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1.发明申请ARRANGEMENT FOR THE SUPPRESSION OF UNWANTED SPECTRAL COMPONENTS IN A PLASMA-BASED EUV RADIATION SOURCE 有权在基于等离子体的EUV辐射源中抑制无源光谱成分的布置公开(公告)号：US20070080307A1
公开(公告)日：2007-04-12
申请号：US11539342
申请日：2006-10-06
IPC分类号： G01J3/10
CPC分类号： G03F7/70933 , B82Y10/00 , G03F7/70033 , G03F7/70191 , G03F7/70575 , G03F7/70908 , G03F7/70916 , G03F7/70991 , G21K1/10 , H05G2/001
摘要： The invention is directed to an arrangement for the suppression of unwanted spectral components (‘out-of-band’ radiation, as it is called) in a plasma-based radiation source. The object of the invention is to find a novel possibility for the suppression of unwanted spectral components in radiation exiting from a plasma-based EUV radiation source which permits a simple suppression of out-of-band radiation outside the desired EUV range without requiring costly manufacturing and adjustment of diffraction gratings. This object is met according to the invention in that a filter unit is provided between the plasma and an application location of the EUV radiation, which filter unit has at least one gas curtain comprising at least one rapidly flowing gas whose molecules have no absorption maxima for the desired EUV radiation and intensive absorption maxima for other, unwanted wavelengths that are emitted, at least in the IR region. For the purpose of generating the gas curtain, at least one slit nozzle and an efficient gas sink are arranged laterally opposite one another with respect to an optical axis of the beam bundle in order to limit the gas curtain in a spatially defined manner and to remove it again from the vacuum chambers as completely as possible.
摘要翻译： 本发明涉及一种用于在基于等离子体的辐射源中抑制不想要的光谱分量（如所谓的“带外”辐射）的布置。 本发明的目的是找到一种新颖的可能性，用于抑制从基于等离子体的EUV辐射源射出的辐射中的不需要的光谱分量，其允许在期望的EUV范围之外简单地抑制带外辐射，而不需要昂贵的制造 和衍射光栅的调整。 根据本发明满足本发明的目的在于，在等离子体和EUV辐射的施加位置之间提供过滤器单元，该过滤器单元具有至少一个气幕，其包括至少一个快速流动的气体，其分子对于 至少在IR区域发射的其他不需要的波长的期望的EUV辐射和强吸收最大值。 为了产生气幕，至少有一个狭缝喷嘴和有效的气体槽相对于束束的光轴横向相对布置，以便以空间限定的方式限制气幕并且移除 再次从真空室中尽可能完全地完成。
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2.发明授权Arrangement for the suppression of unwanted spectral components in a plasma-based EUV radiation source 有权用于抑制基于等离子体的EUV辐射源中不需要的光谱成分的布置公开(公告)号：US07755070B2
公开(公告)日：2010-07-13
申请号：US11539342
申请日：2006-10-06
IPC分类号： H01L21/027 , G21K3/00 , G03F7/20
CPC分类号： G03F7/70933 , B82Y10/00 , G03F7/70033 , G03F7/70191 , G03F7/70575 , G03F7/70908 , G03F7/70916 , G03F7/70991 , G21K1/10 , H05G2/001
摘要： The invention is directed to an arrangement for the suppression of unwanted spectral components (‘out-of-band’ radiation, as it is called) in a plasma-based radiation source. The object of the invention is to find a novel possibility for the suppression of unwanted spectral components in radiation exiting from a plasma-based EUV radiation source which permits a simple suppression of out-of-band radiation outside the desired EUV range without requiring costly manufacturing and adjustment of diffraction gratings. This object is met according to the invention in that a filter unit is provided between the plasma and an application location of the EUV radiation, which filter unit has at least one gas curtain comprising at least one rapidly flowing gas whose molecules have no absorption maxima for the desired EUV radiation and intensive absorption maxima for other, unwanted wavelengths that are emitted, at least in the IR region. For the purpose of generating the gas curtain, at least one slit nozzle and an efficient gas sink are arranged laterally opposite one another with respect to an optical axis of the beam bundle in order to limit the gas curtain in a spatially defined manner and to remove it again from the vacuum chambers as completely as possible.
