源射出的辐射中的不需要的光谱分量,其允许在期望的EUV范围之外简单地抑制带外辐射,而不需要昂贵的制造 和衍射光栅的调整。 根据本发明满足本发明的目的在于,在等离子体和EUV辐射的施加位置之间提供过滤器单元,该过滤器单元具有至少一个气幕,其包括至少一个快速流动的气体,其分子对于 至少在IR区域发射的其他不需要的波长的期望的EUV辐射和强吸收最大值。 为了产生气幕,至少有一个狭缝喷嘴和有效的气体槽相对于束束的光轴横向相对布置,以便以空间限定的方式限制气幕并且移除 再次从真空室中尽可能完全地完成。

    DEVICE FOR THE GENERATION OF A GAS CURTAIN FOR PLASMA-BASED EUV RADIATION SOURCES
    6.
    发明申请
    DEVICE FOR THE GENERATION OF A GAS CURTAIN FOR PLASMA-BASED EUV RADIATION SOURCES 有权
    用于基于等离子体的EUV辐射源生成气体玻璃的装置

    公开(公告)号:US20080283779A1

    公开(公告)日:2008-11-20

    申请号:US12120536

    申请日:2008-05-14

    IPC分类号: G02B5/00

    CPC分类号: G03F7/70916 G03F7/70908

    摘要: The invention is directed to a device for generating flows of gas for filtering the radiation emitted in plasma-based radiation sources. It is the object of the invention to find a novel possibility for generating a gas curtain in the immediate vicinity of a radiating plasma so as to permit a simple arrangement and design and a long life of the device for generating the gas curtain under extreme thermal stress. According to the invention, this object is met in that a slit nozzle is formed of a plurality of partial bodies comprising different materials to form a supersonic nozzle profile for the generation of a broad gas curtain in order to accommodate the slit nozzle to different thermal and precision-mechanical requirements in the gas inlet region and in the gas outlet region.

    摘要翻译: 本发明涉及用于产生用于过滤基于等离子体的辐射源中发射的辐射的气体流的装置。 本发明的目的是发现在靠近辐射等离子体处产生气幕的新颖可能性,以便在极端热应力下产生气幕的装置的简单布置和设计以及使用寿命长 。 根据本发明,该目的在于,狭缝喷嘴由包括不同材料的多个部分主体形成,以形成用于产生宽气帘的超音速喷嘴轮廓,以便将狭缝喷嘴适应于不同的热和 气体入口区域和气体出口区域的精密机械要求。

    METHOD AND ARRANGEMENT FOR STABILIZING THE AVERAGE EMITTED RADIATION OUTPUT OF A PULSED RADIATION SOURCE
    7.
    发明申请
    METHOD AND ARRANGEMENT FOR STABILIZING THE AVERAGE EMITTED RADIATION OUTPUT OF A PULSED RADIATION SOURCE 有权
    用于稳定脉冲辐射源的平均发射辐射输出的方法和装置

    公开(公告)号:US20080143989A1

    公开(公告)日:2008-06-19

    申请号:US11949924

    申请日:2007-12-04

    IPC分类号: G03B27/72 G01J1/18

    摘要: The invention is directed to a method and an arrangement for stabilizing the average emitted radiation output of a pulsed radiation source. It is the object of the invention to find a novel possibility for stabilizing the average emitted radiation output of a pulsed radiation source which enables a reliable regulation even when there is no sufficiently reliable manipulated variable for influencing the emitted pulse energy (Ei). According to the invention, this object is met in that the individual pulse energy (Ei) of the current radiation pulse is measured, the deviation of the current individual pulse energy (Ei) from a previously determined target value (E0) is determined, and the pulse interval (Δti+1) preceding the triggering of the next radiation pulse is controlled depending on the magnitude of the deviation between the current individual pulse energy (Ei) and the target value (E0) of the pulse energy.

    摘要翻译: 本发明涉及用于稳定脉冲辐射源的平均发射辐射输出的方法和装置。 本发明的目的是找到一种用于稳定脉冲辐射源的平均发射辐射输出的新颖可能性,即使当没有足够可靠的操纵变量来影响发射的脉冲能量时,其也可以进行可靠的调节(E i )。 根据本发明,满足目的在于测量当前辐射脉冲的单个脉冲能量(E SUB),当前个体脉冲能量的偏差(E 1 / SUB>)从先前确定的目标值(E 0)确定,并且控制下一个辐射脉冲触发之前的脉冲间隔(Deltat1 + 1 + 1) 取决于脉冲能量的当前单独脉冲能量(E SUB)与目标值(E SUB)之间的偏差的大小。

    ARRANGEMENT FOR THE SUPPRESSION OF UNWANTED SPECTRAL COMPONENTS IN A PLASMA-BASED EUV RADIATION SOURCE
    8.
    发明申请
    ARRANGEMENT FOR THE SUPPRESSION OF UNWANTED SPECTRAL COMPONENTS IN A PLASMA-BASED EUV RADIATION SOURCE 有权
    在基于等离子体的EUV辐射源中抑制无源光谱成分的布置

    公开(公告)号:US20070080307A1

    公开(公告)日:2007-04-12

    申请号:US11539342

    申请日:2006-10-06

    IPC分类号: G01J3/10

    摘要: The invention is directed to an arrangement for the suppression of unwanted spectral components (‘out-of-band’ radiation, as it is called) in a plasma-based radiation source. The object of the invention is to find a novel possibility for the suppression of unwanted spectral components in radiation exiting from a plasma-based EUV radiation source which permits a simple suppression of out-of-band radiation outside the desired EUV range without requiring costly manufacturing and adjustment of diffraction gratings. This object is met according to the invention in that a filter unit is provided between the plasma and an application location of the EUV radiation, which filter unit has at least one gas curtain comprising at least one rapidly flowing gas whose molecules have no absorption maxima for the desired EUV radiation and intensive absorption maxima for other, unwanted wavelengths that are emitted, at least in the IR region. For the purpose of generating the gas curtain, at least one slit nozzle and an efficient gas sink are arranged laterally opposite one another with respect to an optical axis of the beam bundle in order to limit the gas curtain in a spatially defined manner and to remove it again from the vacuum chambers as completely as possible.

    摘要翻译: 本发明涉及一种用于在基于等离子体的辐射源中抑制不想要的光谱分量(如所谓的“带外”辐射)的布置。 本发明的目的是找到一种新颖的可能性,用于抑制从基于等离子体的EUV辐射源射出的辐射中的不需要的光谱分量,其允许在期望的EUV范围之外简单地抑制带外辐射,而不需要昂贵的制造 和衍射光栅的调整。 根据本发明满足本发明的目的在于,在等离子体和EUV辐射的施加位置之间提供过滤器单元,该过滤器单元具有至少一个气幕,其包括至少一个快速流动的气体,其分子对于 至少在IR区域发射的其他不需要的波长的期望的EUV辐射和强吸收最大值。 为了产生气幕,至少有一个狭缝喷嘴和有效的气体槽相对于束束的光轴横向相对布置,以便以空间限定的方式限制气幕并且移除 再次从真空室中尽可能完全地完成。