摘要翻译： 本发明涉及一种用于在基于等离子体的辐射源中抑制不想要的光谱分量（如所谓的“带外”辐射）的布置。 本发明的目的是找到一种新颖的可能性，用于抑制从基于等离子体的EUV辐射源射出的辐射中的不需要的光谱分量，其允许在期望的EUV范围之外简单地抑制带外辐射，而不需要昂贵的制造 和衍射光栅的调整。 根据本发明满足本发明的目的在于，在等离子体和EUV辐射的施加位置之间提供过滤器单元，该过滤器单元具有至少一个气幕，其包括至少一个快速流动的气体，其分子对于 至少在IR区域发射的其他不需要的波长的期望的EUV辐射和强吸收最大值。 为了产生气幕，至少有一个狭缝喷嘴和有效的气体槽相对于束束的光轴横向相对布置，以便以空间限定的方式限制气幕并且移除 再次从真空室中尽可能完全地完成。
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3.发明授权Method and arrangement for the suppression of debris in the generation of short-wavelength radiation based on a plasma 有权在基于等离子体的短波长辐射的产生中抑制碎屑的方法和装置公开(公告)号：US07365350B2
公开(公告)日：2008-04-29
申请号：US11380487
申请日：2006-04-27
IPC分类号： H04H1/04
CPC分类号： G03F7/70916 , G03F7/70033
摘要： The invention is directed to a method and arrangements for the suppression of debris in short-wavelength radiation sources based on a plasma, particularly for EUV sources for semiconductor lithography. The object of the invention is to find a novel possibility for suppressing the particle flow (debris) from a plasma which keeps the debris away from primarily optical components located downstream without excessive attenuation of the desired radiation emitted from the plasma. According to the invention, this object is met in that a buffer gas is injected inside the filter structure of the debris filter lateral to openings that are provided for passing the radiation. The filter structure generates a flow resistance in direction of the plasma and in direction of propagation of the radiation so that an increased gas pressure of buffer gas remains limited to a defined volume layer in the debris filter relative to the pressure in the vacuum chamber, and the buffer gas exiting from the filter structure of the debris filter is sucked out of the vacuum chamber by vacuum pumps.
摘要翻译： 本发明涉及一种用于抑制基于等离子体的短波长辐射源中的碎屑的方法和装置，特别是用于半导体光刻的EUV源。 本发明的目的是找到一种抑制来自等离子体的颗粒流（碎屑）的新型可能性，该等离子体使碎片远离主要位于下游的光学部件，而不会从等离子体发射的期望辐射的过度衰减。 根据本发明，这个目的在于，缓冲气体被注入碎片过滤器的过滤器结构内，侧向设置用于通过辐射的开口。 过滤器结构在等离子体的方向和辐射的传播方向上产生流动阻力，使得缓冲气体的增加的气体压力相对于真空室中的压力保持限于碎屑过滤器中的限定体积层，以及 从碎屑过滤器的过滤器结构排出的缓冲气体由真空泵从真空室中抽出。
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4.发明申请公开(公告)号：US20060243927A1
公开(公告)日：2006-11-02
申请号：US11380487
申请日：2006-04-27
CPC分类号： G03F7/70916 , G03F7/70033
摘要： The invention is directed to a method and arrangements for the suppression of debris in short-wavelength radiation sources based on a plasma, particularly for EUV sources for semiconductor lithography. The object of the invention is to find a novel possibility for suppressing the particle flow (debris) from a plasma which keeps the debris away from primarily optical components located downstream without excessive attenuation of the desired radiation emitted from the plasma. According to the invention, this object is met in that a buffer gas is injected inside the filter structure of the debris filter lateral to openings that are provided for passing the radiation. The filter structure generates a flow resistance in direction of the plasma and in direction of propagation of the radiation so that an increased gas pressure of buffer gas remains limited to a defined volume layer in the debris filter relative to the pressure in the vacuum chamber, and the buffer gas exiting from the filter structure of the debris filter is sucked out of the vacuum chamber by vacuum pumps.
摘要翻译： 本发明涉及一种用于抑制基于等离子体的短波长辐射源中的碎屑的方法和装置，特别是用于半导体光刻的EUV源。 本发明的目的是找到一种抑制来自等离子体的颗粒流（碎屑）的新型可能性，该等离子体使碎片远离主要位于下游的光学部件，而不会从等离子体发射的期望辐射的过度衰减。 根据本发明，这个目的在于，缓冲气体被注入碎片过滤器的过滤器结构内，侧向设置用于通过辐射的开口。 过滤器结构在等离子体的方向和辐射的传播方向上产生流动阻力，使得缓冲气体的增加的气体压力相对于真空室中的压力保持限于碎屑过滤器中的限定体积层，以及 从碎屑过滤器的过滤器结构排出的缓冲气体由真空泵从真空室中抽出。
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5.发明授权Method and arrangement for stabilizing the average emitted radiation output of a pulsed radiation source 有权用于稳定脉冲辐射源的平均发射辐射输出的方法和装置公开(公告)号：US07974321B2
公开(公告)日：2011-07-05
申请号：US11949924
申请日：2007-12-04
IPC分类号： H01S3/10
CPC分类号： G03B27/72 , G01J1/18 , G01J1/4257 , G01J11/00 , G03F7/70041 , G03F7/70558
摘要： The invention is directed to a method and an arrangement for stabilizing the average emitted radiation output of a pulsed radiation source. It is the object of the invention to find a novel possibility for stabilizing the average emitted radiation output of a pulsed radiation source which enables a reliable regulation even when there is no sufficiently reliable manipulated variable for influencing the emitted pulse energy (Ei). According to the invention, this object is met in that the individual pulse energy (Ei) of the current radiation pulse is measured, the deviation of the current individual pulse energy (Ei) from a previously determined target value (E0) is determined, and the pulse interval (Δti+1) preceding the triggering of the next radiation pulse is controlled depending on the magnitude of the deviation between the current individual pulse energy (Ei) and the target value (E0) of the pulse energy.
摘要翻译： 本发明涉及用于稳定脉冲辐射源的平均发射辐射输出的方法和装置。 本发明的目的是找到一种用于稳定脉冲辐射源的平均发射辐射输出的新颖可能性，即使当没有足够可靠的操纵变量来影响发射的脉冲能量（Ei）时，也能够进行可靠的调节。 根据本发明，满足目的在于测量当前辐射脉冲的单个脉冲能量（Ei）的目的，确定当前独立脉冲能量（Ei）与先前确定的目标值（E0）的偏差，以及 根据当前个体脉冲能量（Ei）与脉冲能量的目标值（E0）之间的偏差大小来控制触发下一个辐射脉冲之前的脉冲间隔（＆Dgr; ti + 1）。
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6.发明申请METHOD AND ARRANGEMENT FOR STABILIZING THE AVERAGE EMITTED RADIATION OUTPUT OF A PULSED RADIATION SOURCE 有权用于稳定脉冲辐射源的平均发射辐射输出的方法和装置公开(公告)号：US20080143989A1
公开(公告)日：2008-06-19
申请号：US11949924
申请日：2007-12-04
CPC分类号： G03B27/72 , G01J1/18 , G01J1/4257 , G01J11/00 , G03F7/70041 , G03F7/70558
摘要： The invention is directed to a method and an arrangement for stabilizing the average emitted radiation output of a pulsed radiation source. It is the object of the invention to find a novel possibility for stabilizing the average emitted radiation output of a pulsed radiation source which enables a reliable regulation even when there is no sufficiently reliable manipulated variable for influencing the emitted pulse energy (Ei). According to the invention, this object is met in that the individual pulse energy (Ei) of the current radiation pulse is measured, the deviation of the current individual pulse energy (Ei) from a previously determined target value (E0) is determined, and the pulse interval (Δti+1) preceding the triggering of the next radiation pulse is controlled depending on the magnitude of the deviation between the current individual pulse energy (Ei) and the target value (E0) of the pulse energy.
摘要翻译： 本发明涉及用于稳定脉冲辐射源的平均发射辐射输出的方法和装置。 本发明的目的是找到一种用于稳定脉冲辐射源的平均发射辐射输出的新颖可能性，即使当没有足够可靠的操纵变量来影响发射的脉冲能量时，其也可以进行可靠的调节（E i ）。 根据本发明，满足目的在于测量当前辐射脉冲的单个脉冲能量（E SUB），当前个体脉冲能量的偏差（E 1 / SUB>）从先前确定的目标值（E
0）确定，并且控制下一个辐射脉冲触发之前的脉冲间隔（Deltat1 + 1 + 1） 取决于脉冲能量的当前单独脉冲能量（E SUB）与目标值（E SUB）之间的偏差的大小。 -
7.发明授权Method and arrangement for the adjustment of characteristics of a beam bundle of high-energy radiation emitted from a plasma 有权用于调整从等离子体发射的高能辐射束束的特性的方法和装置公开(公告)号：US08410422B2
公开(公告)日：2013-04-02
申请号：US13436923
申请日：2012-03-31
申请人： Denis Bolshukhin , Alexander Christian Keller , Max Christian Schuermann , Guido Schriever , Imtiaz Ahmad , Juergen Kleinschmidt
发明人： Denis Bolshukhin , Alexander Christian Keller , Max Christian Schuermann , Guido Schriever , Imtiaz Ahmad , Juergen Kleinschmidt
CPC分类号： G03F7/70133 , G01J1/4257 , G01J1/429 , G03F7/70141 , G03F7/70166 , G03F7/7085 , H05G2/001
摘要： The invention is related to the adjustment of characteristics of a beam bundle of high-energy radiation emitted from a plasma, particularly for applications in semiconductor lithography. For acquiring and adjusting characteristics of a beam bundle of high-energy radiation emitted from a plasma and focused by means of collector optics, an intensity distribution of the radiation is acquired over the cross section of a convergent beam bundle in a measuring plane perpendicular to the optical axis in front of an intermediate focus of the collector optics, and intensity values are recorded in defined sectors for a quantity of reception regions of a measuring device which are aligned with different radii concentric to the optical axis, and measured quantities and control variables are determined from a comparison of the intensity values of different sectors for aligning the collector optics.
摘要翻译： 本发明涉及从等离子体发射的高能辐射的束束的特性的调整，特别是在半导体光刻中的应用。 为了获取和调整从等离子体发射并通过集光器光学聚焦的高能辐射束束的特性，在与垂直于等离子体的测量平面中的会聚束束的横截面上获取辐射的强度分布 光轴在收集器光学器件的中间焦点前方，并且强度值被记录在与光轴同心的不同半径对准的测量装置的接收区域的数量的限定扇区中，并且测量的量和控制变量是 由不同扇区的强度值的比较确定，用于对准收集器光学器件。
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公开(公告)号：US07595594B2
公开(公告)日：2009-09-29
申请号：US12041121
申请日：2008-03-03
IPC分类号： H05B31/26
摘要： The present invention is directed to an arrangement for switching high electric currents by way of a gas discharge at high voltages or for generating gas discharge plasma emitting EUV radiation. It is the object of the invention to find a novel possibility for generating a hollow cathode plasma that permits a longer life of the cathodes of short wavelength-emitting gas discharge radiation sources and pseudospark switches, also in high-power operation. This object is met in that the metal wall between the hollow cathode space and the discharge space has a thickness on the order of the centimeter range so that the openings of the metal wall change into relatively long channels and in that substantially radially extending cooling channels are introduced in the metal wall to reduce the ion erosion of the metal wall of the hollow cathode through efficient cooling.
摘要翻译： 本发明涉及一种用于通过高压气体放电或用于产生气体放电等离子体发射EUV辐射来切换高电流的装置。 本发明的目的是发现一种产生中空阴极等离子体的新颖可能性，其允许短波长发射气体放电辐射源和伪脉冲开关的阴极在大功率操作中寿命更长。 满足这个目的在于，中空阴极空间和放电空间之间的金属壁具有大约厘米范围的厚度，使得金属壁的开口变成相对较长的通道，并且基本上径向延伸的冷却通道是 引入金属壁，以通过有效的冷却来减少空心阴极的金属壁的离子侵蚀。
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9.发明授权公开(公告)号：US07531820B2
公开(公告)日：2009-05-12
申请号：US11426086
申请日：2006-06-23
IPC分类号： H05G2/00
摘要： The object of an arrangement and a method for the generation of extreme ultraviolet radiation is to construct the radiation source with an increased lifetime of the electrodes for using various emitters, wherein deposits inside the discharge chamber are reduced considerably when using metal emitters. The starting material is supplied as a continuous series of individual volumes which are introduced successively by directed injection and are pre-ionized by a pulsed energy beam. At least the electrode that is thermally loaded to a comparatively greater degree is constructed as a rotating electrode.
摘要翻译： 用于产生极紫外线辐射的装置和方法的目的是构建具有增加的电极使用寿命的辐射源，以使用各种发射器，其中当使用金属发射体时，放电室内的沉积物显着减少。 起始材料作为连续系列的单独体积供应，其通过定向注射连续引入并且通过脉冲能量束预电离。 至少将热负载到较大程度的电极构成为旋转电极。
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10.发明申请公开(公告)号：US20060192157A1
公开(公告)日：2006-08-31
申请号：US11354324
申请日：2006-02-14
申请人： Kai Gaebel , Juergen Kleinschmidt
发明人： Kai Gaebel , Juergen Kleinschmidt
IPC分类号： G01J3/10
摘要： It is the object of a device and method for generating extreme ultraviolet (EUV) radiation to overcome the obstacles formerly posed by the use of efficient metal emitters so that the conversion efficiency can be optimized and, as a result, the radiation output can be increased without shortening the useful life of the collector optics and electrode system. An injection nozzle of an injection device is directed to a discharge area located in a discharge chamber. The injection nozzle supplies a series of individual volumes of a starting material serving to generate radiation at a repetition rate that corresponds to the frequency of the gas discharge. Further, provision is made for successively vaporizing the individual volumes in the discharge area.
摘要翻译： 产生极紫外（EUV）辐射的装置和方法的目的是克服先前使用有效的金属发射体造成的障碍，从而可以优化转换效率，结果可以增加辐射输出 而不会缩短集光器和电极系统的使用寿命。 注射装置的注射喷嘴被引导到位于排放室中的排放区域。 注射喷嘴提供一系列单独的体积的起始材料，其用于以对应于气体放电的频率的重复率产生辐射。 此外，提供了在排出区域中连续蒸发各个体积。
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